2SD133 Search Results

2SD133

Abstract: 2SD1336 2SD1336A 2sd darlington panasonic 2SD Scans-001793
Contextual Info: Power Transistors 2SP 1336.2SD 1336A bT32fl52 G01b?].2 3bb • g g 2SD1336, 2SD1336A ■ Package Dim ensions Silicon NPN Triple-Diffused Planar Darlington Type Power Switching ■ Features • High speed switching • Good linearity of DC current gain I i f e

Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm Rating Unit Collector-base voltage Emitter open VCBO 25 V Collector-emitter voltage (Base open) VCEO 20 V Peak collector current

Contextual Info: Transistor 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm • Absolute Maximum Ratings Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO

2SD1330

Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 1.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current

SD1336

Abstract: 2SD1336 2SD1336A
Contextual Info: P o w e r T ra n s is to rs ^ 3 2 0 5 2 □Qlb712 3bb m 2SD1336, 2SD1336A 2SD1336, 2SD1336A Package D im ensions Silicon NPN Triple-Diffused Planar Darlington Type Power Sw itching • Features • High sp e ed sw itch in g • Good lin earity o f DC c u rr e n t gain Iife

2SD1330

Contextual Info: Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO

2SD1330

Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 1.0 R 0.9 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 (0.4) • Low collector-emitter saturation voltage VCE(sat) • Low ON resistance Ron

2SD1330

Contextual Info: Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm • Absolute Maximum Ratings Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO

2sc3667

Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A
Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00

2SD1330

Abstract: datasheet for 2SD1330 2sd1330 equivalent
Contextual Info: Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 6.9±0.1 • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO

2SB1010

Abstract: 2SD1384 2SD1334 2Sb1010 transistor T103
Contextual Info: 2SD1334 h ÿ > y * $ 7 - 27 - NPN /ST Power Amp. Epitaxial Planar NPN Silicon Transistor • Ü # \f>i@ /D im ensions Unit : mm • ¥i-Jk 1) Ic m = 2 . 5 A h P c = O .7 5 W 0 ) * f f l* o 2) V ce ( s a t 300 m V Typ. (at 2A) t f e V X * ^o 3) 2 S B 1 0 1 0 f c n > 7 lJ T '& 2 io

forward converter

Abstract: Panasonic Main Unit VB -5150 2SD1330
Contextual Info: Transistors 2SD1330 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 2.5±0.1 1.0 R 0.9 2.4±0.2 (0.85) • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

2SB187

Abstract: 2SB178 2sd118 2SD188 2SD128 2SD111 2SB178A 2SD123 2SD104 2SD105
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD101 80 6 600 250 75 2SD102 110 10 3A 25W(Tc=25ºC) 150 2SD103 80 10 3A 25W(Tc=25ºC) 150 2SD104 20 6 400 150 75 2SD105 20 6 400 150 75 2SD106 2SD107 80 10 5A 50W(Tc=25ºC) 150

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SD1388

Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25

SC3150

Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335
Contextual Info: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160

2SD1570

Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS