2SD1602 Search Results

2SB1102

Abstract: 2SD1602
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1602 APPLICATIONS

Contextual Info: 2SB1101,2SB1102 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1601, 2SD1602 Outline TO -220A B 2 1 1. Base 2. C ollector Flange 3. Emitter 1 2 3 . . A 4.5 kQ 500 Q (Typ) (Typ) ^ l ' D ¿ 3 Absolute Maximum Ratings (Ta 25°C)

2SB1101

Abstract: 2SB1102 2SD1601 2SD1602
Contextual Info: HITACHI 2SD1601, 2SD1602 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1101. 2SB1102 1. 0 a « 2. Collecwr Flange 3. Emiltcr (Dimensions ir>mm) (JE D E C TO-220AB) MAXIMUM C O LL E C T O R D ISSIPA T IO N CURVE A B S O L U T E M AXIM UM R A T IN G S (Ta^25°C)

2SB1102

Abstract: 2SD1602
Contextual Info: SavantIC Semiconductor Product Specification 2SB1102 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD1602 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN

Contextual Info: 2SB1101,2SB1102 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SD1601, 2SD1602 Outline 3 Absolute Maximum Ratings T a = 25 °C Ratings Item Symbol 2SB1101 2SB1102 Unit Collector to base voltage ^G B O

2SB1102

Abstract: 2SD1602
Contextual Info: JMnic Product Specification 2SB1102 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1602 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION

2sb1099

Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Contextual Info: - 256 - i+ 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 2SD1589 2SD159Q 2SD1591 2SD1592 2SD1593 2SD1594 2SD1595 i?nicfiT b'jui'j a i 2SD1599 2SD1600 2SD1601 2SD1602 2SD1603 2SD1604 2SD1605 2SD1606 2SD1608 2SD1609 2SD1610 2SD1611 2SD1614 2SD1615

2SB1102

Abstract: 2SD1602
Contextual Info: Inchange Semiconductor Product Specification 2SB1102 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1602 ・DARLINGTON ・High DC current gain APPLICATIONS ・For low frequency power amplifier applications PINNING

Contextual Info: I HITACHI 2SD1601, 2SD1602 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2S81101, 2SB1102 -, Î 1» T Í 1. B*« 1 1 i 2. C o l i e « « Î-3T7- .V E m itte r 3Q*w* gOimamon* if» mtr» JEDEC TO-220A8) • ABSOLUTE MAXIMUM RATINGS (Ta«:.rC)

Hitachi DSA001650

Contextual Info: 2SB1101, 2SB1102 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1601, 2SD1602 Outline TO-220AB 2 1 1 1. Base 2. Collector Flange 3. Emitter 2 3 ID 4.5 kΩ (Typ) 500 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25GC)

2SB1101

Abstract: 2SB1102 2SD1601 2SD1602
Contextual Info: HITACHI 2SB1101, 2SB1102 SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601, 2SD1602 !, B ase 2 Collect« FM artgtJ Í. Emitter (Dimensions in mm (JEDEC TO-220AB) MAXIMUM COLLECTOR DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: 2SD2110 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2110 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 80 V Collector to em itter voltage V cE O 80 V Emitter to base voltage

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

1271A

Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513

Contextual Info: 2SD2110 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. C ollector 3. Emitter 1^ 1^ 4.5 kQ. Typ [1 500 Q. (Typ) ¿ 3 ¡t'D 2SD2110 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sc3667

Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00

BUY46

Abstract: 2SB657 motorola transistors to-220 SK3026 BD148 BDX14 BD587 bd189
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(BR)CE0 on PD Max toN Max (A) (s) ICBO Max hFE fT ON) Min (Hz) r (CE)ut Toper Max (Ohms) Max (°C) 555m 555m 300n 140 140 140 140 140 300n 01u 140 J 140 J TO-220AB TO-220AB TO-220

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

Hitachi DSA001650

Contextual Info: 2SD2110 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 4.5 kΩ Typ 500 Ω (Typ) 3 2SD2110 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

2SB1099

Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Contextual Info: - 74 - S % Ta=25'C, *0JttTc=25l3 m 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1Û76M 2SB1077 2SB1078K 2SB1079 2SB1085 2SB1085A 2SB1086 2SB1086A 2SB1087 2SB1089 2SB1090 2SB1091 2SB1093 2SB1094 2SB1095 2SB1096 2SB1097 2SB1098 2SB1099 2SB1100 2SB1101 2SB1102 2SB1103