M881 Search Results

an1171

Abstract: EES3 IC 7414 datasheet A128C AN1154 8031 MICROCONTROLLER 8031 pin diagram application note for checksum calculation eeprom PROGRAMMING tutorial motorola 68hc11 applications note
Contextual Info: AN1154 APPLICATION NOTE 8031 / M88 FLASH+PSD Design Tutorial This tutorial takes you step-by-step through the development cycle of a M88x3Fxx based design, from design entry, to programming the device. The first part of this tutorial shows how a M8813F1x can be used

lcd display 2x16

Abstract: lcd display 2x16 datasheet 2x16 lcd display display 2x16 nvram m48t35y-70pc1 STMicroelectronics date code format 32KX8 80C32 AN1259 M48T35
Contextual Info: AN1259 APPLICATION NOTE M8813F2Y FLASH+PSD and M48T35Y TIMEKEEPER Demonstration FLASH+PSD, from STMicroelectronics, is a family of Flash memory based programmable system devices PSDs for 8 bit micro-controllers. The M8813F2Y-90K1 is an 8-bit FLASH+PSD with 128Kx8 bit of

STMicroelectronics date code format

Abstract: nvram m48t35y-70pc1 This infinite loop gives the display the appearance M8813F2Y-90K1 32KX8 80C32 AN1259 M48T35 M48T35Y M48T35Y-70PC1
Contextual Info: AN1259 APPLICATION NOTE M8813F2Y FLASH+PSD and M48T35Y TIMEKEEPER Demonstration FLASH+PSD, from STMicroelectronics, is a family of Flash memory based programmable system devices PSDs for 8 bit micro-controllers. The M8813F2Y-90K1 is an 8-bit FLASH+PSD with 128Kx8 bit of

Intel 2118

Abstract: MB811B-10 DIP-16P-M01
Contextual Info: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad­ vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage

MN41464-15

Abstract: MT4067-12 MB81464-10 MN41256A-8 MN41464A-8 MT1259-15 MN41464A-10 mt1259-12 ms51464 MN41464-12
Contextual Info: 185 2 5 6 K 7, a m it £ z im m m CC TRAC max ns) TRCY •in (ns) r - i MOS "/ i - y D y n a m i c RAM (2 6 2 1 4 4 x 1 ) y f t -ft TCAD T A H nin nin (ns) (ns) TP sin (ns) m y min (ns) 1C TDH nin (ns) TRffC nin (ns) V D D or V C C (V) À B IDD nax (mA)

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

PSDSoft

Abstract: boot loader st file PSDPRO
Contextual Info: AN1178 APPLICATION NOTE 80C51 / M88 FLASH+PSD Design Guide The M88x3Fxx devices are members of ST’s M88 FLASH+PSD family of flash-based peripherals for use with embedded microcontrollers MCUs . These Programmable System Devices (PSDs) consist of memory, logic, and I/O. When coupled with a low-cost 80C51 MCU, the PSD forms a complete embedded

MB81C75-35

Abstract: MB81C75-25 MB81C75
Contextual Info: March 1990 Edition 3.0 ~ ~ — DATA S H E E T = cP FUJITSU - - MB81C75-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81C75 is a 16,384 words x 4 bits static random access memory

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: Ceramic ! NEW Frequency Mixer WIDE BAND Level 7 LO Power +7 dBm MCA1-12G 3800 to 12000 MHz Features • • • • • • • wide bandwidth, 3800 to 12000 MHz low conversion loss, 6.2 dB typ. high L-R isolation, 32 dB typ. IF, DC to 1800 MHz LTCC double balanced mixer

AN1153

Abstract: 8031 architecture AN1174 M8813F1Y M8813F2Y PLD eeprom programmer schematic KM68100 interfacing keyboard matrix with 8051 mcu AN1153 PSD
Contextual Info: AN1174 APPLICATION NOTE Using Members of the M88 FLASH+PSD Family To Minimize Signal Conditioning System Hardware The proliferation of inexpensive microcontrollers, DSPs and memory has fueled an explosive growth in hardware and systems that monitor and interface with the physical world. This physical world, which is

AD0-AD15

Abstract: AD10 AD11 AD12 AD14 PLCC52 PQFP52 M881 CPLD
Contextual Info: M88 FAMILY In-System Programmable ISP Multiple-Memory and Logic FLASH+PSD Systems (with CPLD) for MCUs DATA BRIEFING • ■ ■ ■ ■ ■ ■ ■ ■ ■ Single Supply Voltage: – 5 V±10% for M88xxFxY – 3 V (+20/–10%) for M88xxFxW 1 or 2 Mbit of Primary Flash Memory (8 uniform

