V2108 Search Results

v2308

Abstract: EP1014 V2205
Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .

FMMV105G

Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

V2101

Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Contextual Info: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical

V2103

Abstract: V2109 V2105
Contextual Info: PLESSEY SEP1IC0ND/DISCRETE ~ 03 ÔF§7BB 0S3 3 OOObSTT 4 T -o 7 ~ t? Silicon variable capacitance F M M V 2 1 0 1 -F M M V 2 1 0 9 A B S O L U T E M A X IM U M R A T IN G S Value Unit Parameter Sym bol Reverse voltage Vr 30 V Forward current If 20 mA C H A R A C T E R IS T IC S at Tamb = 25°C .

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

ZC2800E

Abstract: BAS70-05 BAS70-06 ZC2810E ZC2811E ZC5800E ZC830A ZC831A ZC832A ZC833A
Contextual Info: SOT-23 TRANSISTORS & DIODES SCH O TTKY BARRIER DIO DES Type V br at Ir -1 0 j A min. (Volts VF at lF-1mA max. (mV) 70 20 15 50 410 410 410 410 ZC2800E ‘ ZC2810E ZC2811E ZC5800E max. nA at VR (volts) 200 100 100 200 lF at VF-1V min. (mA) CratvR-0V f—1MHz

Contextual Info: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L V2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

v2308

Abstract: V23083 v2303 V2307 sq201 MV2201 EP1014 V2306 V2107 V2209
Contextual Info: TA B L E OF C O N TE N TS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance S LIG H T HYPERABRUPT Page No. ABRUPT H A 1 9 1 5 A - H A 1 9 5 0 A , B, C 1N951 - 1 N 9 5 6 . 1N 4786- 1N 4815A , B . . . 1N 5 1 3 9 - 1 N 5 1 4 8 5 A , B . .

MMBV2107LT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

MV2201

Abstract: V2103 V2209
Contextual Info: K n o x S e m ic o n d u c t o r , I n c GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV22I5 TYPE N U M BER CA PACITANCE @ - 4 Vdc 1 M H z pF M IN QUALITY FACTOR Q @ - 4 Vdc f = 50 M H z CA PA C ITA N C E RATIO C*2V / C-30V MIN MV2101

MV2107

Abstract: mbv2109 MV2113
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PACKAGE for high volum e require­ ments of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.