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    KM6264 Price and Stock

    Samsung Semiconductor KM6264BLG-10LT

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    Bristol Electronics KM6264BLG-10LT 3,000
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    Samsung Semiconductor KM6264BLG7T

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    Samsung Semiconductor KM6264BLG-7TA

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    Samsung Semiconductor KM6264BLG-7

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    Quest Components KM6264BLG-7 205
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    KM6264BLG-7 88
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    Samsung Semiconductor KM6264AL10

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    KM6264 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6264 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM6264-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264-15 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KM6264A-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264A-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264A-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264AL Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KM6264AL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264AL-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264AL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264B Samsung Electronics 8Kx8 bit Low Power CMOS Static RAM Original PDF
    KM6264BL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-10 Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-10L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-10L Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-12 Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-12L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    KM6264 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM6264

    Abstract: KM6264B KM6264BLP-7 28-SOP 8KX8-Bit CMOS SRAM km6264blg-10 KM6264BLG-10L CC02V
    Text: CMOS SRAM KM6264B Family 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : CMOS • Organization : 8K x 8 • Power Supply Voltage : Single 5V ± 10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    Original     		PDF KM6264B 28-DIP, 28-SOP KM6264BL 600mil) KM6264 KM6264BLP-7 28-SOP 8KX8-Bit CMOS SRAM km6264blg-10 KM6264BLG-10L CC02V

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SE MI CO NDUCTOR INC 1Û D e J 7 ^ 4 1 4 2 000S537 .— •. ' T-46-23-12 KM6264A/KM6264AL CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • • • • • •


    OCR Scan     		PDF 000S537 T-46-23-12 KM6264A/KM6264AL KM6264A/AL 538-bit 150ns 100/iA 00D5544

    KM6264AL-10

    Abstract: KM6264A km6264al
    Text: KM6264A/KM6264AUKM6264AL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10/tW (typ.) L-Verslon 5pW (typ.) LL-Version Operating: 220mW (max.) • Single 5V ± 10% Power Supply


    OCR Scan     		PDF KM6264A/KM6264AUKM6264AL-L 10/tW 220mW KM6264A/AUAL-L: 28-pin KM6264AG/ALG/ALG-L: KM6264A/AL/AL-L 536-bit KM6264A/KM6264AL/KM6264AL-L KM6264AL-10 KM6264A km6264al

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42 E ]> 71 bmM 2. OGI0 7 b l T I KM6264A/KM6264AL/KM6264ALL CMOS SRAM " T ^ e v ? 8 K x 8 B i t S t a t ic R A M FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns (max. • Low Power Dissipation Standby (CMOS): 10/jW (typ.) L-Verslon


    OCR Scan     		PDF KM6264A/KM6264AL/KM6264ALL 10/jW 220mW KM6264A/AL/AL-L: 28-pin KM6264AG/ALG/ALG-L: 28-pln KM6264A/AL/AL-L 536-blt KM6264A/KM6264AL/KM6264AL-L

    6264B

    Abstract: 6264BL-7L cs1g 6264bl KM6264BL
    Text: KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 70,100,120 ns m ax. • Low P o w er D issipation S tandb y (C M O S): 10;-W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 5 5 m W /M H z (max.)


    OCR Scan     		PDF KM6264BL/KM6264BL-L 6264B 28-pin KM6264BL /KM6264BL-L 6264BL-7L cs1g 6264bl

    Untitled

    Abstract: No abstract text available
    Text: KM6264B Family CMOS SRAM 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM6264B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges


    OCR Scan     		PDF KM6264B 28-DIP, 28-SOP

    TC551001a

    Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
    Text: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##


    OCR Scan     		PDF HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 HY62256A MB84256A TC551001a CXK584000 Fujitsu FLL 100 cxk58527 uPD434000 M5M51008 SRM20256

    KM6264AL-10

    Abstract: KM6264AL KM6264AL10L KM6264AL10 km6264a KM6264A10 KM6264AL-7 cs1g KM6264A-10
    Text: KM6264A/KM6264AL/KM6264AL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10pW (typ.) LVersion 5/xW (typ.) LL-Verslon Operating: 220mW (max.) • Single 5V ±1 0 % Power Supply


    OCR Scan     		PDF KM6264A/KM6264AL/KM6264AL-L 220mW KM6264A/AL/AL-L: 28-pin KM6264AG/ALG/ALG-L: KM6264A/AL/AL-L 536-bit KM6264A/AUAL-L haKM6264AL-L KM6264AL-10 KM6264AL KM6264AL10L KM6264AL10 km6264a KM6264A10 KM6264AL-7 cs1g KM6264A-10

