2SD159 Search Results

2SB1100

Abstract: 2SD1591 2SB1100 npn Ic 10a npn DARLINGTON 10A
Contextual Info: Product Specification www.jmnic.com 2SD1591 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・DARLINGTON ・Complement to type 2SB1100 APPLICATIONS ・Low frequency power amplification ・Low speed power switching applications PINNING

2SB1100

Abstract: 2sd1591 2SB1100 npn Ic 10a
Contextual Info: SavantIC Semiconductor Product Specification 2SD1591 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1100 APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications PINNING

2SD1558

Contextual Info: 2SD1558, 2SD1599 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1007 Outline T O -2 2 0 A B 3 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1558 2SD1599 Unit Collector to base voltage

2SD2334

Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
Contextual Info: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187

transistor w7

Abstract: 2SD1595 PWS300 w7 transistor
Contextual Info: 2SD1595 N P N i t 9 Z - is J ’ J U te is M u > h = 7 > ' > T . 9 { ¥ — ' > b >& % H ) N PN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier and Low Speed Switching Industrial Use 2SD1595!±, -f •/ -f > t LTBflSS 9Vf&m/ P A C K A G E D IM E N S IO N S

Contextual Info: 2SD1593K Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.6k h(FE) Max. Current gain.3.2k

2sd 1559

Abstract: IC44 2SD1558 2SB1077 2SD1599
Contextual Info: HITACHI 2SD1558, 2SD1599 SILICON NPN TRIPLE DIFFUSED LOW FREQ U EN C Y PO W ER AM PLIFIER COMPLEMENTARY PAIR WITH 2SB1077 • 13 1 “ 1, Base 2 . Collector Flange Ì . Emitter (D im ensions in mm! (JE D E C TO-22ÜAB) MAXIMUM COLLECTOR DISSIPATION CURVE

2SD1593

Contextual Info: 2SD1593 N P N i t ' ÿ + i ' T u f á is ' 3 > j^ m m NPN Silicon Epitaxial Transistor Audio Frequency Amplifier Industrial Use ^ ft/ FE A T U R E S CUBISI/ P A C K A G E DIMENSIONS offiSfííi;,±í/!Éí*7'v>> /i'W it-ii- F'^/ 'r-í-ti:, o i’í)Iifk ~C"Í~¡, hFK=800

Contextual Info: 2SD1558,2SD1599 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1007 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SD1558 2SD1599 Unit Collector to base voltage ^G B O 60 80

Contextual Info: 2SD1595 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)60 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k

Contextual Info: 2SD1597 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

NEC 2SD1564

Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2SC4488 2SD1558
Contextual Info: - 256 - M £ Type No. M % a Manuf. SANYO 2 TOSHIBA NEC 2SD 1986 □ —A 2SD1190 2SD686 2SD1564 2SD 1987 □—A 2SD1825 2SD1414 2SD1595 2SD 1988 □ —A ÍZ. HITACHI 2SD1558 * ± FU JITSU fé T MATSUSHITA □ —A T 2SD 1991 r fé T 2SD1991A 2SD 1992 y

2SD1592

Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1592 NPN SILICON TRIPLE DIFFUSED TRANSISTOR DARLINGTON CONNECTION FOR HIGH-VOLTAGE LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • High DC current gain due to Darlington connection • Low collector saturation

2SD1594

Contextual Info: Product Specification www.jmnic.com 2SD1594 Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package APPLICATIONS ・Low frequency power amplifier ・High speed switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220Fa and symbol

2sb1099

Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Contextual Info: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615

Contextual Info: 2SD1592 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.3.0k

2SD1558

Abstract: Hitachi DSA00164 2SD1588
Contextual Info: 2SD1558, 2SD1599 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1007 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 2.6 kΩ (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol

2SD1592

Abstract: eta mi SI48
Contextual Info: NEC m D arlin g to n P o w e r T ran sis to r = ÏT iS r f* 2SD1592 n p n m i > v m x i f f l N PN Silicon Triple Diffused D arlington Transistor High V o lta g e , Low Speed Sw itching Industrial Use ft m W Ì •' mm 10.5 M A X . 7 ±0.2 o a v? 4.7 M A X .

J600 transistor

Abstract: 2SD1594 transistor J600 A7 NPN EPITAXIAL J600
Contextual Info: 2SD1594 N P N i f c : ? * '>7 ^ M > U3 > T .m m NPN Silicon Epitaxial Transistor Audio Frequency Amplifier Industrial Use fl-ffiEI/PACKAGE DIMENSIONS {Unit: mm) ««/FEA TU RES o tahFF. ) □ h;•i = 800 ~ 3200 o ftV c E („,/ - 1 - „ V c E „.ti = l-0 V

2SB1100

Abstract: darlington transistor for audio power application darlington power transistor 10a 10A 100V darlington power transistor 2SD1591 transistor 10a 100v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·High DC Current Gain: hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 APPLICATIONS

2SD1599

Abstract: 2SB1007
Contextual Info: 2SD1558, 2SD1599 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1007 Outline TQ -220AB Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol 2SD1558 2SD1599 Unit Collector to base voltage ^C B O

2sd1594

Contextual Info: SavantIC Semiconductor Product Specification 2SD1594 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifier ·High speed switching industrial use PINNING PIN DESCRIPTION

2SB1100

Abstract: 2SD1591
Contextual Info: 2SD1591 N PN xbf^ + ' > 7 IJ a > t =7 > > * 9 9 ' ~ I > h > m m ) N P N Silicon Epitaxial Darlington T ra n sis to r A udio Freq uency P o w e r A m p lifier and L o w Sp e ed H igh C u rre n t Sw itch in g Industrial U se ^ • * 0 / P A C K A G E D IM E N S IO N S

2sb1099

Abstract: 2SD1590 2sB1099 transistor
Contextual Info: 2SD1590 X i f f l NPN S ilicon Epitaxial D a rlin g to n T ra n s is to r A udio Frequency P o w e r A m p lifie r and L o w Speed S w itchin g Ind u strial Use 2SD1590I±, I M S I i D t i l J S , f & i i l t X H -y + > 9'm t t T f f l S I 3 i t i^ il5 ia /P A C K A G E D IM E N S IO N S