AS4C14405 Search Results

Contextual Info: H igh Perform ance lMx4 CMOS DRAM |B AS4C14405 A ! M x 4 CMOS EDO DRAM Preliminary information Features • O r g a n iz a t io n : 1 , 0 4 8 , 5 7 6 w o r d s x 4 b its • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in t e r v a l • H ig h sp e ed

RAS 0510

Abstract: as4c14400-60jc AS4C14400-40JC alliance as4C14405 AS4C14405-50JC AS4C14405-60JC AS4C14400 AS4C14405 4C14400-70 alliance promotion
Contextual Info: High Performance 1Mx4 CMOS DRAM AS4C14400 AS4C14405 1M-bit × 4 CMOS DRAM Fast page mode or EDO Preliminary information Features • 1024 refresh cycles, 16 ms refresh interval • Organization: 1,048,576 words × 4 bits • High speed - RAS-only or CAS-before-RAS refresh

Contextual Info: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write

1I-3Q006-A

Contextual Info: H i <; li IV !'t <>r ! 11.! r !M > • \io s D l: 4 Ii S A : M A l C M O S U Ù UK. , M Prelim inary inform ation Features • Organization: 1,048,576 words x 4 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh

zl24

Contextual Info: H iy h P e r f o r m a n t e n AS4CI440S il. IMX- I H CMOS DRAM H X 4 C MO S l'D O DRAM Advance information Features • O rganization: 1 ,0 4 8 ,5 7 6 w ords x 4 bits • H igh speed • 1024 refresh cycles, 16 m s refresh interval - RA S-only o r CAS-before-RAS re fresh

AS4C256K16F0-60JC

Abstract: AS7C164-20PC AS7CI64-20JC AS4LC1M16ES-50TC 120TC 28K1 AS4C1440S 1SPC AS29F040-120TC as7c3
Contextual Info: í U' u i M 11; ! 1Ì ! ! i r 1 ¡ l i ü ’! 4 • -'¡si. í J Mij ! ; , t ‘ i M U I : i Synchronous SRAM part numbering system AS7C X XXXX Voltage: Blin k cram 3 25 18 (X -X X XX = 5V C M O S =3.3V CMOS =2.5V CMOS = 1.8V CMOS Density and organization

Contextual Info: 3UHOLPLQDU\LQIRUPDWLRQ $6& 90ð&026'5$0 '2 HDWXUHV • Organization: 1,048,576 words x 4 bits • High speed • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh - 60 ns RAS access time - 25 ns hyper page cycle time

SRAM 64KX8 5V

Contextual Info: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O

SRAM 64KX8 5V

Abstract: 128U K SRAM 512*8 SRAM 3.3v 1Mx8 SRAM edo dRAM AS7C40
Contextual Info: Pagenumber Produci Cross references. Il Ordering information. 13 AS7C164

AS4C1M16FS

Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
Contextual Info: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423

AS4C14405-60JC

Abstract: LR 3441 AS4C14405 DDD717 alliance as4C14405 AS4C1440S
Contextual Info: High Perform ance 1M X 4 CMOS DRAM « II I i A S 4 C 14405 1M X 4 C M O S E D O D R A M Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 w ords x 4 bit • H igh speed * 1024 refresh cycles, 16 m s refresh interva - KAS-only o r CAS- before -RAS refresh

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4