    Untitled

    Abstract: No abstract text available
    Text: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100, 120 ns Max. • Low Power Dissipation Standby (CMOS): 10nW(Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) • Single 5V±10% Power Supply


    OCR Scan     		PDF KM6264BL KM6264BLP/BLP-L 28-pin DIP-600B KM6264BLG/BLG-L OP-45Q KM6264BL/BL-L 536-bit 7Tfci4142

    KM6264BL-10L

    Abstract: 6264bl km6264 6264 SRAM
    Text: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		PDF KM6264BÃ KM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L KM6264BLVBL-L KM6264BL-10L 6264bl km6264 6264 SRAM

    Untitled

    Abstract: No abstract text available
    Text: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 70,100,120 ns m ax. • Low P ow er D issipation Standb y (CM OS): 10MW (typ.) L-Version T h e K M 6 2 6 4 B /B L /B L -L is a 6 5,5 36 -b it h ig h -s p e e d S ta tic


    OCR Scan     		PDF KM6264B/KM6264BL/KM6264BL-L 28-pin 6264B KM6264B/KM6264BL /KM6264BL-L

    Untitled

    Abstract: No abstract text available
    Text: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 55mW/MHz (max.) • Single 5V ± 10% Power Supply


    OCR Scan     		PDF KM6264B/KM6264BL/KM6264BL-L 55mW/MHz KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit

    KM6264BL-10

    Abstract: KM6264BL-10L KM6264BL-12 DIP-600B KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10
    Text: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,1 0 0 , 120 ns Max. • Low Power Dissipation Standby (CMOS): 10|iW (Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) •Single 5V±10% Power Supply


    OCR Scan     		PDF KM6264BL KM6264BLP/BLP-L 28-pin DIP-600B KM6264BLG/BLG-L OP-45Q KM6264BL/BL-L 536-bit 00217S4 KM6264BL-10 KM6264BL-10L KM6264BL-12 KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC 23E D 7^4142 KM6264A/KM6264AL 00 0 0 2 41 7 CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • The KM6264A/AL is a 65,536-bit high speed Static Random Access Memory organized as 8,192 words by


    OCR Scan     		PDF KM6264A/KM6264AL KM6264A/AL 536-bit 120ns 100/iA 28-pin

    km6264

    Abstract: KM6264BL-10L KM6264BL10L 6264bl KM6264BLS SRAM 6264 m6264 KM6264BL-10
    Text: KM6264BUKM6264BL-L CMOS SRAM 8 K x 8 Bit Static R A M GENERAL DESCRIPTION FEATURES • Fast Access Time : 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) : 10« W (typ) L.Version : 5// W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		PDF KM6264BUKM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L OP-450 km6264 KM6264BL-10L KM6264BL10L 6264bl KM6264BLS SRAM 6264 m6264 KM6264BL-10

    KM6264BL-10L

    Abstract: KM6264BL-10 KM6264BL-7 KM6264BL7L KM6264BL7 KM6264BL-7L
    Text: CMOS SRAM KM6264BL/KM6264BL-L 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10nW (typ.) L-Version 5(iW (typ.) LL-Version Operating: 55mW /MHz (max.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		PDF KM6264BL/KM6264BL-L KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit KM6264BL-10L KM6264BL-10 KM6264BL-7 KM6264BL7L KM6264BL7 KM6264BL-7L

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7


    OCR Scan     		PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


    OCR Scan     		PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"

    AKM6264ALP-10

    Abstract: km6264a AKM6264ALP-10L AKM6264ALP-12 AKM6264ALP-12L AKM6264ALP-15 AKM6264ALP-15L AKM6264AP-15 AKM6264ASP-10 KM6264
    Text: A KM 6264A S e r ie s 8192-word x 8-bit High Speed CM O S Static R A M • FEA TU RES • Low Power Standby AK.M6264AP Series Standby: O.ImW typ. 10/nW (typ.) L-/LL-version Operating: 15mW/MHz (typ.) 100ns/120ns/150ns (max.) Low Power Operation Fast access Time


    OCR Scan     		PDF AKM6264A 8192-word 10/LiW 15mW/MHz 100ns/120ns/150ns KM6264AP-10 M6264AP-12 AKM6264AP-15 100ns 120ns AKM6264ALP-10 km6264a AKM6264ALP-10L AKM6264ALP-12 AKM6264ALP-12L AKM6264ALP-15 AKM6264ALP-15L AKM6264ASP-10 KM6264

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A