024 DIODE Search Results

Contextual Info: IRSM505-024 IRSM515-024 Series 2.3Ω, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM505-024 and IRSM515-024 are 3-phase Integrated Power Modules IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of

Contextual Info: IRLR020/024 IRLU020/024 N-CHANNEL LOGIC LEVEL MOSFET FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

G-1033

Contextual Info: G1033-024, 1310 nm GPON DFB Laser Chip DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s G1033-024, 1310 nm GPON DFB laser diode chip is designed to provide the source laser for uncooled PON applications for triple-play for voice, video and data applications. It is designed to perform the O/E and E/O

Contextual Info: SIEMENS SFH317 DAYLIGHT FILTER SFH317F SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm Surface not flat ¿039(1.0) .020 (.5) .028 (.7) .024(6) 024 ( ^ .016 (.4) n - • o iy ) .100(2 54) Collector .100(254) Emitter 1 " r L071(1J) '.047(1.2) 151 (385)

OD-24X24-C

Contextual Info: HIGH-POWER GaAlAs EMITTER CHIPS OD-24X24-C FEATURES .024 • High current capability .005 • 2 bond pads for uniform output .006 D 2 PLACES • Gold contacts for high reliability bonding .024 • High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless

Contextual Info: HIGH-POWER GaAlAs EMITTER CHIPS OD-24X24-C FEATURES .024 • High current capability .005 • 2 bond pads for uniform output • Gold contacts for high reliability bonding .006 D 2 PLACES .024 • High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless

sfh484

Contextual Info: LD274 SIEMENS GaAs Infrared Emitter Dimensions in inches mm Surface not flat .024(0.6) .016(0.4) J_ .100(2.54) 1-.071 (1.8) .047(1.2)" .224 (5.7) .200 (5.1) .031(0 , .016(0.4! T .232(5.9) .217(5.5)' i .200(5.1) .189(4.8) -4 LI f Cathode .024(0.6) .016(0.4)'

Contextual Info: HIGH-POWER GaAlAs EMITTER CHIPS OD-24x24-C FEATURES .024 • High current capability .005 • 2 bond pads for uniform output .006 D 2 PLACES • Gold contacts for high reliability bonding .024 • High reliability LPE GaAlAs IRLED chips All dimensions are nominal values in inches unless

siemens SFH nm

Abstract: A950
Contextual Info: SIEMENS SFH 205 SFH 205Q2 SFH 206 SILICON PIN PHOTODIODE DAYLIGHT FILTER Package Dimensions in Inches mm 1.336 (34) 1.258 (32) .100 (2.54) .024 (.6) •016(4) .161 (4.11 .145 ( 3 . r .031 (.8) .016 (.4) S>7\ (1.8) .047(1.2) .024 (.6) (254) .016 (.< .200 (5.1)J

Contextual Info: SFH 409 SIEMENS INFRARED EMITTER Package Dimensions in Inches mm 204 (5 2) 024 ( 6) 0 1 6 (4 ) 1S7 (4 0) 141 (3 6) 028 ( 7) 0 1 6 (4 ) *122(3 1) 100 (2 54) 114(2 9) 024(6)11 071 (1 6) 047(1 2) 0 1 6 (4 )^ ^ ^ 1 140(29) 1.061 (27) FEATURES M a x im u m R atings

Contextual Info: Formosa MS MELF Zener Diodes DL4728A THRU DL4764A Surface mount Zener type DL-41 Features 1Watt Power Dissipation High Voltages from 3.3 ~ 100V .205 5.2 .190(4.8) Designed for mounting on small surface Extremely thin/leadless package SOLDERABLE ENDS .024(.60)

1N4150-1

Contextual Info: 1N4150-1 Switching Diode ESA QUALIFIED FEATURES • • • • Qualified to ESA/SCC 5101/024 Metallurgical Bond DO-35 Package Hermetically Sealed Glass Package 1.53/ 2.28 12.7min MAXIMUM RATINGS -65oC to +175oC -65oC to +175oC 4.0A 0.5A 25oC/W max. See Note 4

DL5817-DL5819

Abstract: 5819 DIODE SM5817 SM5819 5817 melf diode IN 5817
Contextual Info: DL5817-DL5819 Silicon epitaxial planer type Features MELF/LL-41 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. .205 5.2 .190(4.8) .024(.60)

