23C8100 Search Results

Contextual Info: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The 23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|

NA-1335

Abstract: 42-pin D GM23C8100A
Contextual Info: 23C8100A GoldStar GOLDSTAR ELECTRON CO., LTD. 1M x 8/512K x 16 BIT CMOS MASK ROM Description Pin Configuration The GM 23C8100A high performance read only memory is organized either as 1 ,0 4 8 ,5 7 6 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)

23c8100

Abstract: MX23C8100 MX23C8100MC-10 MX23C8100MC-12 MX23C8100MC-15 MX23C8100PC-10 MX23C8100PC-12 MX23C8100PC-15 MX23C8100TC-10 MX23C8100TC-12
Contextual Info: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%

Contextual Info: W» LG Semicon. Co. LTD Description Pin Configuration The 23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The 23C8100A offers automatic power down controlled by

GM23C8100BFW

Abstract: 23C8100B
Contextual Info: @ LG Semicon. Co. LTD Description The 23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The 23C8100B offers automatic power down controlled by the mask

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

23C8100DG

Contextual Info: 23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption

Contextual Info: M X23C81OO MACftONIX, INC. 8 M - B I T 1 M C x M 8 O / 5 S 1 M S A K S K x R 1 8 O M FEATURES • • • • • Switchable configuration -1 M x 8(byte mode) - 512K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns (max)

Contextual Info: KM23C81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption

atmel 844

Abstract: 61256 GMS960800B atmel dream sam9713 SRAM 61256 dream sam9713 roland 13X2 la 7632 GMS970800B
Contextual Info: Features • The SAM9713GS Board provides: 1 – – – – High Quality Wavetable Synthesis with 38 Voice Polyphony Compatible Reverb and Chorus Surround Four Band Equalizer Description The SAM9713GS Board demonstrates a typical application of the SAM9713. This is a

61256

Abstract: atmel 844 13X2 1N4148 ATSAM9713 GMS960800B GMS970800B PCM1718E la 7632
Contextual Info: Features • The ATSAM9713GS Board provides: 1 – – – – High Quality Wavetable Synthesis with 38 Voice Polyphony Compatible Reverb and Chorus Surround Four Band Equalizer Description The ATSAM9713GS Board demonstrates a typical application of the ATSAM9713.

Contextual Info: MXIC M X 2 3 C 8 10 0 8M -B rm M x 8 / 5 1 2 K x 1 6 ] CMOS MASK ROM FEATURES • Switchable configuration - 1 M x 8 byte mode - 512K x 16(word mode) • Single +5V power supply • Fast access time: 100/120/150/200ns (max) • Totally static operation •

23C8001A

Abstract: 23C8001 KM23C2001 2001h 23c4001
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28

Contextual Info: CMOS MASK ROM 23C8100FP2 8M-BH 1M X 8 /5 1 2K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: SAMSUNG ELECTRONICS INC 4EE D B 7^4142 23C8100 GDlllb? 3 B S M 6 K CMOS MASK ROM 8M-Bit 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)

Contextual Info: 23C8100 MXIC 8M-Bit Mask ROM 8/16 Bit Output FEATURES ORDER INFORMATION Part No. Access Time Package 23C8100MC-10 100ns 44 pin SOP 23C8100MC-12 120ns 44 pin SOP 23C8100MC-15 150ns 44 pin SOP 23C8100PC-10 100ns 42 pin DIP Standby: 50nA 23C8100PC-12

Contextual Info: MACRONIX IN C 5 3 E ]> ¿ b a a a a e □ □ a 3 t.fi h s i • P1ACX f j - i s - IV l JC „ M X23 C 8 10 0 M ACPO NIX, INC. B M a r n i M x b / b i c k x is CMOS MASK ROM FEATURES • Switchable configuration - 1Mx8 byte mode) - 512K x 16(word mode) • Single +5V power supply

Contextual Info: 23C8100A LG Semicon Co.,Ltd. IM x 8 / 512K x 16 B IT C M O S M A SK R O M Pin Configuration Description The G M 28C 8100A high perform ance read only m em ory is organized as 1,048,576 x 8 bit Byte M ode o r as 524,288 x 16 bit (W ord M ode) follow ed by B H E m ode select. The

Contextual Info: SAM S UN G E L E C T R O N I C S INC 45E 1 7^4142 23C8100FP1 0011171 S CMOS MASK ROM ÒM-Bit 1M X 8 / 5 1 2 K X 16) CMOS MASK ROM FEATURES S witchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) Fast access time: 150ns (max.) Supply voltage: single + 5V

Contextual Info: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)

Contextual Info: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

61256

Abstract: SRAM 61256 dream sam9713 61256 SRAM SAM9713 roland sram GMS970800B Roland schematic SOP44 GMS960800B
Contextual Info: 9713GS Reference Design 9713GS BOARD SAM9713 REFERENCE DESIGN 9713GS demonstrates a typical application of SAM9713. This is a Waveblaster compatible board which uses SAM9713 with 512kx16 ROM 8Mbit , 32kx8 SRAM, and a Burr-Brown PCM1718E stereo DAC. The ROM can be of the type GMS960800B (with express permission of Roland corporation, special

Contextual Info: 23C8100 8M-BIT MASK ROM 8/16 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 1M x 8 (byte mode) - 512K x 16 (word mode) • Fast access time - Random access: 100ns (max.) • Current - Operating: 60mA - Standby: 50uA • Supply voltage - 5V±10%