KM658128 Search Results

Contextual Info: KM658128/L/L-L/LD/LD-L Pseudo SRAM SAMSUNG ELECTRONICS INC 42E D BB 7 ^ 4 1 4 2 12 8K X 8 Bit CMOS Pseudo Static RAM . QQiaflSS T f FEATURES GENERAL DESCRIPTION • Fast Access Time: — 5 1 Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle

KM658128

Contextual Info: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)

km658128

Abstract: 658128 PSEUDO SRAM
Contextual Info: KM658128/L/L-L/LD/LD-L Pseudo SRAM 12 8 K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random ReadfWrite Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

Contextual Info: KM658128/L7L-ULD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast AcceM Time: — SE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle T im e . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

KM658128A

Contextual Info: KM658128A/AL/AL-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

KM658128A

Contextual Info: KM658128A/AL/AL-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

658128

Abstract: KM658128A
Contextual Info: Pseudo SRAM KM658128A/AL/AL- L 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

Contextual Info: SAMSUNG ELECTRONICS INC b7E T> 7 ^ 4 1 4 2 D017532 447 « S U G K KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE A ccess Time . 80,100,120ns Max. — Cycle Tim e . Random R ead/W rite Cycle

658128

Abstract: KM658128-8 km658128-10
Contextual Info: KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — E l Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)

658128

Contextual Info: KM658128/L/L-L/LD/LD-L Pseudo SRAM 128K X 8 Bit CMOS Pseudo Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: — CE A ccess Tim e . 80,100,120ns Max. — Cycle Tim e . Random R ead/W rite Cycle Tim e . 130,160,190ns (Max.) • Low Power Dissipation . 200m W typ. (Active)

658128

Abstract: KM658128 TC518128 HM658128ALP-12 HM658128ALFP-8 HM658128P-12 tc518128apl HM658128ADP-12 HM658128ALP-8 KM658128-10L
Contextual Info: - 152 IM P s e u d o A X m & ÄSieH ít £ ca TAAC ns TCAC max (ns) V S t a t i c * V 7 R A M (1 31 0 7 2 x 8 ) 3 2 PI N ft TOE max (ns) TOH min (ns) TOD max (ns) TWP (ns) TDS min (ns) 6 5 8 1 2 8 A TDH min (ns) TWD min (ns) TWR max (ns) V D D or V CC

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

KM658128

Contextual Info: PRINTED IN KOREA Circuit diagrams utilizing SAMSUNG products are included as a means of illustrating typical semiconductor applications; consequently, complete information sufficient for construction purposes is not necessarily given. The information has been carefully checked and is believed

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC