13FL7 Search Results

MPSA92

Contextual Info: G E SOLI» STATE GÏ 3875081 G E SOLID STATE DE 13fl75Gfll ODlVTflö 3 01E ~T~ 17988 2 - ? “ 2- / Signal Transistors .— .- MPS-A42, A43, MPS-A92, A93 Complimentary High Voltage Silicon

U308-U310

Abstract: U310
Contextual Info: IG E SOLI» STATE Dl DE 13fl75Qfll DD110SÖ 5 | 01E 11058 D U308-U310 N-Channel JFET High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • H ig h P o w e r G ain Ta = 25°C unless otherwise noted Gate-Drain or Gate-Source V o lt a g e . - 2 5 V

j307

Abstract: lD-10mA IT1700
Contextual Info: Gl G E SOLID STATE DE 13fl7SGfil GOllGBT 1 | P-Channel Enhancement Mode MOSFET General Purpose Amplifier IT1700 IT1700 T -s^ -sn FEATURES ABSOLUTE MAXIMUM RATINGS • Low ON-Resistance 0 a = 25°C unless otherwise noted Drain-Source and Gate-Source Voltage . -4 0 V

2N3904

Abstract: 2n3906 for 2N3904 2N3906 JEDEC 2n3906 rca 2N3903 2N3906-O 2N3904 230 2N3905 2N3S04
Contextual Info: G E SOLID STATE D1 3875081 G E SOLID STATE DE 13fl7SDfil □□17124 .0 01E Signal - 2N3903, 2N3904, 2N3905, 2N3906 17924 D *r-3 7-/r _ * r ~ 3 S V / Silicon Transistors TO-92 The GE/RCA 2N3903, 2N3904 NPN types and 2N3905,

1763S

Abstract: RFM4N35 RFM4N40 RFP4N35 RFP4N40
Contextual Info: □ 1. DE 13fl7SDfll 00 10125 7 38/5081 G É SOLID STATE Standard Power MOSFETs 0 1E 18125 _ RFM4N35, RFM4N40, RFP4N35, RFP4N40 D File Number 1491 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM

Contextual Info: -7 A I L PN P ^SER IES TAv+'s*} 7 - IW K T f s ilS O utline Dimensions Case : E-pack 2.55 —02 0 .5 ± 0 1 j m n i 4 .8 + 0 .2 F I I l. i ^ Base Collector Emitter Unit * mm A bsolute Maximum R atings s m m n & S to ra g e Tem perature Ju n c tio n Tem perature

C2688

Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
Contextual Info: Öl E SOLI» STATE 387 508 1 G E SOLID STATE General-Purpose Power Transistors ' DE | 3fl750öl □□173Tb □ X " 01E 17396 " D T ' ?S '- f f " T ' 2 T * ' 1 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786

GES5815

Abstract: GES5818 17975 GES5316 GES5616 GES5814 GES5816 GES5817 GES5819
Contextual Info: G □1 E SOLID STATE DE I 3fl7SDfll 0D17T74 3 01E 17974 3875081 G E SOLID STATE D T - ¿ > 7 -2-/ Signal Transistors_ GES5814, GES5815, GES5816 GES5817, GES5818, GES5819 Silicon Transistors Features: • Excellent gain linearity over wide range of collector current: ¿ 5 0 0 mA

diode 6t6

Abstract: H24B1 H24B2
Contextual Info: G E SOLID STATE o u r «/vw « -wi — -— 01 - — DE|3fi?SDfil D D n a i D S | Optoelectronic Specifications. T - q \ ' Z $ Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H24B series consists o f a gallium arsenide

am sw fm radio printed circuit board

Abstract: an7222 AN7224 matsua 455KHz ceramic filter am "RF Amplifier" panasonic FM tuner toko fm detector coil CFM2-455B fm radio printed circuit board AM-FM TUNER
Contextual Info: AN7224 AN7224 AM Tuner, FM-AM IF Amplifier Circuit for Radio Cassette Recorders Unit : mm • Description T he A N 7224 is a m onolithic integrated circuit designed for h ig h p e rfo rm a n c e , m u lti-fu n c tio n F M -A M IF sy stem . ■ Features •

Silicon unilateral switch

Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
Contextual Info: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers

