bc847b mark
Abstract: BC847b fAIRCHILD 847C BC846 BC846A BC846B BC847 BC847A BC847B BC847C
Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.
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BC847A
BC847B
BC847C
OT-23
BC846A
BC846B
BC847A
BC847B
BC846A
bc847b mark
BC847b fAIRCHILD
847C
BC846
BC847
BC847C
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FAIRCHILD SOT-23 MARK 1a
Abstract: BC846 SOT23 NPN sot23 mark NF 847C BC846 BC846A BC846B BC847 BC847A fAIRCHILD BC847b
Text: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.
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BC847A
BC847B
BC847C
OT-23
BC846A
BC846B
BC847A
BC847B
BC846A
FAIRCHILD SOT-23 MARK 1a
BC846 SOT23
NPN sot23 mark NF
847C
BC846
BC847
fAIRCHILD BC847b
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Untitled
Abstract: No abstract text available
Text: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings
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MMBT3646
OT-23
OT-23
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MMBT2907A
Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A SOIC-16
Text: PN2907A MMBT2907A PZT2907A C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .2B PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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PN2907A
MMBT2907A
PZT2907A
OT-23
OT-223
NMT2907
MMPQ2907
SOIC-16
MMBT2907A
MMPQ2907
NMT2907
PN2907A
PZT2907A
SOIC-16
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IC 7403
Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch
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MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
SOIC-16
NMT2222
IC 7403
MMPQ2222
PZT2222A
SOIC-16
MMBT2222A
NMT2222
PN2222A
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MMBT3646
Abstract: No abstract text available
Text: MMBT3646 MMBT3646 Switching Transistor 3 2 SOT-23 Mark: 23 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 15 Units V VCES Collector-Emitter Voltage 40 V VCBO
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MMBT3646
OT-23
MMBT3646
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Untitled
Abstract: No abstract text available
Text: MMBT3904 PZT3904 C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
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2N3904
MMBT3904
PZT3904
2N3904
MMBT3904
OT-23
OT-223
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2MPSA06
Abstract: MPSA06 NPN EBC SOT-23 MMBTA06 PZTA06 SOT-23 EBC B010100
Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G
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MPSA06
MMBTA06
PZTA06
300mA.
MMBTA06
MPSA06
OT-23
OT-223
2MPSA06
NPN EBC SOT-23
PZTA06
SOT-23 EBC
B010100
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Untitled
Abstract: No abstract text available
Text: MMBTA92 / PZTA92 PNP High-Voltage Amplifier Description This device is designed for high-voltage driver applications. Sourced from process 76. C C E E SOT-23 Mark: 2D C SOT-223 B Figure 1. MMBTA92 Device Package B Figure 2. PZTA92 Device Package Ordering Information
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MMBTA92
PZTA92
OT-23
OT-223
PZTA92
MMBTA92
OT-23
OT-223
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MMBT3906
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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Untitled
Abstract: No abstract text available
Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U
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MPSA63
MMBTA63
PZTA63
MMBTA63
MPSA63
OT-23
OT-223
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Untitled
Abstract: No abstract text available
Text: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G
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MPSA06
MMBTA06
PZTA06
300mA.
MMBTA06
MPSA06
OT-23
OT-223
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2n3906
Abstract: MMBT3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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SOT-23 EBC
Abstract: MPSA63 MMBTA63 PZTA63 Fairchild Semiconductor - Process
Text: MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor Features • This device is designed for applications requiring extremely high current gain at currents to 800 mA. • Sourced from Process 61. MMBTA63 MPSA63 PZTA63 C C E E TO-92 SOT-23 SOT-223 B Mark:2U
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MPSA63
MMBTA63
PZTA63
MMBTA63
MPSA63
OT-23
OT-223
SOT-23 EBC
PZTA63
Fairchild Semiconductor - Process
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Mmbt3906
Abstract: 2N3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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2N3906
Abstract: 2N3906 die 2N3906 fairchild die 728p MMBT3906 MMPQ3906 PZT3906
Text: 2N3906 / MMBT3906 / PZT3906 2N3906 MMBT3906 C E C B TO-92 B SOT-23 E Mark: 2A PZT3906 C E C B SOT-223 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Sourced
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906 die
2N3906 fairchild die
728p
MMPQ3906
PZT3906
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CBVK741B019
Abstract: F63TNR MMBTA13 MPSA13 MPSA14 PN2222N PZTA13
Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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MMBTA13
PZTA13
OT-23
OT-223
MPSA14
CBVK741B019
F63TNR
MMBTA13
MPSA13
PN2222N
PZTA13
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pnp transistor bel 188
Abstract: AMPSA92 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 tc 144 e SOT-23 2D
Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units
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MMBTA92
PZTA92
OT-23
OT-223
pnp transistor bel 188
AMPSA92
CBVK741B019
F63TNR
MMBTA92
MPSA92
PN2222N
PZTA92
tc 144 e
SOT-23 2D
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sot 223 fairchild
Abstract: sot-23 15V vebo pnp CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D Fairchild MPSA92
Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MMBTA92
PZTA92
OT-23
OT-223
sot 223 fairchild
sot-23 15V vebo pnp
CBVK741B019
F63TNR
MMBTA92
MPSA92
PN2222N
PZTA92
SOT-23 2D
Fairchild MPSA92
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Untitled
Abstract: No abstract text available
Text: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package
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MMBT2222A
PZT2222A
500mA.
OT-23
OT-223
PZT2222A
MMBT2222A
OT-23
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transistor bel 100
Abstract: bel 188 transistor CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol
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MMBTA14
PZTA14
OT-23
OT-223
transistor bel 100
bel 188 transistor
CBVK741B019
F63TNR
MMBTA14
MPSA14
PN2222N
PZTA14
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MPSA13
Abstract: equivalent mpsa14 MMBTA13 MPSA14 PZTA13
Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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MMBTA13
PZTA13
OT-23
OT-223
MPSA14
MPSA13
equivalent mpsa14
MMBTA13
PZTA13
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bel 188 transistor
Abstract: CBVK741B019 F63TNR MMBTA14 MPSA14 PN2222N PZTA14
Text: MMBTA14 PZTA14 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol
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MMBTA14
PZTA14
OT-23
OT-223
bel 188 transistor
CBVK741B019
F63TNR
MMBTA14
MPSA14
PN2222N
PZTA14
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bel 188 transistor
Abstract: MPSA92 FAIRCHILD SEMICONDUCTOR TR516 CBVK741B019 F63TNR MMBTA92 MPSA92 PN2222N PZTA92 SOT-23 2D
Text: MMBTA92 PZTA92 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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MMBTA92
PZTA92
OT-23
OT-223
bel 188 transistor
MPSA92 FAIRCHILD SEMICONDUCTOR
TR516
CBVK741B019
F63TNR
MMBTA92
MPSA92
PN2222N
PZTA92
SOT-23 2D
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