SGR30 Search Results

CS thyristor

Abstract: Thyristor CS 165 SHR400 cs50n SG1500GXH25 SL3000GX22 2500v SHR400R22 reverse conducting thyristor 4500v
Contextual Info: Gate Turn-O ff Thyristors Anode Short Type Reverse Conducting Type Symmetrical Type -> Peak Off State Voltage 2500V 4500V Type No. SG800EX25* SG1400EX25" SGB00GXH25 SGR3000EX26 SG1500GXH25 SG3000GXH25 SGR3000GXH26 It q q m 800 1400 1500 3000 C2 C2 * underdevelopment

toshiba gto

Abstract: GTO 100A 500V gto 100A GTO thyristor SGR3000GXH26 300a 1500v thyristor 300a 1000v thyristor 100a 1000v GTO GTO thyristor 4500V 4000A
Contextual Info: TOSHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM —4500V Note 1 R.M.S On-State Current It (RMS)= 1200A (Tf = 77°C) R.M.S Reverse Current I r (RMS) —900A (Tf = 77°C)

sgr3000gxh28

Abstract: 4500V 900A
Contextual Info: TO SHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • Repetitive Peak Off-State Voltage : VDRM“ 4500V Note 1 • R.M.S On-State Current : lT(RMS) = 1200A(Tf=77°C) • R.M.S Reverse Current ; I r (RMS) —900A (Tf=77°C)

toshiba gto

Abstract: SGR3000GXH28 GTO thyristor 4500V 4000A GTO 100A 500V 4500V 900A 100a 1000v GTO GTO 10A 500V
Contextual Info: TOSHIBA SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 Unit in mm INVERTER APPLICATION • • • • • • • Repetitive Peak Off-State Voltage VDRM —4500V Note 1 R.M.S On-State Current lT ( R M S ) = 1200A(Tf=77°C)

SGRB000GXH26

Abstract: 4500V 900A GTO thyristor 4500V 4000A
Contextual Info: SEMICONDUCTOR TOSHIBA TECHNICAL DATA TOSHIBA GATE TURN-OFF THYRISTOR SGRB000GXH26 REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage V d RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C)

lrm200

Abstract: SGR3000EX26 GTO 3000A 2500V LS LRM2000-A SGR3000EX GTO 100A 500V
Contextual Info: TOSHIBA REVERSE CONDUCTING TYPE SGR3000EX26 Unit in mm PRELIMINARY í-¿3.5±02 Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 2500V Note 1. • R.M.S. On-State Current: IT (RMS) = 1400A (Tf=77°C) • R.M.S. Reverse Current: lT (RMS) = 1000A (Tf=77°C)

GTO 100A 500V

Contextual Info: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR SGR3000EX26 TnCUIDA • w w ■I I TECHNICAL DATA REVERSE CONDUCTING TYPE T E N T A T IV E D A T A SGR3000EX26 INVERTER APPLICATION U n it in mm 2-03.5 +0.2 • R ep etitive Peak Off-State Voltage : V;q r m = 2500V (Note. 1)

Contextual Info: TO SHIBA SGR3000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH26 Unit in mm INVERTER APPLICATION 2-03.5 + 0.2 Repetitive Peak Off-State Voltage V d RM = 4500V Note 1 l T ( R M S ) = 1200A(Tf=77°C) R.M.S On-State Current l R ( R M S ) = 900A(Tf=77°C)

Contextual Info: T O S H IB A SGR3000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR REVERSE CONDUCTING TYPE SGR3000GXH28 INVERTER APPLICATION • Unit in mm Repetitive Peak Off-State Voltage Vd r m = 4500V Note 1 R.M.S On-State Current lT(RMS) = 1200A(Tf=77°C) R.M.S Reverse Current

SGR3000EX26

Abstract: GTO 100A 500V
Contextual Info: TO SH IBA GATE T U R N - O F F THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SGR3000EX26 DATA REVERSE CONDUCTING TYPE TENTATIVE DATA SGR3000EX26 Unit in mm INVERTER APPLICATION • • • • • • Repetitive Peak Off-State Voltage : V d r m = 2500V (Note. 1)

toshiba gto

Abstract: sgr3000gxh26
Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR SGR3000GXH26 T n C U ID A • w w ■I I TECHNICAL DATA REVERSE CONDUCTING TYPE SGR3000GXH26 INVERTER APPLICATION U n it in mm 2-03,5+0.2 • R ep etitive Peak Off-State Voltage : Vd • R .M .S On-State C u rren t

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

MS480-2-1

Abstract: MS412 AB102-2-1 hl-004 MS518 st pl001 MS100-2-1 K7010 MS705-2 1B47
Contextual Info: Interface Opeterator Components 1- Electric Cabinet Locks MS100 Electrical Cabinet Locks Series Features Material:PA-66 body, cam m.s.zinc pl; Surface color :Black • StructureRod control lock, double bit insert, plastic dust cover, both left hand and right hand use, two-point

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

DIN 45326

Abstract: DIN 45322 DIN 41524 DIN 45329 DIN 45322 LUMBERG din 45321 male 12 lumberg DIN 45329 SGR60 SGR50 DIN 45326 MALE
Contextual Info: Die angegebenen Verpackungseinheiten VE gelten als Mindestabnahmemenge bei Lieferung ab Werk. i lumberg The package units (VE) being stated are automatically the lowest possible quantities being available ex works. Les livraisons d’usines ne peuvent être inférieures aux unités d ’emballage

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that