2N3300 Search Results

2N3300

Contextual Info: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2n3300

Abstract: 2N3302 2N2218 2N3300 MOTOROLA
Contextual Info: MOTOROLA SC XSTR S/R F 15E D b3b7354 Q0âb350 4 | T 'X l-o i 2N3300 CASE 79-04, STYLE 1 TO-39 TO-205AD) 3 Collector M A X IM U M RATINGS Symbol Value U nit Collector-Emitter Voltage (Applicable 0 to 10 mAdc) VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc

2N3300

Contextual Info: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

Contextual Info: M axim um Ratings Type NPN Pd Am bient mW V cb Volts 2N3250 360 2N3250A VCE Electrical Characteristics @ 25°C V C E Sat @ l c / l B H re @ Ic Volts V eb Volts M in /M ax mA 50 40 5 50/150 360 60 60 5 2N3251 360 50 40 2N3251A 360 60 2N3299 800 2N3300 ft

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

Contextual Info: 2N3300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3643

Abstract: 2N2222 2N3643 TO-105 2N2219/2N2222 bc140 high voltage npn to-92 BC727 2N2219 2N3300 2N3302
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) DEVK : e NO. Item Po arity NPN PNP hFE VCEO @ >C (VCER) (hfe) V rnA Min/Max Min VCE(sat) V @ lc

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107

2N244

Abstract: bfy5
Contextual Info: TO-39 METAL-CAN PACKAGE TRAN SISTO RS NPN Type No. tßO m Max VCB (V) hFE VCB0 VCEO VEBO (V) Min (V) Min (V) Min 2N3439 450 350 7 20.000 360 40 2N3742 300 300 7 0.200 200 lc •& VCE (mA) (V) Min Max (MA) (V) Max 0.75 15 10.0 1.00 200 30.000 10.0 50.000

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

Contextual Info: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

N3020

Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
Contextual Info: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

2N4033

Abstract: 2N2905 2N3702
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120

transistor t05

Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Contextual Info: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

Contextual Info: NATL SEMICOND DISCRETE bflE D • bS01130 003^521 fiT3 » N S C S VcEQ(HSt) (Volts) Min 32 Devices Min BCW33 100 BCX58 100 NPN PMP BCX78 30 2N2222 mA NF (dB) Max Package I’ d (Amb) (mW) @25°C Max mA (MHz) Min 420 800 2.0 300 Typ 10 3.0 TO-236* 350 120