2N3578 Search Results

Contextual Info: 2N3578 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

2N4342

Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
Contextual Info: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2SJ111

Abstract: 2SJ109BL 2SJ109GR 2N4882 2N3333 2N3112 2N5033 2SJ109V BF320 2SJ111BL
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer g. V BA GSS loss (V) (A) Min (S) Max 70 70 70 70 70 75 75 75 75 80 3.0m 4.5m 6.0m 8.0m 10m 2.0m 7.5m 7.5m 10m 17m 2.0m 3.0m 4.0m 4.5m 4.5m 350u 600u 600u 750u 6.0m 6.5m 7.0m 7.0m 7.5m 1.0m 1.5m 1.5m 3.0m 199

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

Contextual Info: LOW PO W E R FIELD EFFE C T T R A N S IS T O R S Type Number Case Style T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (PF) Idss Vgs (off) Min Max (V) (nA) lgss Max (mA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0 10.0 10.0 0.9 0.9

2n2386

Abstract: 2N2497 2N2498 2N2499 2N3380 FP22 to92 2N3330 2N3331 2N3382 2N3384
Contextual Info: *BVDgo or Type Case Geometry BFgss Number Style Min V TO2N2386 FP5.3 *20 5 TO2N2386A FP5.3 *20 5 TO2N2497 FP5.3 20 5 TO2N2498 FP5.3 20 5 TO2N2499 FP5.3 20 5 TO2N2500 FP5.3 20 5 TO2N2606 FP22.2 30 18 TO2N2607 FP22.2 30 18 TO2N2608 FP22.2 30 18 TO2N2609 FP22.2

2N2386

Contextual Info: raOEHyXgTr ÄTTÄIL LO W P O W E R FIELD EFFECT T R A N S IS T O R S m Typ« HvBttbsi \ U/AL [P O « ® ® ! •BVDgo or Ciss BVgss Style Min Max (T O - Geometry (pF) Cam (V) lgss Max (nA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0

2N3993A

Abstract: FP22 to92 2N5265
Contextual Info: m it r o n Devices. Inc r a E i y j< S T P Ì KI I Type Number â ît â il ® LOW P O W E R FIELD E F F E C T T R A N S IS T O R S •BVDgo or BVgss Ciss Case Max Min Style (TO—) Geometry (V) (pF) U » ® Vgs (off) Min Max (V) (nA) © ! ! (?•=■© K I / Ä K 1K l ( I I I

2n2386

Abstract: 2N2497 2N2498 2N2499 2N2844 UC-40 2N2606 2N3331 2N3380 2N3575
Contextual Info: [^ © UKST (SÄT/m L O W P O W E R FIELD E F F E C T T R A N S I S T O R S Type Number Case Style ( T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (pF) _ 20.0 — — — — — — — — — 13.0 33.0 1.0 2.2 1.0 60 180 540 1800 100 — — —

2N3633

Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

AC127

Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
Contextual Info: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY