2SD103 Search Results

2SB812

Abstract: 2SD1032
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

2SD1030

Abstract: 581 transistor
Contextual Info: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 0.40+0.10 ñ0.05 • Features ● ● 1.9±0.1 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage

2SD1030

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE

2SD1030

Abstract: VEBO-15V
Contextual Info: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO

2SD1030

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 Th an W is k y

Contextual Info: Transistors IC SMD Type Product specification 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15

2SD1037

Abstract: MT200
Contextual Info: Product Specification www.jmnic.com 2SD1037 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Excellent safe operating area ・High current capability APPLICATIONS ・For electrical supply ,DC-DC converters and low frequency power amplifier applications

2SD1033

Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Transistor 2SD1033 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1

Contextual Info: 2SD1031 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120è V(BR)CBO (V)120 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD103

Abstract: transistor mp IC marking jw
Contextual Info: SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 D E S C R IP T IO N 2S D 103 3 is designed fo r C olor T V Vertical D eflection O utput, P A C K A G E D IM E N S IO N S in m illim eters esp ecially in H y b rid In te g rate d Circuits. FEATURES

2SD1030

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3 0.4±0.2 5˚

B1003

Abstract: TEB-1002 2SD1033 TEB-1014 MEI Semiconductors 2SB768 MEI-1202
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2SD1033 is designed fo r Color TV Vertical Deflection Output, PACKAGE DIMENSIONS in m illim eters especially in Hybrid Integrated Circuits. FEATURES • High Voltage V ceo = 150 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 2.8+0.2 –0.3 2 1 di p Pl lan nclu

2SB768

Abstract: 2SD1033
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD1033 NPN SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm The 2SD1033 is designed for Color TV vertical deflection output, +0.2 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 5.5 ±0.2 • High Voltage VCEO = 150 V • Complement to 2SB768

hfe1

Abstract: 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications.

IGNITOR Z 400 M diagram

Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8
Contextual Info: PANASONIC INDL/ELEK-CSEtllJ 7EC D | 1 1 3 5 6 5 M □ 7 ^ 3^ / / | 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^

Contextual Info: SILICON TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR M P -3 DESCRIPTION 2SB768 designed fo r Color TV Vertical Deflection Output, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • High Voltage VCEO • —150 V • Complement to 2SD1033

5841a

Abstract: 2SD1033 k1984 2SB768
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SD1033 NPN三重拡散形シリコン・トランジスタ カラーテレビ垂直偏向出力用 特 徴 外形図（単位：mm） ★ 6.5 ±0.2 5.0 ±0.2 V コレクタ − エミッタ間電圧 VCEO

2sd1037

Contextual Info: SavantIC Semiconductor Product Specification 2SD1037 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Excellent safe operating area ·High current capability APPLICATIONS ·For electrical supply ,DC-DC converters and low frequency power amplifier applications

2SD1034A

Abstract: 2SD1034
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1034A INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS a-04.0 ± a 3 MOTOR CONTROL APPLICATIONS. DEEP 2.5Ì0.4 4 MIN. FEATURES: . High Voltage : V c e SUS =450V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE

2SD1030

Contextual Info: Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 • Absolute Maximum Ratings 1.45 0.95 1.9±0.2 0.95 +0.1 +0.1 0.16 –0.06 0.1 to 0.3 0.4±0.2 Symbol Ratings Unit Collector to base voltage VCBO

2SD1030

Contextual Info: Transistors 2SD1030 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat