B4142 Search Results

1815

Abstract: B39182-B4142-U410 B4142 C61157-A7-A67 GSM1800 GSM1900 GSM900
Contextual Info: SAW Components Data Sheet B4142 SAW Components B4142 1842,50 MHz Low-Loss Filter for Mobile Communication Data Sheet Ceramic Package DCC6C Features ● Low-loss RF filter for mobile telephone PCN sys- tem, receive path ● High selectivity ● Usable passband: 75 MHz

irf9610 samsung

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^b4142 0Q122bb SBQ « S M G K P-CHANNEL POWER MOSFETS IRF9610/9611 /9612/9613 FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

B39182-B4142-U410

Abstract: B4142 C61157-A7-A67
Contextual Info: SAW Components Data Sheet B4142 SAW Components B4142 1842,50 MHz Low-Loss Filter for Mobile Communication Data Sheet Ceramic package DCC6C Features ● Low-loss RF filter for mobile telephone PCN sys- tem, receive path ● High selectivity ● Usable passband: 75 MHz

WindCap

Abstract: epcos dssp
Contextual Info: SAW Components SAW RF filter PCN Rx filter Series/type: Ordering code: B4142 B4142U410 Date: Version: Feb 26, 2009 2.0 *Appendix to Data sheet Specifications for extended temperature range  EPCOS AG 2009. Reproduction, publication and dissemination of this data sheet, enclosures

Contextual Info: SAMSUNG E L E C T R O N IC S IN C 42E D B 7^b4142 QQ1Q173 4 • SNÛK CMOS DRAM KM41C4001 Ö w 5 4M X1 Bit CMOS Dynamic RAM with Nibble Mode ‘ FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4001 is a high speed CMOS 4,194,304 bit X 1 Dynamic Random Access Memory,

SOT23 marking sk

Abstract: KSC2715 Transistor marking SK marking sk sot-23 marking sk transistor
Contextual Info: SAMSUNG S EMI C O NDU CT OR 14ED1 INC KSC2715 ? c , b4142 OOO^S? 1 | f ' 3 i m NPN EPITAXIAL SILICO N TRANSISTOR FM RADIO AMP, MIX, CONV OSC, IF AMP SOT-23 • High Power Gain G pe=30dB ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol VcbO VcEO Vebo

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

4.19MHz crystal

Abstract: KS57C2504 B4MS
Contextual Info: KS57C2504 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C2504 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With up to 320-dot LCD direct-drive capability, 8-bit timer/counter, serial I/O, and comparator, the KS57C2504 offers an

KM29N040T

Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Contextual Info: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective

KM44C4004B

Contextual Info: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.

gd243

Contextual Info: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

KM68V4000

Contextual Info: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min

Contextual Info: KS57C3016 ELECTRONICS Mi crocontroller DESCRIPTION The KS57C3016 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With its up to 16-digit LCD direct-drive capability, 4-channel A/D converter, 8-bit timer/counter, PLL frequency synthesizer, and

Contextual Info: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8

Contextual Info: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual

KM23C4001

Contextual Info: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using

Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0065 40-CHANNEL SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD 60 QFP T h e K S 0 0 6 5 is a LC D d riv e r LSI w h ic h is fa b ric a te d b y lo w p o w e r C M O S te c h n o lo g y B a s c ia lly th is LSI c o n s is ts o t 2 0 X 2 b i t b id re c -

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM416C1200L/LL • 7^4142 DDlbmO TG6 « S H C K CMOS DRAM 1 M x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C1200L/LL is a CMOS high speed 1,048,576 b itx 1 6 D ynam ic Random A ccess Memory.

Contextual Info: KS58550 CMOS INTEGRATED CIRCUIT UNIVERSAL 10 MEMORY DIALER 22-DIP-400 The KS58550 is 10 memory Tone/pulse switchable dialer with 32 digit redial memory. The Flash time is selectable on the keyboard. Also, Hands Free and Hold function are controlled on the

Contextual Info: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM O S Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 f i t Static C olum n M ode C M O S DRAM s. Static C olum n M ode offers high sp e e d random a cce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2 K Ref. o r 4 K R ef. , acce ss