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    SOT 223 FAIRCHILD Search Results

    SOT 223 FAIRCHILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT 223 FAIRCHILD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQT13N60

    Abstract: No abstract text available
    Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    PDF OT-223 330cm FQT13N60

    F852 transistor

    Abstract: F852 CBVK741B019 F63TNR PN2222A
    Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    PDF OT-223 330cm 177cm F852 transistor F852 CBVK741B019 F63TNR PN2222A

    CBVK741B019

    Abstract: F63TNR F852 PN2222A corrugated box spec
    Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


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    PDF OT-223 F63TNR 330cm 177cm CBVK741B019 F852 PN2222A corrugated box spec

    sot-223 package dimensions

    Abstract: sot223 SOT223 Package sot223 weight sot 223 fairchild
    Text: SOT-223 Package Dimensions SOT-223 FS PKG Code 47 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 2000 Fairchild Semiconductor International September 1999, Rev. C


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    PDF OT-223 OT-223 sot-223 package dimensions sot223 SOT223 Package sot223 weight sot 223 fairchild

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


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    PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    Schottky Diode SOT-89

    Abstract: MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK
    Text: Competitive Part List Central Semiconductor Corp. 1. SOT-89 / SOT-223 Small Signal Transistors Our primary competition on the following devices is Philips, Siemens and Motorola. Competitor P/N BC868 BC869 BCP28 BCP29 BCP51, -10, -16 BCP52, -10, -16 BCP53, -10, -16


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    PDF OT-89 OT-223 BC868 BC869 BCP28 BCP29 BCP51, BCP52, BCP53, BCP54, Schottky Diode SOT-89 MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK

    MMBT3906

    Abstract: No abstract text available
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU

    PN2222A

    Abstract: fairchild 1P MMBT2222A PZT2222A PN2222 pn222
    Text: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223


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    PDF PN2222A MMBT2222A PZT2222A 500mA. MMBT2222A PN2222A OT-23 OT-223 fairchild 1P PZT2222A PN2222 pn222

    Untitled

    Abstract: No abstract text available
    Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U


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    PDF MPSA63 MMBTA63 PZTA63 MMBTA63 MPSA63 OT-23 OT-223

    Untitled

    Abstract: No abstract text available
    Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G


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    PDF MPSA06 MMBTA06 PZTA06 300mA. MMBTA06 MPSA06 OT-23 OT-223

    Untitled

    Abstract: No abstract text available
    Text: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifierand switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223


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    PDF PN2222A MMBT2222A PZT2222A 500mA. MMBT2222A PN2222A OT-23 OT-223

    2n3906

    Abstract: MMBT3906
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU

    SOT-23 EBC

    Abstract: MPSA63 MMBTA63 PZTA63 Fairchild Semiconductor - Process
    Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U


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    PDF MPSA63 MMBTA63 PZTA63 MMBTA63 MPSA63 OT-23 OT-223 SOT-23 EBC PZTA63 Fairchild Semiconductor - Process

    2MPSA06

    Abstract: MPSA06 NPN EBC SOT-23 MMBTA06 PZTA06 SOT-23 EBC B010100
    Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G


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    PDF MPSA06 MMBTA06 PZTA06 300mA. MMBTA06 MPSA06 OT-23 OT-223 2MPSA06 NPN EBC SOT-23 PZTA06 SOT-23 EBC B010100

    MC4044P

    Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
    Text: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation


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    PDF O-5/TO-52 O-220 O-252 O-263 OT-23 OT-223 302252CB 302228CB 25275CB 29372CB MC4044P 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p

    ic 3843 datasheet

    Abstract: ua 3843 MMBTA06 MPSA06 PZTA06
    Text: MPSA06 MMBTA06 PZTA06 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol


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    PDF MPSA06 MMBTA06 PZTA06 OT-23 OT-223 MPSA06 MMBTA06 ic 3843 datasheet ua 3843 PZTA06

    Mmbt3906

    Abstract: 2N3906
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223


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    PDF 2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU

    MPSa56 equivalent

    Abstract: MMBTA56 MPSA56 PZTA56 C-20-50
    Text: MPSA56 MMBTA56 PZTA56 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol


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    PDF MPSA56 MMBTA56 PZTA56 OT-23 OT-223 MPSA56 MMBTA56 MPSa56 equivalent PZTA56 C-20-50

    TRANSISTOR A64

    Abstract: a64 TRANSISTOR sot23 a64 MMBTA64 MPSA64 PZTA64 darlington sot23 pnp a64 sot
    Text: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol


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    PDF MPSA64 MMBTA64 PZTA64 OT-23 OT-223 MPSA64 MMBTA64 TRANSISTOR A64 a64 TRANSISTOR sot23 a64 PZTA64 darlington sot23 pnp a64 sot

    TRANSISTOR A63

    Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
    Text: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.


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    PDF MPSA63 MMBTA63 PZTA63 OT-23 OT-223 MPSA64 MPSA63 MMBTA63 TRANSISTOR A63 sot23 A63 a63 TRANSISTOR PZTA63

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package


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    PDF MMBT2222A PZT2222A 500mA. OT-23 OT-223 PZT2222A MMBT2222A OT-23

    Untitled

    Abstract: No abstract text available
    Text: MPSA28 / MMBTA28 / PZTA28 MPSA28 MMBTA28 PZTA28 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 3SS B E C NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.


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    PDF MPSA28 MMBTA28 PZTA28 MPSA28 MMBTA28 OT-23 OT-223

    Untitled

    Abstract: No abstract text available
    Text: PN2907A / MMBT2907A / PZT2907A PN2907A MMBT2907A PZT2907A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 2F E C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced


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    PDF PN2907A MMBT2907A PZT2907A PN2907A MMBT2907A OT-23 OT-223 -10mA

    P0210

    Abstract: 395n bf99 mpsa92 MPSA92 Fairchild
    Text: MPSA92 MMBTA92 SOT-23 PZTA92 V B SOT-223 M ark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol ia Parameter Value Units VcEO Collector-Emitter Voltage 300


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    PDF MPSA92 MMBTA92 PZTA92 MPSA92 MMBTA92 OT-23 OT-223 P0210 395n bf99 MPSA92 Fairchild