ST2416 Search Results

ST24164

Abstract: ST25164 b2416 MSO8
Contextual Info: ST24164 ST25164 16Kb x8 SERIAL EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

ST24164

Abstract: AN404 M24164 ST25164 ST2416
Contextual Info: ST24164 ST25164 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

ST24164

Abstract: AN404 ST24 ST25 ST25164
Contextual Info: r z T S G S -T H O M S O N ST24164 * 7 #» E » l g » IlL iO T ( ò K ! lD ( g i ST25164 SERIAL ACCESS 16K (2K x 8) EEPROM • 1 MILLION ERASE/W RiTE CYCLES with OVER 10 YEA RS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version

MDAB

Abstract: 24164s
Contextual Info: /= T ^7# S T 24164 ST25164 S G S -T H O M S O N [* ^ Q [i[L i(§ ¥ ^ @ [* S SERIAL ACCESS CMOS 16K (2048 x 8) EEPROMs • MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION « SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24164 version

Contextual Info: ST24164 ST25164 SGS-THOMSON HDM [iL[i g»Kl S 16Kb (x8) SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V tor ST24164 version - 2.5V to 5.5V tor ST25164 version ■ HARDWARE WRITE CONTROL PIN

Contextual Info: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

Contextual Info: / T T S G S -T H O M S O N ^ 7 # . M O lM ilL IIM S IM K g i ST24164 S T25164 SERIAL 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

Contextual Info: rZ J * 7 # . ST24164 ST25164 S G S -T H O M S O N H D W lllL iM S ia ig i SERIAL ACCESS 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRiTE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

AN404

Abstract: ST24164 ST25164
Contextual Info: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

ST24164

Abstract: FZJ 165 AN404 ST24 ST25 ST25164
Contextual Info: rz y ^ / # ST24164 ST25164 S G S -T H O M S O N K iilD g lS ilL E © T K ( B R !lD ( g S SERIAL 16K (2K x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

Contextual Info: SGS-THOMSON ^ 7 # ST24164 ST25164 K!ilD S lllLI©DTW!lll©i 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version

ST24164

Contextual Info: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

ST24C02

Abstract: ST24C08 m24c02 ST24W02 equivalent AN995 ST24C01 ST24C04 ST24W01 M24C32-W ST24W04
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01

Contextual Info: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

Replacement for

Abstract: AN995 ST24W01 ST24C01 ST24C02 ST24C04 ST24C08 ST24W02 ST24W04 ST24W08
Contextual Info: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01

TOP SIDE MARKING M27C512

Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Contextual Info: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

misplaced Wire Bonds

Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Contextual Info: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

ST24C16

Abstract: AN995 ST24C01 ST24C02 ST24C04 ST24C08 ST24W01 ST24W02 ST24W04 ST24W08
Contextual Info: AN995 APPLICATION NOTE Replacing ST24xxx and ST25xxx by M24xxx Devices This document is written for users of the following ranges of EEPROM device: Table 1. Discontinued Ranges Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01 ST25C01 ST25W01 ST24C02 ST24W02

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .