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    2N6427 Price and Stock

    onsemi 2N6427

    TRANS NPN DARL 40V 0.5A TO92
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    DigiKey 2N6427 Bulk 5,000
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    New Advantage Corporation 2N6427 199 1
    • 1 $1
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    • 100 $0.03
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    • 10000 $0.03
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    onsemi 2N6427G

    TRANS NPN DARL 40V 0.5A TO92
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    DigiKey 2N6427G Bulk
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    onsemi 2N6427RLRA

    TRANS NPN DARL 40V 0.5A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6427RLRA Reel 10,000
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    onsemi 2N6427_D26Z

    TRANS NPN DARL 40V 1.2A TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6427_D26Z Reel 2,000
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    onsemi 2N6427RLRAG

    TRANS NPN DARL 40V 0.5A TO92
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    Find more 2N6427 price and stock on Findchips.com

    2N6427 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6427 Central Semiconductor Leaded Small Signal Transistor Darlington Original PDF
    2N6427 Central Semiconductor Original PDF
    2N6427 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N6427 Fairchild Semiconductor NPN Darlington Transistor Original PDF
    2N6427 Motorola Bipolar Transistor, NPN Silicon Annular Darlington Transistor Original PDF
    2N6427 On Semiconductor TRANS DARLINGTON NPN 40V 0.5A 3TO-92 Original PDF
    2N6427 On Semiconductor Darlington Transistors(NPN Silicon) Original PDF
    2N6427 Philips Semiconductors NPN Darlington transistor Original PDF
    2N6427 Philips Semiconductors Small-signal Transistors Original PDF
    2N6427 Siemens Cross Reference Guide 1998 Original PDF
    2N6427 Sinyork Mini size of Discrete semiconductor elements Original PDF
    2N6427 Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF
    2N6427 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6427 Motorola European Master Selection Guide 1986 Scan PDF
    2N6427 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6427 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6427 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6427 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6427 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6427 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2N6427 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6427

    Abstract: 2N6426
    Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc


    Original     		PDF 2N6426* 2N6427 r14525 2N6426/D 2N6427 2N6426

    2N6426G

    Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
    Text: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


    Original     		PDF 2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64

    2N6427

    Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N sot23 mark code e2 MPS-A14
    Text: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF 2N6427 MMBT6427 2N6427 OT-23 MPSA14 CBVK741B019 F63TNR MMBT6427 PN2222N sot23 mark code e2 MPS-A14

    BC237

    Abstract: 2n6426 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage


    Original     		PDF 2N6426* 2N6427 226AA) Juncti218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2n6426 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K


    Original     		PDF 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64

    2N6427

    Abstract: BP317 npn darlington transistor 2n6427
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 04 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 FEATURES PINNING


    Original     		PDF M3D186 2N6427 MAM252 SCA54 117047/00/01/pp8 2N6427 BP317 npn darlington transistor 2n6427

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: 2N6427 MMBT6427 C E C B TO-92 SOT-23 E B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings*


    Original     		PDF 2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427

    bulk inner box label ST

    Abstract: No abstract text available
    Text: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N6427 MMBT6427 2N6427 OT-23 MPSA14 bulk inner box label ST

    2N6426

    Abstract: 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG
    Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage


    Original     		PDF 2N6426, 2N6427 2N6426 2N6426/D 2N6427 2N6426G 2N6426RLRAG 2N6427G 2N6427RLRAG

    2N6427

    Abstract: No abstract text available
    Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc


    Original     		PDF 2N6426* 2N6427 226AA) 2N6427

    2N6426

    Abstract: No abstract text available
    Text: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


    Original     		PDF 2N6426* 2N6427 2N6426, 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG BRD8011/D.

    2n6426

    Abstract: No abstract text available
    Text: 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage


    Original     		PDF 2N6426, 2N6427 2N6426 2N6426/D

    2N6426

    Abstract: 2N6427
    Text: 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous


    Original     		PDF 2N6426* 2N6427 226AA) r14525 2N6426/D 2N6426 2N6427

    TRANSISTOR c 5578 B

    Abstract: 2N6427 2N6426 AN-41 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor
    Text: 2N6426 2N6427 NPN SILICON ANNULAR+ DAR LINGTON TRANSISTORS . . . designed for use as high-gain amplifiers control . circuits; drivers Collector-Emitter BVCEO for displays, Breakdown = 40 Vdc Min ● DC Current ● Low Noise Figure — Gain specified ●


    Original     		PDF 2N6426 2N6427 AN-41 AN-569. TRANSISTOR c 5578 B 2N6427 2N6426 AN-569 IC 2030 TRANSISTOR 5578 2902 transistor

    LB 124 transistor

    Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
    Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor


    OCR Scan     		PDF bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted


    OCR Scan     		PDF 2N6427 MMBT6427 MPSA14 MMBT6427

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from


    OCR Scan     		PDF 2N6427 MMBT6427 OT-23 MPSA14 bSG113D 2N6427 MMBT6427

    Untitled

    Abstract: No abstract text available
    Text: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF 2N6427 MMBT6427 2N6427 OT-23 PSA14

    2N6427

    Abstract: MMBT6427 MPSA14
    Text: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys


    OCR Scan     		PDF 2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427

    LB 124 transistor

    Abstract: 2n6427 equivalent
    Text: SAMSUNG SEMICONDUCTOR INC 14E D l'7 1 b 4 1 43 □ O G 'ínO O 2N6427 DARLINGTON TRANSISTOR TO -92 • Collector-Emitter Voltage: V ceO=40V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic I NPN EPITAXIAL • SILICON DARLINGTON TRANSISTOR


    OCR Scan     		PDF 2N6427 625mW LB 124 transistor 2n6427 equivalent

    D40K2

    Abstract: T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725
    Text: bûE D w Devices V CE0 «ist 2N7051 •e PNP Min 1 20,000 1,000 2N7053 1 2N6725 1 Max 200 200 200 1A 1.5 200 0.2 200 25,000 200 1.0 200 2mA 100 4,000 40,000 500 1.5 1A 2mA 100 60,000 1 10,000 10,000 200 1,000 1.5A 0.3 2N5308 0.3 2N6427 1 200 1,000 1.5A 2,000


    OCR Scan     		PDF 2N7051 T0-92 2N7053 O-226 2N6725 T0-237 D40C7 T0-202 D40K2 D40K2 T0202 2N7051 D40C7 2N7053 D40K4 2N5307 2N5308 2N6725

    Untitled

    Abstract: No abstract text available
    Text: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings TA = 25°C unless otherwise noted


    OCR Scan     		PDF 2N6427 MMBT6427 MPSA14 2N6427

    2N6427

    Abstract: 2n6426
    Text: 2N6426* 2N6427 M A X IM U M R A T IN G S Rating 2 Sym b o l Value Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage V cBO 40 V dc Emitter-Base Voltage Vebo 12 V dc Collector Current — C o n tinu ous 'c 500 m A dc Total Device Dissip ation <a- T a = 25’C


    OCR Scan     		PDF 2N6426* 2N6427 O-226AA) 2N6426, 2N6427 2n6426

    2n6427

    Abstract: 2N6426
    Text: 2N6426* 2N6427 M A X IM U M RATINGS Rating Symbol Value U n it v CEO 40 Vdc C ollector-Base V o ltage v CBO 40 Vdc Em itter-Base V o ltage v EBO 12 Vdc C o lle ctor-E m itter V o ltage CASE 29-04, STYLE 1 TO-92 TO-226AA C ollector C u rrent — C o ntinuous


    OCR Scan     		PDF 2N6426* 2N6427 O-226AA) 2N6426 2n6427