CXK58258 Search Results

CXK58258

Contextual Info: CXK58258AP/AJ SONY - 15/20/25 32,768-word X 8-bit High Speed C M O S Static RAM Description The C X K 5 8 2 5 8 A P /A J is a high speed CMOS sta tic RAM w h ich con sists o f 32,768-w ord x 8-bit. It operates a t 1 5 / 2 0 / 2 5 n s access tim e fro m 5V single pow er supply.

wiom DC

Abstract: 35GM wiom T3480 10 35L U1
Contextual Info: Sony. C X K 5 8 2 5 8 B P /B J /B M 32,768-word X I S ll 8-bit High Speed CMOS Static RAM * under development Description CXK58258BP 28 pin DIP Plastic The CXK58258BP/BJ/BM is a high speed CMOS static RAM which consists of 32,768-word x 8-bit. It operates at 20/25/35ns access time from 5V single

095 SONY

Contextual Info: CXK58258AP/AJ SONY. - 15/ 20/25 Preliminary 32,768-word x 8-bit High Speed CMOS Static RAM Description The C X K 58258A P /A J is a high speed CMOS static RAM which consists o f 32,768-word x 8-bit. It operates at 15 / 2 0 / 2 5 n s access time from 5V single power supply.

Contextual Info: CXK58258P/SP -35/45/55 SONY 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 8 P /S P are 26 2,14 4 bits high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications. Organized as 3 2 ,7 6 8 w o rds by 8 -b it, it operates from a

58258BM

Contextual Info: SONY,CXK58258BP/BJ/BM':20LL725LL/35LL 32,768-word X 8-bit High Speed CMOS Static RAM * under development D escription T h e C X K 5 8258 B P /B J/B M CXK58258BP 28 pin DIP Plastic is a high speed C M O S static R A M w hich con sists o f 32,768 -w ord x

Contextual Info: SO NY,CXK58258BP/BJ/BM * J o L L 7 2 5 L L V 3 5 L L 32,768-word x 8-bit High Speed CMOS Static RAM * under development D escription T h e C X K 5 8258 B P /B J/B M C XK58258BP 2 8 pin D IP P la s tic is a high speed C M O S static RAM w hich con sists o f 32,768 -w ord x

SOJ028-P-0300-A

Contextual Info: CXK58258AP/AJ -15/20/25 SONY» 32,768-word X 8-bit High Speed CMOS Static RAM D escription The C X K 5 8 2 5 8 A P /A J is a high speed CMOS sta tic RAM w hich consists o f 32,768-w ord x 8-bit. It operates a t 1 5 / 2 0 / 2 5 n s access tim e fro m 5V single pow er supply.

Contextual Info: SONY CXK58258AP/AJ - 15720 / 25 / 35 ’ 32,768-word x 8-bit High Speed CMOS Static RAM *äniySo7lSTbie Description The C X K 5 8 2 5 8 A P /A J is a high speed CMOS static RAM which consists of 32,768-word x 8-bit. It operates at 15 / 2 0 / 2 5 / 3 5 n s access

10 35L W1

Abstract: TA4F qt102
Contextual Info: SONY« CXK58258BP/BJ -20LU/25LL/35LL 20U25U35L Preliminary 32,768-word X 8-bit High Speed CM O S Static RAM Description CXK58258BP 28 pin DIP Plastic The C XK 58258B P/B J is a high speed CMOS static RAM which consists o f 32,768-word x 8-bit. It operates at 2 0 / 2 5 / 3 5 n s access time

Contextual Info: SONY, CXK58258AP/AJ -15*720/25/35 32,768-wordx 8-bit High Speed CMOS Static RAM «under development ♦Only SOJ available Description T h e C X K 5 8 2 5 8 A P /A J is a h ig h speed CMOS s ta tic R AM w h ic h c o n s is ts o f 3 2 ,7 6 8 -w o rd x 8 -b it. It o p e ra te s a t 1 5 / 2 0 / 2 5 / 3 5 n s access

5.1 sony

Abstract: CXK58258
Contextual Info: SONY» CXK58258P/SP -35/45/55 32768-word x 8-bit High Speed CMOS Static RAM Description C X K 5 8 2 5 8 P /S P are 262,144 bits high speed CMOS sta tic RAMs suitable fo r use in high speed and lo w power applications. Organized as 3 2 ,7 6 8 w ords by 8 -b it, it operates from a

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

10 35L

Abstract: sony CXK58 10 35L A8
Contextual Info: SONY. CXK5 8 2 5 8 BP/BJ/BM JSu/IsSsll 32,768-word X 8-bit High Speed CMOS Static RAM D escription The C X K 5 8 2 5 8 B P /B J is a high speed CMOS s ta tic RAM w hich con sists o f 32,768-w ord X 8-bit. It operates at 2 0 / 2 5 / 3 5 n s access tim e fro m 5V single power supply.

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without