2N4125 TRANSISTOR Search Results

2N4125

Contextual Info: 2N4125 Amplifier Transistor. Collector-emitter Voltage: Vceo = -30V. C. 1 of 1 Home Part Number: 2N4125 Online Store 2N4125 Diodes Am plifier Transis t o r. C o llec t o r- em it ter Vo ltage: Vc eo = - 3 0 V.

2N4125

Abstract: 2N4126 2N4125 MOTOROLA 2n4125 equivalent DSA006741
Contextual Info: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N4125 2N4126 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4125 2N4126 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage

transistor 2N4125

Abstract: 2N4125 MOTOROLA 2N4125 2n4125 equivalent ku 602 vc transistor2N4125
Contextual Info: MOTOROLA Order this document by 2N4125/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO

2n4125

Abstract: 2n4126
Contextual Info: 2N4125 2N4126 M A XIM U M RATINGS Symbol 2N4125 2N4126 Unit Collector-Emitter Voltage VCEO 30 25 Vdc Collector-Base Voltage VCBO 30 Emitter-Base Voltage vebo 4.0 Vdc Collector Current - Continuous 'c 200 mAdc Total Device Dissipation «'• Derate above 25°C

2N4125

Abstract: 2N4126 2n4125 transistor
Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V c e o *= 2N4125:3 0 V 2N4126:25V • Collector Dissipation: Pc max «625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage

2N4125

Contextual Info: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2N4125

Abstract: 2n4125 equivalent CBVK741B019 F63TNR PN2222N transistor 2N4125
Contextual Info: 2N4125 2N4125 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

2N4125

Abstract: 2N4126
Contextual Info: 2N4125 2N4126 MAXIMUM RATINGS Rating Sym bol 2N4125 2N4126 v CEO -3 0 -2 5 Vdc Collector-Base Voltage VCBO -3 0 -2 5 Vdc Em itter-Base Voltage C oilector-E m itter Voltage U n it v EBO - 4 .0 Vdc Collector C urrent — C ontinuous >C -200 m Adc Total Device D issipation m T /\ = 253C

Contextual Info: Small Signal Low Noise Transistors Part No. BC238 BC239 2N4124 2N5089 MPS6521 2N4123 2N5088 MPSA18 2N5210 2N5961 2N4410 BC308 BC309 2N4126 MPS6523 2N4125 PN4248 PN4250 2N5086 2N5087 20070515 Polarity NPN PNP V (A) hFE @ VCE & IC NF Max. Condition IC VCE

2n3904 2n3906

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64

LC 300-S

Abstract: 2N41 2N4125
Contextual Info: Transistors 2N4125 USHA INDIA LTD AMPLIFIER TRANSISTOR * Collector-Emitter Voltage: Vceo = 2N41 25: 30V TO-92 * Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO -3 0 V

2N4126

Abstract: 2N41 2N4125 transistor 2N4125 2n4125 transistor Tj150
Contextual Info: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: TO-92 = 2N41 25: 3 0 V 2N4126: 25V * Collector Dissipation: Pc m ax =625mW V ceo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic C ollector-B ase Voltage :2 N 4 1 2 5

N4030

Abstract: 2N2906 to92 2pa733 2N4033 MPS3640 2PA1015 2N2907 TO-92 2PA1015L
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - PNP Types Type 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N3906 2 N4030 2N4031 2N4032 2N4033 2N4125 2N4126 2N4402 2N4403 2N5086 2N5087 2PA733* 2PA1015* 2PA1015L* JA100* JA101 *

Contextual Info: 2N4125 2N4126 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 packages, p rim a rily intended fo r low -pow er, small-signal a u d io ­ frequency a p p lica tio ns fo r consum er service.

2n4125 transistor

Abstract: 2N4125
Contextual Info: TOSHIBA 2N4125 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqbo ~ -50nA Max. @ Vqb _ -20V - l(£go ~ -50nA (Max.) @ V^g = -3V • Low Saturation Voltage - VCE(sat) = -0.4V (Max.) @ lc = -50mA, lB = -5mA

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bb53R31 ODBfllSE A IAPX 2N 4123 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for low-power, small-signal audio­ frequency applications for consumer service. P-N-P complements are 2N4125 and 2N4126.

2n4125 equivalent

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor 2N4125 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 30 Vdc Collector – Base Voltage VCBO 30 Vdc Emitter – Base Voltage

2N3906

Abstract: 2N4125
Contextual Info: SA MS UN G SEM IC ONDUCTOR INC ; 2N4125 IME O | 7 ^ 4 1 4 2 0Q0?lb7 S PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Veso =30 V * Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (T8=25°C)

2N4126

Abstract: 2N4125 2N4125 NPN 2N4123 2N4124 UBB013
Contextual Info: 2N4125 2N4126 PHILIPS INTERNATIONAL SbE J> 711005b 0042bLj4 Ö02 M P H I N T-2^-/7 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 envelopes, prim arily intended fo r low-power, small-signal audio­ frequency applications for consumer service.

Contextual Info: 4 TOSHIBA TRANSISTOR 2N4125 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current : ICBO=_50nA(Max.) @ V c b =-20V lEBO=-50nA(Max.) @ V e B=-3V . Low Saturation Voltage : ^ C E ( s a t ) = ~ 0 .

2N5219

Abstract: 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E sa t E b v CEO Device T yp e @ 1 0 m A -(V ) Min. M ax. @ l c (m A ) V c e (V ) NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N4124 2N4125 2N4126 2N4400

2N3906

Abstract: 2N4125 42761 2N3905 2N4123 2N4124 2N4126 MCS-4277B zc842t70 2n3905A
Contextual Info: G □1 E SOLI» STATE f 3875081 G E SOLÏD'STATE DE|3Û7SDÛ1 ' ''' OIE’“ "17927 0D17TS7 D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 r - BA SE C U R R E N T l B - m A C O LLE C T O R C U R R E N T ( l c ) - m A 92CS-42777 fig . 9 - Typical basB-lo-emitlersaturalion voltage characteristics lor

2n3905A

Abstract: 2N4125 2N4125 NPN
Contextual Info: G E SOLI» STATE □1 f ' ''' OIE‘“ "17927 3875081 G E SOLÏD'STATE D E | 3 Û 7 S D Û 1 0D17TS7 5 | D Signal Transistors 2N4123, 2N4124, 2N4125, 2N4126 T •2*5-'? BASE C U RR EN T lB - m A C O LLE C T O R C U R R E N T ( lc ) - m A 92CS-42777 Fig. 9 - Typicalbase-to-emittersaturation voltage characteristics for