X I TRANSISTOR 6 PIN Search Results

Contextual Info: Photo Transistor General Purpose 6 Pin DIP * • JL u f ita m Mm % Im a m L h I " a m » 1 çMWMi V te k lW V««N i w, n Mtn<Vj Hax{flA) MfnfO 4N25 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X p p p p p p p p 20 4N26 0.5 (I f = 50 mA)

BE555MN

Contextual Info: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :

2N5943 equivalent

Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
Contextual Info: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low

TIC125

Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
Contextual Info: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0

IC 2561 D 431

Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Contextual Info: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures

LB1272

Abstract: diode 7836 783B 3003a power transistor VJN-35V
Contextual Info: Ordering number: EN 7838 SA\YO LB 1272 N0.783B M o n o lith ic D ig it a l IC i 6-Unit, Darlington Transistor Array X The circuit configuration of this IC is a 6-unit Darlington transistor array cons^tfihg oy|?N Y ^ ^ s t o r s ^ ^ is ideally suited for use in printer hammer driving, lamp or relay driving ap p licatid ^

Contextual Info: I Ordering number : EN ¡K4916 ¡ CMOS LSI LC35256A, AS, AM-70/85/10 256K 32768 words x 8 bits^SRAM with OE and CE Control Pins Preliminary Overview The LC35256A, AS, and AM aie 32768 words x 8-bils asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CM OS memory c e ll, low

motorola power transistor to-126

Abstract: B0433 B0435 BD435 BD437 BD435i B0437 motorola 80439 BD433 BD439
Contextual Info: MOTOROLA SC -CXSTRS/R F3- 6 3 6 7 2 54 MOTOROLA- SC DE J b 3 t i 7 B S l4 00005=13 T 96 D X S T R S i R _F D 80593 -r~ BD433, BD435 BD437, BD439 BD441 MOTOROLA m SEMICONDUCTOR TECHNICAL DATA 4 AMPERE POWER TRANSISTOR NPN SILICON PLASTIC M EDIUM POWER SILICON

Contextual Info: Ordering num ber : E N 4916A CMOS LSI LC35256A, AS, AM, AT-70/85/10 No. 4 916A 256K 32768 words x 8 bits SRAM with OE and CE Control Pins I Overview The LC35256A, AS, AM, and AT are 32768 words x 8-bits asynchronous silicon gate CMOS SRAMs. These products feature a 6-transistor full-CMOS memory cell,

BF 234 transistor

Abstract: BC 194 TRANSISTORS transistor bf 196 Electronic car ignition circuit BF 194 npn transistor DIN I diode marking code BUX BF 194 transistor BUX37 transistor marking code 41 BF
Contextual Info: 17E T> m TELEFUNKEN ELECTRONIC ÔRSOÜSfc. 000*1577 1 • ALG6 . B U X 37 TnMLUFSBMCSdiii] electronic C fe â h v i 1 ie h n o lo 6 * s Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application

Contextual Info: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c

Contextual Info: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c

MT3S06S

Abstract: MT3S06T MT3S07S MT3S07T MT6L59T
Contextual Info: TO SH IBA MT6L59T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 1.25 ± 0.1 y m i M T c n n c x / ir c c

ISP817

Contextual Info: Photo Transistor Low Input Current Phototransistor Oy B n u o t* Fornirti M wSer VM m >i BVc k ic s lm A í&MtMttfdASP k |§ VCEsWV C wicnt N n * IS204-1 IS204-2 U if Min (V) » « < *) Wn(V) Mu(nA) / 50 6 Pm DIP Base Connected X 11/1 50/ X IS204-3 70/100

Contextual Info: SiG E C P L E S S E Y SE M I CO N D U CT O RS DS3579-2.3 MA5101 RADIATION HARD 256 X 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3jam technology. The design uses a 6 transistor cell and has full static operation with

2N6654

Abstract: 2N66S5 P6302 2N6655 2n6653 XGSR15040-I
Contextual Info: ^ % ^ General Semiconductor . Industries, Inc. 15 A m p N P N 300. 350. 40 0 V 2 N 6 6 5 3 , 54, 55 XG S R 1 5030. 35. 40 X G S R 1 5 0 3 0 - I . 35-I. 40-I C 2R H IG H S P E E D /H IG H POW ER S W IT C H IN G T R A N S IS T O R S The XGSR series is an NPN double diffused epitaxial transistor designed for high speed switching

Contextual Info: ROHM CO LTD MQE D • 7 flaflTtt Q Q G 3 SSfl H B R H M JJlffl IC/Standard ICs BA6722 BA6722 N T > v X £ X < "J ^ K 7 / V Transistor Switch Driver / Series Regulator B A 6 7 2 2 1 Í, • W fé 'tfjílS I/ D im e n sio n s Unit : mm I C T 't o 2 O C ) 5V L/* a U- $ t W t t t t P N P h 7 > V X :

Contextual Info: S i GEC P L E S S E Y SE MI CO N D U C T O R S DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3|im technology. The design uses a 6 transistor cell and has full static operation with

HN3C14FU

Contextual Info: TOSHIBA HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 • ± 0.1 Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA HN3C11F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3r 11F • ■ 'm ■ m tr ■ ■ ■ V H F - U H F B A N D LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)

HN3C14FU

Contextual Info: T O S H IB A HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)

Contextual Info: Alternator Voltage Regulator Darlington Driver D escription Features T h e C S - 3 3 4 1 / 3 3 5 1 / 3 8 6 / 3 8 7 i n te g r a l p r o v i d e d to d r i v e a n e x t e r n a l d a r - altern ator re g u lato r integrated cir­ lington transistor ca p a b le of s w itc h ­

Contextual Info: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with

2SD1189F

Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1