450NS Search Results

M111M

Abstract: 55115 256X8 515S5 Intel 2708 2308 rom intel 8308
Contextual Info: 2607-F,l,N FEATURES • • • • • • • • • • • • • PIN DESIGNATION Static operation—no clocks Access time: 450ns max Single 5V power supply T TL compatible inputs and outputs Power dissipation: 525mW Tri-state outputs Mask programmable chip select for easy

nec 2716 eprom

Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
Contextual Info: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply

XL2804A-250

Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
Contextual Info: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation

CDP1823

Contextual Info: h a r r is Œ CDP1823 d^P1 S E M I C O N D U C T O R 128-Word X 8-Bit LSI Static RAM M arch 1 9 9 2 Features Description • Fast Access Time - Vqq = 5 V .450ns - VDO= 1 0 V .250ns

m2716a

Contextual Info: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED

R09128

Abstract: R09128B
Contextual Info: »I N i K A l IN S I K U M l N I R09128B/C/D PRELIMINARY INFORMATION 131,072 Bit Static Read Only Memory READ ONLY M EM O R Y I FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 16,384 x 8 Organization Single + 5 Volt S upply 450ns Max Access Tim e: R09128B 300ns Max Access Time: R09128C

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

2364

Abstract: A12CE SMM2364C pf051 SMM2364
Contextual Info: PF051-05 SMM2364C CMOS 64K-BIT MASK ROM •L o w Supply Current •A ccess Time 350ns/450ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The SMM2364C is an 8,192 words X 8 bits asynchronous, static, mask programmable ROM on a monolithic CMOS chip and is characterized by fast access time and very low power dissipation. The nature "static”

B2716

Abstract: m2716 FDIP24W M271616
Contextual Info: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE

RO-3-9365B

Abstract: RO-3-9365C ZENER A12
Contextual Info: C.I N f KAI IN S IR lJ M i N I RO-3-9365B/C PRELIMINARY INFORMATION 65,536 Bit Edge-Triggered Read Only Memory • ■ ■ ■ ■ 8192 x 8 Organization Single +5 Volt + 10% Supply TTL Compatible — All Inputs and Outputs Edge Triggered Operation 450ns Maximum Access Time: RO-3-9365B

M2764F1

Abstract: sgs M2764 sgs M2764f1 EPROM 2764-25 m2764-4f1 EPROM M2764 2764-25 m2764 M2764-2F1 m2764 f1
Contextual Info: M2764 a s 64K 8 K x 8 UV ERASABLE PROM • FAST ACCESS TIME: 200ns 250ns 300ns 450ns M AX MAX MAX MAX M2764-2F1 M 2764F1/-25F1/F6 M 2764-3F1/-30F1 M 2764-4F1/-45F1/-4F6 • SINGLE + 5 V POWER SUPPLY • LOW STAND BY CUR RENT 40mA MAX • INPUTS AND O UTPU TS TTL COM PATIBLE

HM472114P-3

Abstract: 2114L HM-472114-3 HM472114-3 HM472114P3 HM472114-4 HM472114P-4
Contextual Info: H M 472114 -3 ,H M 4 7 2 1 14-4, H M 472114P-3,H M 472114P -4 1 0 2 4 -word X 4-bit Static Random Access Memory • Fast Access T im e . H M 4 7 2 1 14-3 300ns {max. HM 472114-3, HM 472114-4 H M 4 7 2 1 14-4 450ns m ax.)

Contextual Info: XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns , ■ 5 Volt-only Operation ■ Industrial Temperature Range Available XLE2865A ■ Fast Nonvolatile Write Cycle

NTE2708

Abstract: 1702 eprom 1702 eprom programmer 74LS
Contextual Info: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–

1N914

Abstract: FDIP24W M2716
Contextual Info: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM

SM2716

Contextual Info: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED

B2716

Abstract: FDIP24W M2716 m2716 dip M2716* eprom
Contextual Info: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM

Contextual Info: rZ J SGS'THOMSON ^7 # E ülD »[llLll @ (M a(@ i M 2716 NMOS 16K (2Kx 8 UV EPROM • 2048x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED

AM2716

Abstract: circuit diagram of m2716 m2716 1N914 FDIP24W
Contextual Info: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS and OUTPUTS TTL COMPATIBLE

MOSTEK MEMORY MK36000

Abstract: MK36000-4 MK36000 MOSTEK 36000 MK36000-5 8k mostek mk36 10PA2 mostek rom mk36000
Contextual Info: MOSTEK 64K-BIT READ-ONLY MEMORY M K36000 P/J/N -4/5 O M K 3 6 0 0 0 8 K x 8 O rganization— "E d g e A c tiva te d " * operation (C E) P/N M K 3 6 0 0 0 -4 M K 3 6 0 0 0 -5 Access 250n s 300ns Cycle 375ns 450ns □ Single + 5 V ± 1 0 % Power Su p p ly □

2142-2

Contextual Info: in te ! 2142 1024 X 4 BIT STATIC RAM 2142-2 2142-3 2142 2142L3 2142L Max. Access Time ns 200 300 450 300 450 Max. Power Dissipation (mw) 525 525 525 370 370 High Density 20 Pin Package No Clock or Timing Strobe Required Access Time Selections From 200-450ns

XCS50

Contextual Info: HARRIS SEMICOND SECTOR HARRIS SEMICONDUCTOR • M 3 Q 2 2 7 1 003101=1 1 H H A S - r - 4 g ,- 2 3 - 12. C D P C D P 1 1 8 8 2 2 3 3 C 128-Word x 8-Bit LSI Static RAM March 1992 Features Description • Fast Access Time . Vdd = 5 V . 450ns

Contextual Info: MICROELECTRONICS XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 28 Pin CERDIP Type "C" Package ■v ^ r , ■ 5 Volt-only Operation — Including Write