DRAM ZIP 256KX16 Search Results

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60

Contextual Info: m i t i » MT4C16256/7/8/9 L 256K X 1 6 WIDE DRAM MICRON • SEMICONDUCTOR. MC WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process

Contextual Info: n i CR ON S E M I C O N D U C T O R IN b3E D • blllS^ OOOflbTb 11b ■ MICRON I k m ,c o n d u c t o » « c NRN M T 4C 16256/7/8/9 L 256K X 16 W ID ED R A M WIDE DRAM 256KX16DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry-standard xl6 pinouts, timing, functions

27c eeprom

Abstract: AS27C256 92132 eeprom dip 36 uv 4lc eeprom 4Mx1 sram FPM DRAM MT42C4256 256Kx4 ZIP FLASH MEMORY 29F
Contextual Info: STAND ARD MEMOR Y PRODUCT SELECT OR GUIDE ANDARD EMORY ELECTOR CERAMIC CONFIGURATIONS COMMITTED TO PROVIDING HIGH-QUALITY, INNOVATIVE SOLUTIONS TO THE HIGH-RELIABILITY MARKETPLACE STANDARD MEMORY PRODUCTS CERAMIC CONFIGURATIONS SRAM 16MEG MCM Configurable as

Contextual Info: PRELIMINARY MT4C16256/7/8/9 L 256K X 16 WIDE DRAM M IC R O N 256KX16DRAM WIDE DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIG N M EN T Top View OPTIONS • Write Cycle Access BYTE or WORD via WE - (maskable) BYTE or WORD via CÄS (maskable) • Packages

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

HM62V8512LFP

Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Contextual Info: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-

256KX8 SIMM

Abstract: 512kx8 dram simm dram zip 256kx16 1mx8 DPS 119 61 sram 256kx8
Contextual Info: TABLE OF CONTENTS GENERAL PRODUCT INFORMATION Reference by S iz e . 4 Dense-Pac Microsystems Modules and M onolithics. 5

Contextual Info: M IC R O N • 512K X SEMICONDUCTOR. MC WIDE DRAM 8 MT4C8512/3 WIDE DRAM 512K X 8 DRAM FAST-PAGE-MODE FEATURES • Industry-standard x8 pinouts, timing, functions and packages • Address entry: ten row-addresses, nine columnaddresses • High-performance CMOS silicon-gate process

DRAM 64kx16

Abstract: dram zip 256kx16
Contextual Info: Changed Point in '96 DRAM Databook Compared with '95 databook Changed Point in '96 DRAM databook Remarks - Remove TSOP ll(reverse) package General - Remove 80ns version in 5V product - Remove SC Mode, WPB Mode product - Remove 512Kx9 and 256Kx18 product

128-QFP

Abstract: M5M410092 m5m4v4169c
Contextual Info: A -MITSUBISHI ELECTRIC L-31004-0C New Product / Under Development ASM Function Memory cap Organization Type name Supply Voltage V Access time (ns) Synchronous DRAM 4M 4M Synchronous Graphic RAM 16M 2bankxl28Kxl6 2bankxl25Kxl6 2bankx256Kx32

dram zip 256kx16

Contextual Info: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

A7 VC 23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CM OS high-speed, dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS silicon-gate pro­

Contextual Info: I * * • " /G PRELIMINARY MICRON I 256K SEMICONDUCTOR MC WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • In d u stry -stan d ard x l6 pinouts, tim ing, functions a n d packages • A ddress entry: ten row -addresses, eight colum naddresses

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80

256kx16 ucas zip

Contextual Info: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance

Contextual Info: DRAM 1 • DRAM - Normal Voltage Versions (CMOS) Vcc= +5V±10%, Ta=0°C to +70°C Organization ( Wx b ) Part Number Access Time max. (ns) Cycle Time min. (ns) Power Consumption max. (mW) Operating 4 M x1 M B 8 1 4 1 0 0 A -6 0 6 0 [1 5 ]'1 110 605 M B 8 1 4 1 0 0 A -7 0

mb87020

Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB3776A mb501l MB506 ULTRA HIGH FREQUENCY PRESCALER
Contextual Info: F U J I T S U Master Product Selector Guide FUJITSU MICROELECTRONICS, INC. Visit our web site for the latest information: http://www.fujitsumicro.com Customer Response Center: For semiconductor products, flat panel displays, and PC cards in the U.S., Canada and Mexico,

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

Contextual Info: JBL i»1M3 M IC R O N MT4C16260/1 256K x 16 WIDE DRAM I WIDE DRAM 256 K x 16 DRAM ASYMMETRICAL, FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • Address entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process

dram zip 256kx16

Abstract: I8833C
Contextual Info: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2