T0205AD Search Results

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

2N3019A

Abstract: 2N3501A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725

2N2219A MOTOROLA

Abstract: 2N2219A 2N2219AJAN 4101 transistor
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

MRF544

Contextual Info: M OT OR OL A SC XSTRS/R F 4bE D b3h7ES4 GQTMTMM fl « f l O T b MOTOROLA • I SEMICONDUCTOR I TECHNICAL DATA M R F544 M RFC 544 The RF Line NPN Silicon H ig h Frequency T ra n sisto rs |q = 4 0 0 m A . . . d e s ig n e d f o r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h r e s o lu tio n c o lo r v id e o

BC 939 Transistor Data

Abstract: MJ4647 MJ4646
Contextual Info: MOTOROLA S C XSTRS/R F 12E 0 I b3b75S4 MOTOROLA 0004103 I T*+J7 MJ4646 MI4647 SEMICONDUCTOR TECHNICAL DATA 1.0 AM PERE POWER TRANSISTORS PNP SILICON 200-300-400 VOLTS 5 WATTS PNP SILICO N POWER TRANSISTORS . . . designed for high-voltage amplifier and saturated switching appli­

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR IT ¡electronics . Semelab Limited 2N2905A • Hermetic TO-39 Métal package. • High Speed Saturated Switching • Screening Options Available ABSOLUTE M A X IM U M RATINGS 0 a = 25°C unless otherwise stated

RCA-2N2102

Abstract: 2n2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457
Contextual Info: SOLID STATE Dl DE I 3fl7SDÖl H igh Speed Pow er Transistors- 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors \ y ^ Z7~f? = - 0017007 T File Number 106 TER M IN AL DESIGNATIONS For Small-Signal Applications

VP0300M

Abstract: 150EC VP0300L
Contextual Info: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V

2N4405

Abstract: 2N4890 2N4036 2N4929 2N4037 2N4404 2N4406 2N4407 2N4928 2N5022
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 IC/ V c e min/max @ mA/V @ Ic/IB V @ mA/mA c <p P MHz 1.0 40/140@150/10 0.65@150/15 30 60 40 1.0 50/250@l 50/10 1.4@150/15 30 60 2N4404 80 1.0 40/120@ 150/5 0.2@150/15 10 200 2N4405

MOTOROLA SELECTION mrf237

Abstract: mrf237 MOTOROLA MRF239 MRF260 MRF212 MRF4070 2N6255 MOTOROLA Motorola 2N6080 motorola mrf237 MRF227
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers The transistors listed in these tables are specified for operation in Class C RF power am plifier circuits. The tables are arranged by increasing frequency of operation first, then by increasing output power.

Contextual Info: MOTOROLA THREE-TERMINAL LOW CURRENT NEGATIVE FIXED VOLTAGE REGULATORS THREE-TERMINAL LOW CURRENT NEGATIVE VOLTAGE REGULATORS The MC79L00 Series negative voltage regulators are inexpensive, easy-to-use devices suitable for numerous applications requiring up to

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

Contextual Info: SEMICONDUCTOR i TECHNICAL DATA 2N4405JAN, JTX Processed per MlL-S-19500 448 PNP Silicon Small-Signal Transistor crystaiomcs 2805 Veterans Hwhwav Oesigned><y genijra^oufpcse sw uchinyano ampui.er 3£*ii>CJit*or,s S u ite 14 Ronkor koma. N.Y. 1177 i MAXIMUM RATINGS

2n4929

Abstract: 2N4405
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V ceo sus VOLTS Ic (max) AMPS ^FE @ IC/ VcE min/max @ mA/V VcE(wt) @ I c/I b V @ mA/mA C(P P ij (MHz) 2N4036 65 1.0 40/140@l 50/10 0.65@150/15 30 60 2N4037 40 1.0 50/250@l 50/10 1.4@150/15

2N3819 MOTOROLA

Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
Contextual Info: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup­

88AFD

Contextual Info: Tem ic 2N6661/VN88AFD Se c o n du c t o r s it i N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR DSS Min (V ) rus< on) M a x ( f i ) V g S(Ui ) (V ) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 I d (A ) 0.9 VN 88AFD 80 4 @ VGs = 10 V

MOTOROLA TRANSISTOR MRF239

Abstract: MRF239 MRF212 MOTOROLA SELECTION mrf237 MRF238 mrf237 MOTOROLA mrf239 MOTOROLA MRF260 145A-09 MRF237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N1711 MOTOROLA

Abstract: 2n1711 2N956 2N956 MOTOROLA 2n718a
Contextual Info: 2N718A 2N956 M A X IM U M R ATIN G S Rating Symbol 2N718A 2N956 2N1711 Collector-Emitter Voltage VCER 50 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage v EBO Total Device Dissipation a T ^ = 25°C Derate above 25°C PD Total Device Dissipation

VP0300B

Abstract: vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217
Contextual Info: _VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS M in (V ) rDS(on) Max (Q ) Id (A) V GS(th) (V ) VP0300B 2.5 @ VGS = —12 V - 2 to —4.5 -1.25 VP0300L

Contextual Info: T e m ic 2N6660JAN/JANTX/JANTXV Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Min V 60 Max (Q) 3@ V gs = 10 V V (BR)DSS Features • • • • • • Military Qualified Low On-Resistance: 1.3 Q Low Threshold: 1.7 V Low Input Capacitance: 35 pF