M28V841 Search Results

XX20H

Abstract: I01498 A19D A13D
Contextual Info: SGS-THOMSON M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PR ELIM IN A R Y DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S 0 4 4 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

IA15

Contextual Info: G 7. SGS-1H 0 MS 0 N M28V841 HQÊISOIlLiÊratôIRiOlgS LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH M EM O RY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSCJP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE

Contextual Info: SGS-THOMSON M28V841 l ll lM J i lL li M W I i e i LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

Contextual Info: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE

footprint so44

Contextual Info: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per

Contextual Info: M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per

footprint so44

Contextual Info: M28V841 LOW VOLTAGE 8 Megabit x 8, Sector Erase FLASH MEMORY DATA BRIEFING SMALL SIZE PLASTIC PACKAGES TSOP40 and SO44 MEMORY ERASE in SECTORS – 16 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 10,000 PROGRAM/ERASE CYCLES per

Contextual Info: 5 7 . SGS-1H0MS0N M28F841 M28V841 m CMOS 8 Megabit 1 Meg x 8,16 x 64K Sector Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 and S044 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver­ sions MEMORY ERASE in SECTORS, 16 x 64K

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

Contextual Info: M28V161 LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and SO44 MEMORY ERASE in SECTORS – 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per

Z3A19

Abstract: TSOP48 outline TSOP48 footprint
Contextual Info: $ 7 . S G S -1 H 0 N IS 0 N M28V161 • S M S it g liM Q t g i LOW VOLTAGE 16 Megabit (2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW ■ SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 ■ MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each ■ 3.3V ± 0.3V SUPPLY VOLTAGE

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

TSOP48 footprint

Abstract: footprint so44 A12E
Contextual Info: M28V161 LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY DATA BRIEFING MEMORY ERASE in SECTORS – 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE 100,000 PROGRAM/ERASE CYCLES per SECTOR PROGRAM/ERASE CONTROLLER

CDQ4

Contextual Info: 57. SGS-THOMSON M28V161 \u LOW VOLTAGE 16 Megabit 2 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW SMALL SIZE PLASTIC PACKAGES TSOP48 and S044 MEMORY ERASE in SECTORS - 32 Sectors of 64K Bytes each 3.3V ± 0.3V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

V8-41

Contextual Info: M28F841 M28V341 SGS-1H0MS0N m CMOS 8 Megabit 1 Meg x 8, 16 x 64K Sector Erase FLASH MEMORY ADVANCE DATA SMALL SIZE TSOP40 and S 0 4 4 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver­ sions M EMORY ERASE in SECTORS, 16 x 64K SUPPLY VOLTAGE in READ OPERATION

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W