FQT13N60
Abstract: No abstract text available
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
330cm
FQT13N60
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F852 transistor
Abstract: F852 CBVK741B019 F63TNR PN2222A
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
330cm
177cm
F852 transistor
F852
CBVK741B019
F63TNR
PN2222A
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CBVK741B019
Abstract: F63TNR F852 PN2222A corrugated box spec
Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Antistatic Cover Tape SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated
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OT-223
F63TNR
330cm
177cm
CBVK741B019
F852
PN2222A
corrugated box spec
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sot-223 package dimensions
Abstract: sot223 SOT223 Package sot223 weight sot 223 fairchild
Text: SOT-223 Package Dimensions SOT-223 FS PKG Code 47 1:1 Scale 1:1 on letter size paper Part Weight per unit (gram): 0.1246 2000 Fairchild Semiconductor International September 1999, Rev. C
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OT-223
OT-223
sot-223 package dimensions
sot223
SOT223 Package
sot223 weight
sot 223 fairchild
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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Schottky Diode SOT-89
Abstract: MBRL130 MBRL140 BAT54S SOT-23 CMR1U-02M SOT-89 MBRL120 MURS120 SMA BCX53 Rohm DPAK
Text: Competitive Part List Central Semiconductor Corp. 1. SOT-89 / SOT-223 Small Signal Transistors Our primary competition on the following devices is Philips, Siemens and Motorola. Competitor P/N BC868 BC869 BCP28 BCP29 BCP51, -10, -16 BCP52, -10, -16 BCP53, -10, -16
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OT-89
OT-223
BC868
BC869
BCP28
BCP29
BCP51,
BCP52,
BCP53,
BCP54,
Schottky Diode SOT-89
MBRL130
MBRL140
BAT54S SOT-23
CMR1U-02M
SOT-89
MBRL120
MURS120 SMA
BCX53 Rohm
DPAK
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MMBT3906
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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PN2222A
Abstract: fairchild 1P MMBT2222A PZT2222A PN2222 pn222
Text: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223
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PN2222A
MMBT2222A
PZT2222A
500mA.
MMBT2222A
PN2222A
OT-23
OT-223
fairchild 1P
PZT2222A
PN2222
pn222
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Untitled
Abstract: No abstract text available
Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U
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MPSA63
MMBTA63
PZTA63
MMBTA63
MPSA63
OT-23
OT-223
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Untitled
Abstract: No abstract text available
Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G
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MPSA06
MMBTA06
PZTA06
300mA.
MMBTA06
MPSA06
OT-23
OT-223
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Untitled
Abstract: No abstract text available
Text: PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier Features • This device is for use as a medium power amplifierand switch requiring collector currents up to 500mA. • Sourced from process 19. MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 SOT-223
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PN2222A
MMBT2222A
PZT2222A
500mA.
MMBT2222A
PN2222A
OT-23
OT-223
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2n3906
Abstract: MMBT3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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SOT-23 EBC
Abstract: MPSA63 MMBTA63 PZTA63 Fairchild Semiconductor - Process
Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U
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MPSA63
MMBTA63
PZTA63
MMBTA63
MPSA63
OT-23
OT-223
SOT-23 EBC
PZTA63
Fairchild Semiconductor - Process
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2MPSA06
Abstract: MPSA06 NPN EBC SOT-23 MMBTA06 PZTA06 SOT-23 EBC B010100
Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G
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MPSA06
MMBTA06
PZTA06
300mA.
MMBTA06
MPSA06
OT-23
OT-223
2MPSA06
NPN EBC SOT-23
PZTA06
SOT-23 EBC
B010100
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MC4044P
Abstract: 7660CPA MC14411P 8038ccpd RC4151N ultrasonic proximity detector LM35CZ ICL7660SCPA 344C mc145151p
Text: Linear, Sensors & Digital Pots TO-5/TO-52 TO-92 TO-220 TO-252 TO-263 DD DIP Call us to see if you can save 10-20%. SOIC & SOP SOT-23 SOT-223 Manufacturer Cross Reference Table Manufacturer Analog Devices Anachip Code Manufacturer Code Manufacturer ADI Fairchild Semiconductor FSC Maxim Corporation
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O-5/TO-52
O-220
O-252
O-263
OT-23
OT-223
302252CB
302228CB
25275CB
29372CB
MC4044P
7660CPA
MC14411P
8038ccpd
RC4151N
ultrasonic proximity detector
LM35CZ
ICL7660SCPA
344C
mc145151p
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ic 3843 datasheet
Abstract: ua 3843 MMBTA06 MPSA06 PZTA06
Text: MPSA06 MMBTA06 PZTA06 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol
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MPSA06
MMBTA06
PZTA06
OT-23
OT-223
MPSA06
MMBTA06
ic 3843 datasheet
ua 3843
PZTA06
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Mmbt3906
Abstract: 2N3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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MPSa56 equivalent
Abstract: MMBTA56 MPSA56 PZTA56 C-20-50
Text: MPSA56 MMBTA56 PZTA56 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol
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MPSA56
MMBTA56
PZTA56
OT-23
OT-223
MPSA56
MMBTA56
MPSa56 equivalent
PZTA56
C-20-50
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TRANSISTOR A64
Abstract: a64 TRANSISTOR sot23 a64 MMBTA64 MPSA64 PZTA64 darlington sot23 pnp a64 sot
Text: MPSA64 MMBTA64 PZTA64 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol
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MPSA64
MMBTA64
PZTA64
OT-23
OT-223
MPSA64
MMBTA64
TRANSISTOR A64
a64 TRANSISTOR
sot23 a64
PZTA64
darlington sot23 pnp
a64 sot
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TRANSISTOR A63
Abstract: sot23 A63 a63 TRANSISTOR MPSA63 MMBTA63 MPSA64 PZTA63
Text: MPSA63 MMBTA63 PZTA63 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2U PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
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MPSA63
MMBTA63
PZTA63
OT-23
OT-223
MPSA64
MPSA63
MMBTA63
TRANSISTOR A63
sot23 A63
a63 TRANSISTOR
PZTA63
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Untitled
Abstract: No abstract text available
Text: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package
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MMBT2222A
PZT2222A
500mA.
OT-23
OT-223
PZT2222A
MMBT2222A
OT-23
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Untitled
Abstract: No abstract text available
Text: MPSA28 / MMBTA28 / PZTA28 MPSA28 MMBTA28 PZTA28 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 3SS B E C NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.
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MPSA28
MMBTA28
PZTA28
MPSA28
MMBTA28
OT-23
OT-223
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Untitled
Abstract: No abstract text available
Text: PN2907A / MMBT2907A / PZT2907A PN2907A MMBT2907A PZT2907A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 2F E C PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced
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PN2907A
MMBT2907A
PZT2907A
PN2907A
MMBT2907A
OT-23
OT-223
-10mA
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P0210
Abstract: 395n bf99 mpsa92 MPSA92 Fairchild
Text: MPSA92 MMBTA92 SOT-23 PZTA92 V B SOT-223 M ark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol ia Parameter Value Units VcEO Collector-Emitter Voltage 300
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OCR Scan
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MPSA92
MMBTA92
PZTA92
MPSA92
MMBTA92
OT-23
OT-223
P0210
395n
bf99
MPSA92 Fairchild
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