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

bg5925._

Abstract: M8812 SAFEMASTER BG5925 BG5925 lichtschranke bg 5925 M738 M6610 M5784 DIN EN 954-1
Contextual Info: Sicherheitstechnik Lichtschranken - Schaltgerät BG 5925/900 safemaster A 0231242 • nach der EG-Richtlinie für Maschinen 98/37/EG • nach IEC/EN 60 204-1, EN 954-1 • für Lichtschranken mit symmetrischen oder asymmetrischen Ausgängen, Auswahl über Schalter S1

Contextual Info: Coaxial ! NEW ANNE-50X Termination 50Ω DC to 20 GHz Features • wideband coverage, DC to 20 GHz • return loss, 40 dB typ. up to 4 GHz and 30 dB typ. 10 to 20 GHz • rugged construction Applications • • • • CASE STYLE: LL561 CONNECTOR: SMA MALE

Contextual Info: Ceramic ! NEWMCA1-12GL Frequency Mixer WIDE BAND Level 4 LO Power +4 dBm 3800 to 12000 MHz Features • • • • • • wide bandwidth, 3800 to 12000 MHz high L-R isolation, 32 dB typ. IF, DC to 1500 MHz LTCC double balanced mixer low cost low profile, 0.08"

111-10

Contextual Info: High IP3 ! NEW Mixer/Amplifier Level 0 LO Power +0 dBm Maximum Ratings MAX-9H 810 to 930 MHz Features Operating Temperature • • • • • -40°C to 85°C Storage Temperature -55°C to 100°C LO Power 10 dBm RF Power 15 dBm Pin Connections low LO power, 0 dBm

Contextual Info: Ceramic ! NEW MCA1-85 Frequency Mixer WIDE BAND Level 7 LO Power +7 dBm 2800 to 8500 MHz Features • • • • • • • wide bandwidth, 2800 to 8500 MHz low conversion loss, 5.6 dB typ. high L-R isolation, 35 dB typ. IF, DC to 1250 MHz LTCC double balanced mixer

cd 332 m

Abstract: varistor NS 332 594 BC varistor 300 v 595 BC varistor 250 v 595 BC varistor 295 v 595 BC varistor 595 BC varistor varistor 332 420 v 595 BC varistor ns 332 varistor
Contextual Info: Metal Oxide Varistors Bussmann 3 2 Series to 5 3 Series - Large MOV’s W ith Tabs F o r A p p lic a tio n s In S e c o n d a ry S u rg e A rre s to rs Bussmann’s metal oxide surge absorbers are larger diameter versions of the conventional metal oxide varistor

Contextual Info: X線TDIカメラ C10650 シリーズ 高速読み出し 広域エリア 高解像度 高感度 を同時に実現！ 高解像度かつ明るく鮮明な画像取得を実現し インラインX線内部検査を実現したX線TDIカメラです。 高速 読 み 出 し

BTW58-1000R

Abstract: BTW58 M81 DIODE BTW58-1000 M0308 IEC134 M8814 Gate Turn-Off Thyristors 1500R
Contextual Info: Philips Components BTW58 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in T0-220AB envelopes capable o f being turned both on and o ff via the gate. They are suitable fo r use in high-frequency inverters, resonant power supplies, m otor control, horizontal

CY7B192-12

Abstract: CY7B192-15 IDT71282L-25 IDT71282L-35
Contextual Info: 117 — — 2 5 6 K m « £ iä m m CO X TAAC TCAC TOE •ax max ■ax ns (ns) (ns) CMOS S t a t i c RAM ( 6 5 5 3 6 X 4 ) A v + V '/ ft « TOH TOD ■in max (ns) (ns) TWP TDS ■in ■in (ns) (ns) TDH TWD T ’ VR min min (ns) (ns) ■ax (ns) V D D or V C C

BR216

Contextual Info: Philips Components br216 _ A _ DUAL ASYMMETRICAL BREAKOVER DIODE The BR 216 is a monolithic dual asymmetrical 65 V breakover diode in the T 0 -2 2 0 A B outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

Contextual Info: November 1989 Edition 1.1 FUJITSU DATASHEET MB81C4258-70/-80/-10/-12 CMOS 1,048,576 BIT STATIC COLUMN MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Static Column Mode Dynamic RAM The Fujitsu MB81C4258 is CMOS fully decocted dynamic RAM organized as 262,144 words x 4