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    1SV252 Search Results

    1SV252 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV252 Kexin VHF UHF Band RF Attenuator Applications Original PDF
    1SV252 Toshiba Diode - Silicon Epitaxial Pin Type Original PDF
    1SV252 TY Semiconductor VHF UHF Band RF Attenuator Applications - SOT-323 Original PDF
    1SV252 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SV252 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SV252 Toshiba Diode Silicon Epitaxial PIN Type Scan PDF
    1SV252 Toshiba Silicon diode for VHF-UHF band RF attenuator applications Scan PDF
    1SV252(TE85L) Toshiba DIODE PINATTENUATOR 50V 3(1-2P1C) T/R Original PDF
    1SV252TE85L Toshiba 1SV252 - DIODE 50 V, SILICON, PIN DIODE, PIN Diode Original PDF
    1SV252(TE85L,F) Toshiba 1SV252 - DIODE VARACTOR DUAL 50V SC-70 Original PDF
    1SV252TE85R Toshiba 1SV252 - DIODE 50 V, SILICON, PIN DIODE, PIN Diode Original PDF

    1SV252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode bridge toshiba

    Abstract: 1SV252
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125


    Original     		PDF 1SV252 SC-70 diode bridge toshiba 1SV252

    smd rf transistor marking

    Abstract: 1SV252 transistor marking smd MARKING BE marking BY marking RF marking RF 98 smd marking rs smd symbols
    Text: Diodes SMD Type VHF~UHF Band RF Attenuator Applications 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Sym bol Rating Unit VR 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25


    Original     		PDF 1SV252 smd rf transistor marking 1SV252 transistor marking smd MARKING BE marking BY marking RF marking RF 98 smd marking rs smd symbols

    TOSHIBA Semiconductor Reliability Handbook derating concept and method

    Abstract: 1SV252
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C


    Original     		PDF 1SV252 TOSHIBA Semiconductor Reliability Handbook derating concept and method 1SV252

    1SV252

    Abstract: No abstract text available
    Text: 1SV252 東芝ダイオード シリコンエピタキシャルPIN形 1SV252 ○ VHF･UHF バンド減衰器用AGC 用 • 単位: mm 超小型パッケージ • 低容量 • 直列抵抗が小さい。 : rs = 3.5 Ω : CT = 0.2 pF 標準 絶対最大定格 (Ta = 25°C)


    Original     		PDF 1SV252 1SV252

    1SV252

    Abstract: No abstract text available
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C


    Original     		PDF 1SV252 1SV252

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV252 Features Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage Sym bol Rating Unit VR 50 V mA Forward current IF 50 Junction Tem perature Tj 125 T stg -55 to +125 Storage tem perature Electrical Characteristics Ta = 25


    Original     		PDF 1SV252

    Untitled

    Abstract: No abstract text available
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg -55~125


    Original     		PDF 1SV252 SC-70

    diode bridge toshiba

    Abstract: 1SV252 TOSHIBA DIODE
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg −55~125


    Original     		PDF 1SV252 SC-70 diode bridge toshiba 1SV252 TOSHIBA DIODE

    Untitled

    Abstract: No abstract text available
    Text: 1SV252 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV252 VHF~UHF Band RF Attenuator Applications Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current IF 50 mA Junction temperature Tj 125 °C Tstg −55~125


    Original     		PDF 1SV252 SC-70

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    Untitled

    Abstract: No abstract text available
    Text: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » -ES 2 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range


    OCR Scan     		PDF 1SV252 SC-70

    SV153A

    Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
    Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670


    OCR Scan     		PDF 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172 1SV252 1SV102 SV149 2V02H SV153A Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PIN TYPE 1SV252 U nit in mm V H F — UHF B A N D RF A TTEN U A TO R APPLICATIONS. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If Tj Tstg RATING


    OCR Scan     		PDF 1SV252 100MHz

    diode bridge toshiba

    Abstract: 1SV252
    Text: TOSHIBA 1SV252 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 5 2 Unit in mm V H F -U H F BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1 .2 5 Í 0 .1 oo + ' 2 • a M A X IM U M RATINGS Ta = 25°C SYMBOL RATING UNIT Reverse Voltage VR 50 V Forward Current


    OCR Scan     		PDF 1SV252 SC-70 100ju 300ju diode bridge toshiba 1SV252

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PIN TYPE DIODE 1SV252 V H F -U H F B A N D RF A T T E N U A T O R A PPLIC A TIO N S. U n i t in m m 2.1 ± 0.1 1.2 5 ¿ 0.1 2 -E& M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range


    OCR Scan     		PDF 1SV252 SC-70 100MHz

    p350j

    Abstract: No abstract text available
    Text: 1SV252 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 SV2 52 Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 1.25Í0.1 oo + » 2 -ES MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range


    OCR Scan     		PDF 1SV252 SC-70 p350j

    diode bridge toshiba

    Abstract: 1SV252 aml 10 series
    Text: 1SV252 TO SH IBA 1 SV2 5 2 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm VH F-U HF BAND RF ATTENUATOR APPLICATIONS MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If


    OCR Scan     		PDF 1SV252 SC-70 100ju 300ju diode bridge toshiba 1SV252 aml 10 series

    PF7A

    Abstract: No abstract text available
    Text: 1SV252 TOSHIBA TOSHIBA DIODE 1 SILICON EPITAXIAL PIN TYPE 51 Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. 2.1 ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range


    OCR Scan     		PDF 1SV252 SC-70 100MHz PF7A

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737