TO61 PACKAGE Search Results

2N3016

Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017
Contextual Info: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418

2N2891

Abstract: 2N3016 2N3419
Contextual Info: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued D evice No Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX

2N2611

Abstract: 2N8674 2N5675 2N2812 2N2813 2N4070 2N4071 2N4301 2N5218 2N5313
Contextual Info: SûUARE î> C O / GENERAL “ ^ 3 9 1 8 5 9 0 G EN E R A L SE M IC O N D U C T O R _ ' $ ÖS2SS0Ö 95D 02094 D T -J 3 -// le = 10 A M P S / ‘ BVceo PACKAGE VOLTS «CEV VOLTS b v eb0 2N2611 TO-61 60 2N2812 TO-61 60 2N2813

KT827B

Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780

2u 62 diode

Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

Contextual Info: r le = 10 AMPS DEVICE TYPE VOLTS PD @ 100°C WATTS hFE@ lc Min. Max. AMPS PACKAGE 2N2811 2N2812 2N2813 2N2814 TO-61 TO-61 TO-61 TO-61 80 80 120 120 8.0 8.0 8.0 8.0 40.0 40.0 40.0 40.0 2040 20 40 - 60 120 60 120 2N4070 2N4071 2N4301 2N5218 2N5288 2N5289 100

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
Contextual Info: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)

2SA1106 SANKEN

Abstract: TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE fT ON) Min (Hz) ICBO *ON r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . -10 -15 20 . .

DTS517

Abstract: BUV28A
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

BDY96

Abstract: DTS519 60M6 2n2114 IR519
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40

NSP5665

Abstract: sat 1205
Contextual Info: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *

2N2632

Contextual Info: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60

Contextual Info: Ic = 7.0 AMPS DEVICE TYPE PACKAGE 2N3878 2N3879 2N5346 2N5347 2N5348 BVCbo VOLTS BVebo VOLTS P0 @ 100°C WATTS h FE @ VcE Min. Max. AMPS VOLTS TO-66 50 TO-66 75 TO-59/lso 80 TO-59/lso 80 TO-59/lso 100 120 120 80 80 100 7.0 7.0 6.0 6.0 6.0 20.0 20.0 34.0 34.0

LT049

Abstract: LT042 LT041 SDT13305 sgsf465 BUT56A BUT56 ET403 NPN sdt13304 ks03
Contextual Info: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (HZ) r ICBO Max (A) Max (s) (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . .10 . . .15 . .

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

Contextual Info: Microsemi NPN Transistors Part Number NPN 2N3491 2N3489 2N3492 2N5854 2N7368 2N5622 2N5624 2N5626 2N5288 2N5289 2N5628 2N1724 2N6128 2N6S10 2N6511 2N6512 2N6514 2N6513 2N5241 2N6544 2N1902 2N1904 2N6S61 2N6S82 2N6584 2N6S85 2N6588 2N6580 2N6583 2N6586 2N6S89

2n5347

Abstract: a/TO111 2n5100
Contextual Info: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T | a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0

KT827A

Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175

Contextual Info: Microsemi 2N5468 2N5469 2N2811 2N2812 2N2813 2N 2814 2N6495 2N4231 2N4232A 2N4233 2N4233A 2N1487 2N1489 2N1702 2N1488 2N1490 2N6043 2N 6044 2N6045 2N6486 2N6487 2N6488 2N5731 2N5732 2N1209 2N1212 NPN ; 2N5970 2N4301 2N5264 2N7142 2N7143 2N5067 2N5068 2N5069

SKC10C75

Abstract: SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type >c Max V BR CEO (A) Of) PD Max hFE fT ON) Min (Hz) ICBO t0N r (CE)sat Toper Max Max (A) (8) Max (Ohms) Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40 45

MIL I 23659

Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
Contextual Info: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B

2SD556 sanken

Abstract: SDT9207 SM2176 2sd556 KT819G SDT9202 Bd184 SDT9803 KT818G 2N3055-7
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE Of) PD Max toN Max (A) (s) ICBO Max hFE »T ON) Min (Hz) r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . . 5 . . . .10 . . . .15

KT8278

Abstract: KT827V SK3561 sd333 KT827
Contextual Info: POWER SILICON NPN Item Number Part Number I C -5 -10 15 - 20 25 30 ~~~~~~1 2N5039 2N5537 2N5538 S2N5539-8 SML8003 SML8013 SML8016 SML8071 SPC163-08 163-08A 163-08SPC 163-08 163-08 2N5303 807458 807458 ~¥~:~: 35 40 STC1726 2N4211 SOT8013 SOT8013 SOT8013 SOT8157