TSOP04 Search Results

TSOP044-P-0400-3

Abstract: TSOP044-P0400
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 44 PIN PLASTIC To Top / Package Lineup / Package Index FPT-44P-M09 EIAJ code : TSOP044-P-0400-3 44-pin plastic TSOP II Lead pitch 0.80 mm Package width 10.16 mm Lead shape Gullwing Lead bend direction

TSOP044-P-0400-1

Abstract: MAX4435
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 44 PIN PLASTIC To Top / Package Lineup / Package Index FPT-44P-M07 EIAJ code : TSOP044-P-0400-1 44-pin plastic TSOP II Lead pitch 0.80 mm Package width 10.16 mm Lead shape Gullwing Lead bend direction

package 1218

Abstract: TSOP048-P-1218-1
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 48 PIN PLASTIC FPT-48P-M07 EIAJ code : TSOP048-P-1218-1 Lead pitch 0.50mm Lead shape Gullwing Lead bend direction Normal bend Sealing method Plastic mold 48-pin plastic TSOP I (FPT-48P-M07) 48-pin plastic TSOP (I) (FPT-48P-M07)

1020

Abstract: transistor 1020 TSOP040-P-1020
Contextual Info: 40RTSOP TSOP040-P-1020 1 40 0.50 TYP. 10.20 9.80 0.25 0.15 21 20 1.10 0.90 SEE DETAIL 1.19 MAX. 0.49 0.39 DETAIL 0.125 18.60 18.20 19.30 18.70 20.30 19.70 NOTE: Dimensions in mm MAXIMUM LIMIT MINIMUM LIMIT 0.22 0.02 0° - 10° 0.49 0.39 0.18 0.08 40RTSOP

TSOP044-P-0400-3

Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 44 PIN PLASTIC FPT-44P-M09 EIAJ code : TSOP044-P-0400-3 44-pin plastic TSOP II Lead pitch 0.80mm Package width 10.16mm Lead shape Gullwing Lead bend direction Normal bend Sealing method Plastic mold (FPT-44P-M09) 44-pin plastic TSOP (II)

TSOP048-P-1218-1

Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 48 PIN PLASTIC To Top / Package Lineup / Package Index FPT-48P-M07 EIAJ code : TSOP048-P-1218-1 48-pin plastic TSOP I Lead pitch 0.50 mm Lead shape Gullwing Lead bend direction Normal bend

TSOP044-P-0400-1

Abstract: MAX4435
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 44 PIN PLASTIC FPT-44P-M07 EIAJ code : TSOP044-P-0400-1 Lead pitch 0.80mm Package width 10.16mm Lead shape Gullwing Lead bend direction Normal bend Sealing method Plastic mold 44-pin plastic TSOP II (FPT-44P-M07) 44-pin plastic TSOP (II)

TSOP044-P-0400-1

Abstract: TSOP04 MAX4435 FPT-44P-M07
Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 44 PIN PLASTIC FPT-44P-M07 EIAJ code : TSOP044-P-0400-1 44-pin plastic TSOP II Lead pitch 0.80 mm Package width 10.16 mm Lead shape Gullwing Lead bend direction Normal bend Sealing method

48-PIN

Abstract: A12C A15C LH532000B-1
Contextual Info: LH532000B-1 FEATURES CMOS 2M 256K x 8/128K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW f . 1• 2 a 7[= O E i/Ô Ë ^D C C

48-PIN

Abstract: A10C A12C A15C LH532000B
Contextual Info: LH532000B FEATURES CMOS 2M 256K x 8/128K x 16 M ask-Program m able ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VI EW f 1• \ 40 ZI Ag a 7C 2 39 U Ag AgiZ

LHMN5

Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Contextual Info: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word

LH28F160BGH-TL

Abstract: LH28F160BG-TL TSOP048-P-1220
Contextual Info: LH28F160BG-TL/BGH-TL LH28F160BG-TL/BGH-TL 16 M-bit 1 MB x 16 Smart 3 Flash Memories DESCRIPTION Y R A L FEATURES • Enhanced automated suspend options – Word write suspend to read – Block erase suspend to word write – Block erase suspend to read • SRAM-compatible write interface

