KM681000C Search Results

km681000clg-5l

Abstract: KM681000CLP-7 KM681000CLP-7L KM681000CLT-5L KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L
Contextual Info: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

0820R

Abstract: KM681000CLG-7L KM681000CLGI-7L 32-TSOP1-R KM681000CLP-7 KM681000CLT-7L KM681000CLG
Contextual Info: PRIORITY KM681000C Family CMOS SRAM Document Titie 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Pratt Date Remark 0.0 Initial draft November 22th 1995 Design target 0.1 First revision - Separate read and write at Icc, Icci Icc = Icci - * Read : 15mA, Write : 35mA

681000CLP

Abstract: P55n 681000C 2U27 0-00C M681000CL
Contextual Info: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated

Contextual Info: KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft Novem ber 22th 1995 Design target 0.1 First revision - Seperate read and write at Icc, Icci Icc = Ic c i -> Read : 15mA, Write : 35m A

km681000clg-7l

Abstract: KM681000CLP-7 KM681000CLT-5L KM681000CLP-7L KM681000CLG KM681000C
Contextual Info: KM681000C Family CMOS SRAM 128K x8 bit Low Power CMOS Static RAM FEATURES G ENERAL DESCRIPTION • Process Technology: Q.4ftm C M O S • Organization: 128Kx8 • Power Supply Voltage : Single 5.0V±1Q% • Low Data Retention Voltage : 2V Mln • three state output and TTL Compatible

KM681000CLP-7L

Abstract: KM681000CLT-5L km681000clg-5l km681000clg-7 KM681000C KM681000CL KM681000CLI KM681000CL-L KM681000CLP7L KM681000CLGI-7
Contextual Info: PRELIMINARY KM681000C Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Date Remark 0.0 Initial draft November 22, 1995 Design target 0.1 First revision - Seperate read and write at ICC, ICC1 ICC = ICC1 → Read : 15mA, Write : 35mA

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

schematic diagram tcon samsung

Abstract: mrc s5 h100 T-CON Schematic samsung polygon motor movement sensor pir cd 208 canon Inkjet head circuit NAND "read disturb" Samsung dyna image PHCR 359 600 dpi LED Print Head Spec
Contextual Info: 20-32-C65100-0599 USER'S MANUAL KS32C65100 32-Bit RISC Microprocessor Revision 0 KS32C65100 32-BIT RISC MICROPROCESSORS USER'S MANUAL Revision 0 Important Notice The information in this publication has been carefully checked and is believed to be entirely

gci 24V 12V

Abstract: Siemens diode SSi P22 240 schematic diagram samsung led GH 17 LS Voltage Regulator SOT-23-5 usb3 transceiver router board r52 hn AM22V10
Contextual Info: Am186TMCC/CH/CU Microcontroller Customer Development Platform User’s Manual Order #22002A Am186TMCC/CH/CU Microcontroller Customer Development Platform User’s Manual 1998 by Advanced Micro Devices, Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or

zener c53 hp

Abstract: C105 Diode zener 150v 1w RM73B3A C92 diode flyback samsung flyback transformer samsung BLM31P500SPB C81 diode R169
Contextual Info: Am186CC Customer Dev. Platform Main Board - Miscellaneous Revised: Tuesday, September 22, 1998 Revision: 2.0 (C) Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials September 22,1998

z5 smd zener diode code D5

Abstract: AT29C010-90ns a52 zener diode PMC-970285 "red led" 5mm 33164 A54 ZENER atmel 928 transistor WTs smd MC68HC16
Contextual Info: PM5342 SPECTRA-155 REFERENCE DESIGN REFERENCE DESIGN PMC-970285 ISSUE 1 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORK REFERENCE DESIGN SNOW BOARD PM5342 SPECTRA-155 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORKS REFERENCE DESIGN (SNOW BOARD) REFERENCE DESIGN

"yellow led" 5mm

Abstract: yellow led 5mm "red led" 5mm a39 zener diode HEADER 5X2 a88 zener mc68hc16 33164 atmel 928 smd diode B3E
Contextual Info: PM5342 SPECTRA-155 REFERENCE DESIGN REFERENCE DESIGN PMC-970285 ISSUE 1 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORK REFERENCE DESIGN SNOW BOARD PM5342 SPECTRA-155 SONET/SDH NODE OPTICAL INTERFACE FOR WAN NETWORKS REFERENCE DESIGN (SNOW BOARD) REFERENCE DESIGN

KM616V4002A

Abstract: 6161002 ER255 KM732V589
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Guide. 11 2. Ordering Inform ation. 15

LDR 6K

Abstract: program examples 29ee512 ARM JTAG Programmer Schematics 8250 uart sample c programs 1n4148b ldr 10k UART Program Examples ARM GIP12 inkjet print head driver
Contextual Info: PROGRAMMER’S GUIDE KS32C65100 32-Bit RISC Microcontroller Revision 1 TABLE OF CONTENTS Section 1 Using the ARM SDT for KS32C65100 Projects

C-4555

Abstract: c4555 32TSOP
Contextual Info: M E M O R Y ICs FUNCTION G UIDE 1. Low Power SRAM 5V Operation Density 256K 512K 1M Org. Product No' 32K x 3 64K x 3 128K x 8 6 4 K x 16 4M 512K x 8 Icc2/lsbl Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 C 45/55/70 70/100 70/20 28-TSOP(l) Reverse KM62256CLE

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

14270x

Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

diode zener c72

Abstract: 6x2 berg connector RM73B3A R268 zener c53 hp bc p28 diode TSOP48 YAMAICHI SOCKET R271 SMT M4 diode 150V ZENER 1W
Contextual Info: Am186CC Customer Dev. Platform Main Board - Miscellaneous Revised: Friday, February 05, 1999 Revision: 2.1 (C) Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials February 11,1999

BR1632 safety

Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

br1632 br1225

Contextual Info: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258