2N6761

Abstract: 2N6762 2N6767 2nc762
Contextual Info: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi

2N3392 equivalent

Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A
Contextual Info: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated

MCT210

Contextual Info: fs E SOLID STATE 01 DE | 3ñ7S0 ñl_0 Dnfi7t 2 Optoelectronic Specifications. T -m -Z3 Photon Coupled Isolator MCT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor M IN A 8 C P E F G H J K M N P R S TOCovered under U .L . component recognition program,

3N188

Abstract: 3N190 3N189 3N191
Contextual Info: □1 SOLID S T A T E DEJ3Ö750Ö1 0 0 1 1 D E 3 fl ^ 7 T - - 2 .7 3N188-3N191 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Input impedance • High Gate Breakdown 3N190-3N191 • Zener Protected Gate 3N188-3N189

GES2222

Contextual Info: Ql SOLID STATE Ö F |3fl7S 0fil 3875081 G E SOLID STATE □ 0 1 7 clt.a 7 01E 17962 D 3^1 Signal Transistors 1 GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Performance comparable to hermetic units * High Gain ■ Low VCE SAT ■ High Frequency

RCA Television Schematic Diagram

Abstract: tv schematic diagram SHARP transistor P7d tv schematic diagram SHARP catv transistor 2sc 973 tv schematic diagram SHARP power supply si7585 schematic diagram color tv sharp 14" BALLANTINE schematic diagram tv sharp horizontal deflection
Contextual Info: G E SOLID STATE Dl r DE 1 3075001 DOIMTIE 0 TV/CATV Circuits CA3070, CA3071, CA3072_ 01É 14912 3875081 G E SO LID STATE T 7 7 -0 7 -D ? Television Chroma System Features: CA3071 CA3070 • Voltage Controlled Oscillator ■ ACC Controlled Chroma Am plifier

1RFF111

Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
Contextual Info: G E SOLID STATE Dl DE D Ë | 3 ô 7 S 0 a i 001flE4ci 3 3875081 G E SOLID STATE 01E 18249 Standard Power M O S F E T s_ IRFF110, IRFF111, IRFF112, IRFF113 T~- $ i ~ ° i D File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

RFL1N20L

Abstract: RFP2N20L RFL1N18L RFP2N18L
Contextual Info: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET

Contextual Info: INTEGRATED D E V I C E . Integrated Device Technology» Inc. b&E D 4Û 25771 GG lBf ih T S T T • I D T BUS-MATCHING BIDIRECTIONAL FIFO 512 x 1 8 -B IT -1024 x 9-BIT 1024 x 18-BIT - 2048 x 9-BIT IDT72510 IDT72520 FEATURES: DESCRIPTION: • Two side-by-side F IF O memory arrays for bidirectional

HGP-1004

Abstract: 2N6354 ESB91 transistor bc 144 TA7534
Contextual Info: 3875081 G E SOLID STATE 01 DE |3A750fll 001713^ 2~|~~ File Numfcier 582 120-V, 10-A, 140-W Silicon N-P-N Planar Transistor For Sw itching Applications in Military and Industrial Equipm ent Features: •* High Vceo{sus : 120 V ■ Maximum safe-area-of operation curves

IRF833

Abstract: IRF832 1RF831 30010 IRF830 IRF831 w sa 45a diode
Contextual Info: 3875081 G E SOLID STATE 01 Standard Power M O S FE T s DE 1 3Û7SQÔ1 QDlfl37‘ì S I D - - IRF830, IRF831, IRF832, IRF833 File Number 1582 Power MOS Field-Effect Transistors N -CH A NN EL EN H A N C E M E N T M ODE

GES2646

Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
Contextual Info: G E SOLID STATE 3875081 Öl G E SOLID STATE »T|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors

2N5640

Abstract: 2N5638 2N5639 2N5640 equivalent 2N5638-2N5640
Contextual Info: □1 SOLI» STATE 3875081 G È SOLID STATE De"J 3fl?S0fll ODllDOb fi 01E 11006 1 2N5638- 2N5640 D If iM f e lllL » N-Channel JF E T Switch £ FEATURES ABSOLUTE MAXIMUM RATINGS B • Econom y Packaging H • Fast Switching * • Low Draln-Source 'ON' Resistance