MPQ2907 PNP Search Results

MPQ2907 PNP Result Highlights (5)

Part	Manufacturer	Description
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA2070	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini
TTA013	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.32 V / tf=65 ns / PW-Mini
TPCP8606	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PS-8
2SA1941	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-140 V / IC=-10 A / hFE=55~160 / VCE(sat)=-2.0 V / TO-3P(N)

MPQ2907 PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MPQ2907 pnp Abstract: ic base for 40 pin DIP ic MPQ2907 Contextual Info: MPQ2906 MPQ2907 PNP SILICON QUAD TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ2906, MPQ2907 types are comprised of four independent PNP silicon transistors mounted in a 14-pin DIP, designed for small signal, general purpose amplifier	Original	MPQ2906 MPQ2907 MPQ2906, 14-pin O-116 150mA, 150mA MPQ2907 pnp ic base for 40 pin DIP ic	PDF
MPQ2907 Abstract: MPQ2907A 1N916 MPQ2906 Contextual Info: MOTOROLA Order this document by MPQ2906/D SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors PNP Silicon 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MPQ2906 MPQ2907 MPQ2907A* *Motorola Preferred Device MAXIMUM RATINGS Symbol MPQ2906 MPQ2907 MPQ2907A Unit	Original	MPQ2906/D MPQ2906 MPQ2907 MPQ2907A* MPQ2907A MPQ2907 MPQ2907A 1N916 MPQ2906	PDF
MPQ2907 Abstract: d2905 MPQ2907A Contextual Info: MPQ2906 MPQ2907,A* M A X IM U M RATINGS S ym bol Rating MPQ2906 MPQ2907A MPQ2907 C ollector-E m itter Voltage VCEO Collector-Base Voltage VCBO Em itter-Base Voltage ^EBO - 5 .0 Vdc 'c -6 0 0 m Adc Collector C urrent — C ontinuous Total Device Dissipation	OCR Scan	MPQ2906 MPQ2907 MPQ2907A O-116 d2905	PDF
BC237 Abstract: msc2295 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors PNP Silicon 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MPQ2906 MPQ2907 MPQ2907A* *Motorola Preferred Device 14 MAXIMUM RATINGS 1 Symbol MPQ2906 MPQ2907 Collector – Emitter Voltage VCEO –40	Original	MPQ2906 MPQ2907 MPQ2907A* MPQ2907 MPQ2907A U218A MSC1621T1 MSC2404 MSD1819A BC237 msc2295	PDF
MPQ2907 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors ra Ep np rai Kp m m PNP Silicon LA J LA J PNP ivi rvi LU I l i LU W lU L il L il MPQ2906 MPQ2907 MPQ2907A* 'Motorola Preferred Device MAXIMUM RATINGS 1 Symbol MPQ2906 MPQ2907 Collector-Emitter Voltage	OCR Scan	MPQ2906 MPQ2907 MPQ2907A* MPQ2907 MPQ2907A O--116	PDF
National Pn2907 Abstract: 2907A 2N2907a national 2N2907 PN2907 MPQ2907 MMBT2907A MMBT2907 2N2907A Contextual Info: National Semiconductor MMBT2907 MMBT2907A PN2907 PN2907A 2N2907 2N2907A MPQ2907* C ° T O -1 16 TO- 9 2 T L /G /1 0 1 0 0 -7 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP General Purpose Amplifier Electrical Characteristics Ta	OCR Scan	MBT2907/MPQ2907/2N2907A/PN2907A/MMBT2907A PN2907 PN2907A MMBT2907 MMBT2907A MPQ2907* 2N2907 2N2907A MPQ2907 National Pn2907 2907A 2N2907a national MPQ2907 MMBT2907A MMBT2907 2N2907A	PDF