11EQS02L

Contextual Info: SCHOTTKY BARRIER DIODE 11EQS02L 1.1A/20V FEATURES ° Miniature Size 2.7 .106 DIA MAX ° Extremely Low Forward Voltage Drop ? Low Power Loss, High Efficiency 0.60(.024)nTA 0.54C021) ° High Svirge Capability 27(1.06) MIN o 20 Volts thru 100 Volts Types Available

Contextual Info: SCHOTTKY BARRIER DIODE 11EQS05 11EQS06 1.1A/50~60V FEATURES • Miniature Size MAX 'DIA 2.7 .106 , < ± ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60(.024) d ia 0.54C021) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available

DLF105

Abstract: DLF101 DLF101-DLF106 DLF102 DLF103 DLF104 DLF106
Contextual Info: DLF101-DLF106 Fast recovery type Features MELF/LL41 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. .205 5.2 .190(4.8) SOLDERABLE ENDS .024(.60)

Contextual Info: SCHOTTKY BARRIER DIODE 11EQS03 11EQS04 1.1A/30~40V FEATURES 2.7 .106 1'DIA » Miniature Size MAX • Low Forward Voltage Drop «Low Power Loss, High Efficiency 0.60(.024) DIA 0.54(.Q21) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available .27(1.06)

Contextual Info: N AMER PHILIPS/DISCRETE bSE » bbS3^31 QD2b4fi2 024 BY505 IAPX HIGH-VOLTAGE SOFT-RECOVERY RECTIFIER DIODE Glass-passivated rectifier diode in hermetically sealed axial-leaded glass envelope. It is intended as general purpose rectifier for high frequencies and features non-snap-off soft recovery switching

kz4 diode

Abstract: ky4 diode ky6 diode diode ky5 diode kz4 y8 zener marking kz5 sot-23 diode ky6 zener marking kz3 sot-23 Y5 kz4 kz2 diode
Contextual Info: BZX84Cxxx SERIES .120 3.04 .106(2.70) 350mW Zener Surface Mount Diode .103(2.60) .086(2.10) .063(1.6) .047(1.2) .024(.60) .015(.45) .080(2.04) .070(1.78) .008(.20) .003(.08) .006(.13)MIN. .055(1.40) .035(0.89) .020(.50) .013(.30) .005 (0.18) MAX PRIMARY CHARACTERISTICS

11ES2

Contextual Info: SILICON RECTIFIER DIODE ÌA/IOO— 800V JJIII 11ES4 FEATURES ‘2.7 .106 dia . M A X U1A ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0.6CH.024)nrA 0.54<.0211 ° High Surge Capability .27(1.06) MIN ° 26mm and 52mm Inside Tape Spacing

11EFS3

Abstract: 11EFS4
Contextual Info: 1.1A/300— 400V/trr : 30nsec FAST RECOVERY DIODE 11EFS3 11EFS4 FEATURES 2.7 .106 DIA MAX 0 Miniature Size ° Ultra - Fast Recovery 0.60(.024)d ia 0 .54(.021) ° Low Forward Voltage Drop . 27 ( 1.06) MIN o Low Power Loss, High Efficiency ° High Surge Capability

esaki Diode

Abstract: detail of half adder ic TUNNEL DIODE SCHINDLER GaAs tunnel diode MT-021 tunnel diode GaAs AD9235 AM687 MC1650
Contextual Info: MT-024 TUTORIAL ADC Architectures V: Pipelined Subranging ADCs by Walt Kester INTRODUCTION The pipelined subranging ADC architecture dominates today's applications where sampling rates of greater than 5 MSPS to 10 MSPS are required. Although the flash all-parallel architecture

SFH415 applications

Contextual Info: SFH 415 SFH 416 SIEMENS GaAs Infrared Emitter Dimensions in inches mm C t»p Position .217(5.5) .024(0.6) .016(0.4) .100(2.54) sp a ri a^ng T (1.ÔL, (12p .071(14 .047 T A. Cathode (Diode) ' Collector (Transistor) Approx. weight 0.4g CoHector SFH416 FEATURES

Contextual Info: SCHOTTKY BARRIER DIODE 11EQS09 11EQS10 1.1A/90— 100V FEATURES '2.71.106 DIA MAX » Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60 .024) rjr a 0.541.021) ° High Surge Capability 27(1.061 M IN ° 20 Volts thru 100 Volts Types Available