Contextual Info: LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL LH28F008SC-T/SCH-T LH28F008SC-TL/SCH-TL 8 M-bit 1 MB x 8 Smart 3 Flash Memories DESCRIPTION The LH28F008SC-T/SCH-T/SC-TL/SCH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a

Contextual Info: LH53V8000 FEATURES C M O S 8 M 1 M x 8 / 5 1 2 K x 16 3 V - D r iv e M a s k - P r o g r a m m a b le R O M PIN CONNECTIONS • 1,048,576 words x 8 bit organization (Byte mode) 42-PIN DIP TOP VIEW r A-ie C 1« Ai? C 2 524,288 words x 16 bit organization

SCH-85

Abstract: LH28F008SC TSOP040-P-1020
Contextual Info: SHARP LH28F008SC/SCH, LH28F008SC-L/SCH-L LH28F008SC/SCH LH28F008SC-L/SCH-L 8 M-bit 1 MB x 8 SmartVoltage Flash Memories DESCRIPTION • Enhanced automated suspend options The LH28F008SC/SCH/SC-L7SCH-L flash memories with SmartVoltage technology are high-density, low-

44-PIN

Abstract: 48-PIN LH5332600
Contextual Info: LH5332600 FEATURES • 4,194,304 x 8 bit organization Byte mode: BYTE = VIL 2,097,152 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 100 ns (MAX.) CMOS 32M (4M × 8/2M × 16) MROM PIN CONNECTIONS 44-PIN SOP TOP VIEW NC 1 44 A20 A18 2 43

A-1435

Contextual Info: • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 (iW (MAX.) • Static operation • Three-state outputs • Low power supply: 2.7 V to 3.6 V

Contextual Info: LH53V16500 FEATURES PIN CONNECTIONS • 2,097,152 words x 8 bit organization Byte mode 1,048,576 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 CMOS 16M (2M x 8/1M x 16)

LH534B00

Abstract: LH534B00T TSOP040-P-1020
Contextual Info: LH534B00 FEATURES CMOS 4M 512K x 8 MROM PIN CONNECTIONS • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Power consumption: Operating: 330 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O • Three-state outputs

Contextual Info: LH28F004SC-L/SCH-L SHARP LH28F004SC-L/SCH-L CONTENTS FEATURES. 75 COMPARISON TAB LE.75 PIN CONNECTIONS. 76

ScansU9X24

Contextual Info: SHARP LH28F008SC-T/SCH-T, LH28F008SC-TUSCH-TL LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL CONTENTS DESCRIPTION. 245 COMPARISON TABLE. 246

LC124

Contextual Info: LH28F004SU-LC FEATURES 4M 512K x 8 Flash Memory 40-PIN TSOP • 512K x 8 Word Configuration TOP VIEW S • 5 V Write/Erase Operation (5 VN/pp, 3.3 V Vc c ) - No Requirement for DC/DC Converter to Write/Erase A-I6 C 1• \ 40 Z I a 17 A-I5 C 2 39 □ A14 IZ

MN41V17405BTT

Abstract: TSOP050-P MN4SV17160T MN4SV17 MN4SV17160T-A
Contextual Info: MOS Memories •Dynamic RAMs # 16M DRAMs 3.3V version Organization (words Xbits) 4M X4 1M X 16 Type No. Access time Cycle time Refresh max (ns) min (ns) (cycles/ms) Maximum Supply Current CBR self Active refresh (mA) (/*A) Package No. Remarks MN41V17400BTT

42-PIN

Abstract: 44-PIN 48-PIN 42PIN
Contextual Info: CMOS 8M 1M x 8/512K × 16 Mask-Programmable ROM LH538500C FEATURES • 1,048,576 words × 8 bit organization (Byte mode) 524,288 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)