mp02907 Abstract: P0290 Contextual Info: MPQ2906 MPQ2907,A* M A X IM U M RATINGS Rating Symbol C o lle cto r-E m itte r Voltage M P 029 06 M PQ2907A MPQ2907 -4 0 VCEO -6 0 Vdc Vdc C ollector-B ase Voltage VCBO 60 Em itter-Base V o ltage vebo - 5 .0 Vdc <C -6 0 0 m A dc C o lle ctor C urrent — C ontinuous	OCR Scan	MPQ2906 MPQ2907 PQ2907A O-116 MPQ2907A mp02907 P0290	PDF
MPQ2907 Contextual Info: MOTOROLA SC 15E D \| b3b7g5M 0051571 5 \| XSTRS/R F MHQ2906 , MPQ2906 MPQ2907* MHQ2906 CASE 632-08, STYLE 1 TO-116 MPQ2906 MPQ2907 CASE 646-06, STYLE 1 TO-116 M A X IM U M R A T IN G S Sym bol V a lu e U n it Collector-Em itter V oltag e V C EO 40 Vdc C ollector-Base V olta g e	OCR Scan	MHQ2906 MPQ2906* MPQ2907* MHQ2906 O-116 MPQ2906 MPQ2907 O-116 MHQ2906, MPQ2906,	PDF
Contextual Info: CENTRAL SEMICONDUCTOR_ IWqbB D 3?-^ DODOBbb g M C E N *7 ’r € ris. €©»£?&! MPQ2906 MPQ2907 ' i€illi£0n{3yet0i,Corp. e&sitreii.- PNP SILICON QUAD TRANSISTOR semiconductor sor^. Central Semiconductor Corp. JEDEC TO-116 CASE 145 Adams Avenue	OCR Scan	MPQ2906 MPQ2907 O-116 MPQ2906, MPQ2907 MPQ2906) lc-10mA MPQ2907) 150mA	PDF
mpq2907 Abstract: 2907 TRANSISTOR PNP MPQ2907A Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors PNP Silicon L A J L A J PNP , r y i M PQ2906 M PQ2907 MPQ2907A* . . r y i ÜJ ÚJ L3J LU LLILSJ \|_Ll ‘ Motorola Preferred Device MAXIMUM RATINGS Symbol MPQ29Q6 MPQ2907 MPQ2907A Unit C ollector- Emitter Voltage	OCR Scan	PQ2906 PQ2907 MPQ2907A* MPQ29Q6 MPQ2907 MPQ2907A O-116 Charac00 GGT3243 mpq2907 2907 TRANSISTOR PNP MPQ2907A	PDF
2907A EQUIVALENT Abstract: MPQ2907A of ic 2907 MPQ2907 2N2906 2N2907 MPQ2906 MPQ2906A 2907A similar Contextual Info: QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose VHF amplifier applications. switching circuits and DC to o Maximum Power Dissipation @ TA = 25°C — MPQ2906, MPQ2907 PD = 1.25 wattS — MPQ2906A, MPQ2907A	Original	MPQ2906, MPQ2907 MPQ2906A, MPQ2907A 2N2906 2N2907 MP02906A 2907A EQUIVALENT MPQ2907A of ic 2907 MPQ2907 MPQ2906 MPQ2906A 2907A similar	PDF
MHQ2907 Abstract: MPQ2907 MHQ2906 A040 2N2906 2N2907 MPQ2906 MH02906 Contextual Info: MHQ2906, MHQ2907 SILICON MPQ2906, MPQ2907 QUAD DUAL-IN-LINE PNP SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS QUAD DUAL-IN-LINE PNP SILICON GENERAL-PURPOSE TRANSISTORS . . . designed for general-purpose switching circuits and OC to V H F am plifier applications.	OCR Scan	MHQ2906, MHQ2907 MPQ2906, 10/uAdc 2N2906 2N2907 O-116 MHQ2907 MPQ2907 MHQ2906 A040 2N2907 MPQ2906 MH02906	PDF
PQ2907 Abstract: 150PPS Contextual Info: MOTOROLA Order this document by MPQ2906/D SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors [i4i Fpp2i RTi r?öi ryi nn PNP Silicon L/vJ LAJ PNP rvn rvn LU LÂJ Lit [] lLi ijj LÌJ MPQ2906 MPQ2907 MPQ2907A ‘Motorola Preferred Device MAXIMUM RATINGS	OCR Scan	MPQ2906/D MPQ2906 MPQ2907 MPQ2907A* MPQ2907 MPQ2907A PQ2906 PQ2907 PQ2907A 150PPS	PDF
Contextual Info: MMPQ2907,A* CASE 751B-03, STYLE 1 SO-16 MAXIMUM RATINGS Rating C o llector-E m itter Voltage Symbol M MPQ2907 MMPQ2907A Unit VCEO -4 0 -6 0 Vdc Vdc Collector-Base Voltage VCB -6 0 Em itter-Base Voltage Veb - 5 .0 Vdc 'c -6 0 0 m Adc Collector C urrent — C ontinuous	OCR Scan	MMPQ2907 751B-03, SO-16 MPQ2907 MMPQ2907A	PDF

