G347 Search Results

G5832-21

Abstract: 4801B G5832-11 G3476-01 B1920-01
Contextual Info: Dimensional Outlines Unit: mm i G5832-02, -03 O G3476-01, etc. WINDOW f 3.0+0 1 G5832-05, etc. f 5 4+0.2 f 5.410.2 f 13 9+0.2 f 4 7 t0 1 <p 4.710.1 ÿ 12.3510.1 f W IN D O W I < M 0.5t01 *4 § ! i WHDA0002EB Q G5832-21, etc. O G5832-11, etc. 4 15.3=0.2 WINDOW

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

Contextual Info: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de­ vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream­ plifier into a metal case. Simply by connecting to a DC power supply,

G5832

Contextual Info: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­

Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.

P4488

Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

Contextual Info: AlVIF» Catalog 8 2 07 4 G uide to RF C o n n e cto rs Revisse 5-98 BNC Connectors, 50 Ohm Continued Panel Jacks, Crimp Connectors Connector Cable Range Selection Code* HG/U Cable Center Termination Contact Type Plating Body Plating Dielectric Style M39012/

P4488

Abstract: P4488-02 G5832-02 C4159 b617 G3476 a7050 P394 series G5832-05 P3782-12
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

G5832-01

Abstract: G5832-03 G5832-05 G3476-01
Contextual Info: InGaAs PIN Photodiodes standard Types Spectral Response Range: 0.7 to 1.7/0.9 to 1.7 |xm High-speed and low noise NIR (Near Infrared) detectors InGaAs PIN photodiodes have small terminal capacitance and there­ fore achieve high-speed response. In addition, these devices feature

B5170

Abstract: P4115 Thermistor IR Detector Ir detector pin details b2538 ps138 B1920-01 B2144
Contextual Info: Dimensional Outlines Unit: mm O B1720-02, etc. B1720-05 B2144-01, etc. 1 102 _ I #81±01 WINDOW I t* *•; *5 9 ± 0 I ' I I E SENSITIVE SURFACE ( ' fcj „ ! 1 KIROA0024EA O B1919-01 B1920-01 B3188 *1 3 8 + 02 *1 2 4 + 0 2 ir k ,« KIRDA0026EA PIN No

B5170

Abstract: B5170-05 G3476-01 G3476-10 P2682-01 B 1403 N P3226-02 B5170-02 G5125-10 P903
Contextual Info: Applications of Infrared Detectors I n frared rad iatio n is u tilized in a w i d e ra n g e o f te c h n ic a l a n d sc ien tif ic fields, i n clu din g in d u str y , ag r i c u l t u re , m e d i c i n e , a s t r o n o m y , c o m m u n i c a t i o n s a n d r e m o t e s e n s i n g f ro m

G171

Abstract: G347 g179
Contextual Info: T6LD4 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic T6LD4 Gate Driver for TFT LCD Panels Unit : mm The T6LD4 is a 350 / 342-channel output gate driver for TFT LCD panels. T6LD4 User Pitch Area IN OUT For the latest TCP / COF specifications and product line-up, contact Toshiba or

tce 1994

Abstract: 28C16A MC520
Contextual Info: M 28C 16A ic r o c h ip 16K 2K x 8 CMOS EEPROM BLO CK DIAGRAM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 jis or 1 ms • Data Retention >10 years

Contextual Info: K M 4 4 C 4 1 05B S ELECTRONICS CMOS D R A M 4 M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

G3476-10

Contextual Info: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G a A s -P IN p h o to d io d e s h a v e a s m a ll le r m in a l c a p a c ita n c e an d th erefo re achieve fast response. In ad dition, these d ev ices feature low noise o p eratio n due to large shunt resistance.

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

HX8257A

Abstract: s534 diode HX8257-a g434 diode s448 schottky diode S698 DIODE Himax HX8257-A HX8257-A01 Himax CKV 2310
Contextual Info: DOC No. HX8257-A01-DS HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01, November 2008 HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01 November 2008 1. 2. 3. 4. 5. 6. 7. General Description . 4

HX8352C

Abstract: hx8352
Contextual Info: DOC No. HX8352-C(T -DS ) HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Temporary version 01 April, 2010 HX8352-C(T) 240RGB x 432 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents

250M

Abstract: IRFF220 IRFF221 IRFF222 IRFF223 T4 sm diode PD937
Contextual Info: HE 0 I MaSSMSZ 0GQT37Q Ö | Data Shçet No. PD-9.378E INTERNATIONAL R E C T I F I E R ' 7 -3 Ÿ -O Ÿ INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRFF220 IRFF221 IM-CHAIMIMEL POWER MOSFETs TQ-39 PACKAGE IRFFSSS IRFFSS3 Features: 200 Volt, 0.8 Ohm HEXFET

G5832-01

Abstract: G5832
Contextual Info: InGaAs PIN Photodiodes Standard Types, Short-wavelength Enhanced Types, etc, High-performance NIR (Near Infrared) detectors with low noise • A wide line-up of device types are available: L a rg e a re a ty p es, sh o rt-w a v e len g th e n h an c e d ty p e s, etc.

Contextual Info: InGaAs-PIN Photodiodes High-speed NIR Near Infrared Detectors with Low Noise In G aA s-P IN p h o to d io d e s h ave a sm all term in al c ap a citan c e and therefore achieve last response. In addition, these devices feature low noise operation due to large shunt resistance.

Infrared photodiode preamplifier

Contextual Info: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Two-color detectors cover a broad spectral response range, and are effectively used in such applications as flame monitors, spectro­ photometers and film thickness gauges.

P3226

Abstract: P5168 P3226-02 G5832-05 P2682-01 P394 series Photodiode 2PIN TYPES G3476-01 G5832-02 P3258-02
Contextual Info: PbS Photoconductive Detectors Easy-to-use photoconductive detec­ tors with high responsivity over 3 jim • Operates at room temperature Since PbS cells operate stably at room temperature, they are used in a wide range of applications such as radiation thermometers and flame

ATXP1

Abstract: G3476-01 B2538 P2613 B2538-05
Contextual Info: HAMAMATSU CORP n E ». L MSHTbOT OOOE^? T • IJStiBB^äM^SäSlBr Pyroelectric Infrared Detectors Type No. Effective Window Spectral Sensitive Material Response 1Hz 10Hz Area Noise M NEP 500,1,1 D* (500,1,1) (mm) (wm) (WW) (V/W) (nV/Hz’/*) (W/Hz'/a) (cmHz’-^/W)