TRANSISTOR D 322 Search Results

TRANSISTOR D 322 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR D 322 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EM- 546 motor Abstract: 2N6545 2N6545 Motorola 2N6544 Contextual Info: MOTOROLA SC XSTRS/R F 12E D \| b3b72S4 QQflMbbt Ö \| T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,	OCR Scan	b3b72S4 2N6545 EM- 546 motor 2N6545 Motorola 2N6544	PDF
transistor NEC D 822 P Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters	OCR Scan	2SC4226 2SC4226 SC-70 2SC4226-T1 2SC4226-T2 transistor NEC D 822 P transistor number D 2498 702 mini transistor NEC D 822 P	PDF
1BW TRANSISTOR Abstract: R1200 R1300 200R12KF Contextual Info: “R 5 f - 3 f F 200 R 12 KF 55E EUPEC D 3 4 D 3 S CJ7 D0 002i »b Thermische Eigenschaften Transistor Transistor • Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 200 A HUPEC Thermal properties Rthjc DC, pro Baustein/per module	OCR Scan	D00024b 34D32CI7 1BW TRANSISTOR R1200 R1300 200R12KF	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
BF939 Abstract: 60S2 N322 transistor BF939 n3220 Contextual Info: 1 BF939. N AUER PHILIPS/DISCRETE ObE D fab53131 001E354 T T - 5 i - 17 i SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled pream plifier in v.h.f. tuners. Q U IC K REFERENCE D A T A -V c B O max.	OCR Scan	BF939. 001E354 BF939 60S2 N322 transistor BF939 n3220	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
TRANSISTOR GB 558 Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558	PDF
Contextual Info: N AMER PHILIPS/DISCRETE ObE D b b s a ^ i O D 1S171 a - - DEVELOPMENT DATA 11 This data sheet contains advance information and specifications are subject to change without notice. RX1011B350Y T ? 3 3 ' I G - PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C	OCR Scan	1S171 RX1011B350Y	PDF
BUK454-500B Abstract: 1S93 DM 321 diode 1S93 Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110flSb DObHObl Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	711DflSh BUK454-500B -T0220AB BUK454-500B 1S93 DM 321 diode 1S93	PDF
Contextual Info: it_ N AUER PHILIPS/DISCRETE QbE D BF939 bb53T31 0012324 T • . ~ — - —— ' T - 2J - I 7 SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled preamplifier in v.h.f.	OCR Scan	BF939 bb53T31 bbS3131 001232b bbS3T31 7Z82204	PDF
philips tv smps Abstract: BUK454-500B T0220AB Contextual Info: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	0030b25 BUK454-500B T0220AB BUK454-500B philips tv smps	PDF
BUK456-1000A Abstract: BUK456 BUK456-1000B T0220AB Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^ 5 3 ^ 3 1 00 2 0 5 4 0 0 ■ PowerMOS transistor BUK456-1000A BUK456-1000B r - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK456-1000A BUK456-1000B BUK456 -1000A -1000B T0220AB	PDF
lte in philips Abstract: BUK454-500B T0220AB Contextual Info: N AMER P H I L I P S / D I S C R E T E fc»TE D • 0 0 3 0 b2 5 b6 S H A P X fcifc.Sa'm Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	0D3Db25 BUK454-500B T0220AB lte in philips BUK454-500B T0220AB	PDF

BUK456 Abstract: BUK456-1OOOA BUK456-1000A BUK456-1000B T0220AB Contextual Info: N AMER PHILIPS/DISCRETE BSE D • ^53^31 0020540 PowerMOS transistor ■ BUK456-1000A BUK456-1000B r - GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK456-1000A BUK456-1000B BUK456 -1000A -1000B BUK456-1OOOA BUK456-1000A BUK456-1000B T0220AB	PDF
613 GB 123 CT Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S	OCR Scan	uPA812T 2SC4227) /xPA812T 613 GB 123 CT	PDF
transistor vergleichsliste Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N	OCR Scan		PDF
RX1011B350Y Abstract: broad-band Microwave Class-C Transistor Amplifiers Contextual Info: N AMER P H I L I P S / D I S C R E T E bbSB^l ObE D 0 0 1 5 1 7 ^ fi D EVELOPM EN T DATA RX1011B350Y T h is data sheet contains advance inform ation and specifications are subject to change w ith out notice. r-f 33-/S" PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C	OCR Scan	RX1011B350Y T-33- 7Z23071 RX1011B350Y broad-band Microwave Class-C Transistor Amplifiers	PDF
TRANSISTOR BI 243 Contextual Info: bSE D PHILIPS INTERNATIONAL • PHIN 711üflEb DQbSabB 534 BLV31 V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers for television transmitters and transposers. Diffused em itter ballasting resistors and the application of	OCR Scan	BLV31 711002b 00b2671 TRANSISTOR BI 243	PDF
philips rf choke ferrite Contextual Info: N AUER PHILIPS/DISCRETE bbsa^ai 0026766 07T * A P X BLT93/SL b'lE D A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.	OCR Scan	BLT93/SL OT122D) 7Z24076 7Z24078 philips rf choke ferrite	PDF
Contextual Info: b'lE D • N AUER PHILIPS/DISCRETE hh53*131 DQSflTS? 2bfi APX BLV30 ; v V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for television transmitters and transposers. Diffused emitter ballasting resistors and the application of gold sandwich	OCR Scan	BLV30	PDF
ferrite 4312 Abstract: SL 100 NPN Transistor Contextual Info: PHILIPS INTERNATIONAL bSE D 711002b QDbEböS 333 I IPHIN BLT93/SL • A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.	OCR Scan	711002b BLT93/SL OT122D) 7Z24076 7Z24077 7Z24078 ferrite 4312 SL 100 NPN Transistor	PDF
BLV30 Abstract: DB2-24 sot122 Contextual Info: PHILIPS INTERNATIONAL m bSE D 711005b OOt.2054 521 BLV30 IPHIN _ _ _ _ _ _ _A_ _ _ _ _ _ V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. am plifiers fo r television transmitters and transposers. Diffused em itter ballasting resistors and the application o f gold sandwich	OCR Scan	BLV30 BLV30 DB2-24 sot122	PDF
Contextual Info: LA NS DA LE SEMICONDUCTOR 35E D • SBfiflDB 0 0 0 0 3 5 ^ 2 ■ LTE MAXIMUM RATINGS T -4 3 -0 1 Rating Supply Operating Voltage Range - Vco TTL III MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor	OCR Scan	14-LEAD 16-LEAD 10-LEAD 24-LEAD	PDF

TRANSISTOR D 322 Search Results

TRANSISTOR D 322 Result Highlights (5)

TRANSISTOR D 322 Datasheets Context Search

EM- 546 motor

transistor NEC D 822 P

1BW TRANSISTOR

tip122 tip127 audio amp schematic

2N2222A 338

BF939

y51 h 120c

TRANSISTOR GB 558

BUK454-500B

philips tv smps

BUK456-1000A

lte in philips

BUK456

613 GB 123 CT

transistor vergleichsliste

RX1011B350Y

TRANSISTOR BI 243

philips rf choke ferrite

ferrite 4312

BLV30