MPQ2907 Abstract: 2907 TRANSISTOR PNP MPQ2906 Contextual Info: IWñta CENTRAL SEMICONDUC TOR s@ritraf OQDGBbb / - 3 3 - Z kz ? . € rp. MPQ2906 MPQ2907 ce n tra l • S s it iie o iiä u c t o i1C o rp . e s n t r s ! .- ICEN . .•' sem i€@ B ifiyeter e o r ü . C e n t r a l S e m ic o n d u c t o r C o rp .	OCR Scan	mpq2906 MPQ2907 to-116 MPQ2906, MPQ2907 150mA, 300mA, MPQ2906) 2907 TRANSISTOR PNP	PDF
MPQ2907 Abstract: PQ2907 Contextual Info: MMPQ2907,A* CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating C o lle cto r-E m itte r V o ltage Symbol M M PQ2907 MMPQ2907A VCEO -4 0 -6 0 Unit , Vdc C ollector-B ase V o ltage VCB -6 0 Em itter-B ase V o ltage V£B - 5 .0 Vdc lC - 600 m A dc C o lle cto r C u rrent — C o ntinuous	OCR Scan	MMPQ2907 751B-05, SO-16 PQ2907 MMPQ2907A MPQ2907	PDF
Contextual Info: MO T O R O L A 6367254 SC -CXSTRS/R MOTOROLA SC F> Tb Î> Ë J b 3 t i 7 2 5 4 CXSTRS/R F DGÖE^S 96D 8 2 4 9 5 fl D T-«f 3 - S 5 M A X IM U M R ATIN G S MPQ1500 Symbol Value U nit Coilector-Emitter Voltage VCEO 20 Vdc Collector-Base Voltage VCBO 40 Vdc	OCR Scan	MPQ2907 C/W50	PDF
PIN CONFIGURATION 2N2222 Abstract: 2N2907 NPN Transistor 2N2222 PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053 Contextual Info: Quad Transistors* '^ 0 0 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0W atts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BV c b Q b v c e o b v e b o iCBO * ? v CBO (V) (V) 00 (nA) MIN MIN MIN MAX NFe @c <rr»A> (V) MIN VCE(SA r) 00 @c <mA) MAX c ob *T NF	OCR Scan	O-116 mpq2222 2N2222 mpq2369 2N2369 mpq2483 2N2483 mpq2484 2N2484 mpq2907 PIN CONFIGURATION 2N2222 2N2907 NPN Transistor PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053	PDF
SOIC-16 Abstract: MPQ2222 MPQ3724 SOIC16 C05 jj mp02907 MP03125 MMPQ2222 MMPQ2369 MMPQ3725 Contextual Info: L.ÛE D • bSOllBD □□3RSMQ 755 ■ NSC5 Multiple Bipolar Transistors— Quad NATL SEMICON] DISCRETE) - - . h F E !c V r.F Device Type (V) Min (A) Max Min r VcE(SAT) Cob mA MHz Min Max V U IU 5 w PF I q /> b ® C Config uration Package	OCR Scan	MMPQ6502 SOIC-16 MPQ6502 O-116 MMPQ67Ã MPQ67Ã MMPQ2369 SOIC-16 MPQ2222 MPQ3724 SOIC16 C05 jj mp02907 MP03125 MMPQ2222 MMPQ3725	PDF
mp02907 Abstract: small signal transistors MPQ2222 SGS-Thomson DIP14 DIP-14A B107 Contextual Info: GENERAL PURPOSE & INDUSTRIAL Æ 7 SGS-THOMSON Ä T# !1 0 » li[L IO T « S SMALL SIGNAL TRANSISTORS We have a range of small signal silicon transistors to cover a w ide variety of applications demanded by the industrial, instrum entation, telecom m unication as w ell as m ilitary and space markets.	OCR Scan	MPQ2222 DIP-14 MP02907 small signal transistors SGS-Thomson DIP14 DIP-14A B107	PDF
PIN CONFIGURATION 2N2222 Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX »f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob T NF *0 FF COMMENTS	OCR Scan	O-116 2N2222 MPQ2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6502 PIN CONFIGURATION 2N2222 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp	PDF
2N2222 pnp Abstract: 2X PNP TRANSistors PNP 2N3904 2N2222 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b O b v c e o b v e b o ICBO (V) (V) (V) <nA) MIN MIN MIN MAX @ v CBO hpE @ c (m A ) (V) MIN VC E (5AT) (V) lC <mA) MAX c ob r (pF) (MHz)	OCR Scan	O-116 mpq2222 2N2222 mpq2369 2N2369 mpq2483 2N2483 mpq2484 2N2484 mpq2907 2N2222 pnp 2X PNP TRANSistors PNP 2N3904 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip	PDF
PNP 2N3904 Abstract: 2N2222 2N2222 pnp 2N3906 Contextual Info: Quad Transistors* TO-116 Case 14PinDip Tc (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b o bvceo bvebo 00 00 00 (nA) 1m MIN MIN MAX 'CBO VCBO hFE vC E(SAt) • C (mA) w MIN (V) (mA) MAX ^ob r (PF) MAX Mm NF *OFF COMMENTS my	OCR Scan	O-116 14PinDip) MPQ2222 2N2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6100A PNP 2N3904 2N2222 2N2222 pnp 2N3906	PDF
2N3906 Abstract: 2N2222 hfe 2N3904 NPN dip Contextual Info: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) hFE (V) @ IC VCE (SAT ) @ IC (mA) (V) MIN (mA) MAX Cob fT (pF) (MHz) NF Typ † (dB) tOFF COMMENTS	Original	O-116 MPQ2222 MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907 MPQ2907A MPQ3467 MPQ3725 2N3906 2N2222 hfe 2N3904 NPN dip	PDF

MPQ2907 PNP Search Results

MPQ2907 PNP Result Highlights (5)

MPQ2907 PNP Datasheets Context Search

MPQ2907 pnp

MPQ2907

MPQ2907

BC237

MPQ2907

National Pn2907

mp02907

MPQ2907

mpq2907

2907A EQUIVALENT

MHQ2907

PQ2907

MPQ2907

MPQ2907

PIN CONFIGURATION 2N2222

SOIC-16

mp02907

PIN CONFIGURATION 2N2222

2N2222 pnp

PNP 2N3904

2N3906