TRANSISTOR 9A 40W Search Results

BUZ72A

Abstract: TA17401 TB334
Contextual Info: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: BUZ72A Semiconductor Data Sheet June 1999 9A, 100 V, 0.250 Ohm, N-Channel Power MOSFET File Number 2262.2 Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ72A

Abstract: TA17401 TB334
Contextual Info: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

transistor buz 36

Abstract: C67078-S1313-A3
Contextual Info: BUZ 72A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 A 100 V 9A 0.25 Ω TO-220 AB C67078-S1313-A3 Maximum Ratings Parameter Symbol Continuous drain current

transistor buz 36

Abstract: C67078-S1327-A3
Contextual Info: BUZ 72AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G D Pin 3 S Type VDS ID RDS on Package Ordering Code BUZ 72 AL 100 V 9A 0.25 Ω TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol

C67078-S1327-A3

Contextual Info: BUZ 72 AL SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 AL 100 V 9A 0.25 Ω TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol

C67078-S1313-A3

Abstract: BUZ72A
Contextual Info: BUZ 72 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 72 A 100 V 9A 0.25 Ω TO-220 AB C67078-S1313-A3 Maximum Ratings Parameter Symbol Continuous drain current

BU272A

Abstract: BUZ72A
Contextual Info: interrii BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET PART NUMBER BU272A PACKAGE TO-220AB BRAND BUZ72A NOTE: When ordering, use the entire part number. 2262.2 Features • 9A, 100 V This is an N-Channel enhancement mode silicon gate power

NTE2301

Contextual Info: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction

BUZ72A

Abstract: mosfet .5a 100v
Contextual Info: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features

BUZ71

Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Contextual Info: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

transistor buz71a

Abstract: BUZ71A TB334
Contextual Info: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

BUZ71 application

Abstract: BUZ71 TB334
Contextual Info: BUZ71 Data Sheet June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

VF175-88

Abstract: RF GAIN LTD VF175 mosfet vhf power amplifier H101X all mosfet vhf power amplifier 175 w low-vhf amplifier
Contextual Info: VF175-88 175 W Low-VHF Amplifier Designed for VHF TV broadcast transmitters, this amplifier incorporates microstrip technology and MOSFET transistor to enhance ruggedness and reliability • • • • • • 54 - 88 MHz 48 Volts Input/Output 50 Ω Pout : 175 W min

Contextual Info: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as

BUZ71A

Abstract: TB334
Contextual Info: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

BUZ71 application

Contextual Info: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features

IRGPC50F

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

IRGPC50F

Contextual Info: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V

IRGPC50F

Contextual Info: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V

IRGPC50F

Abstract: pec 632 C9010
Contextual Info: PD - 9.695A IRGPC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.7V

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440