2N642 Search Results

2N642 Datasheets (239)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N642	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	79.98KB	1
2N642	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	176.36KB	2
2N642	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	93.04KB	1
2N642	Unknown	Vintage Transistor Datasheets	Scan	PDF	53.68KB	1
2N642	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.2KB	1
2N642	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	83.31KB	1
2N642	Unknown	GE Transistor Specifications	Scan	PDF	39.5KB	1
2N642	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	140.28KB	1
2N642	RCA	RCA Transistor and Diode Data	Scan	PDF	38.26KB	1
2N6420	Central Semiconductor	Power Transistors	Original	PDF	50.39KB	1
2N6420	Semelab	Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Original	PDF	10.64KB	1
2N6420	Boca Semiconductor	COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Scan	PDF	227.85KB	4
2N6420	General Electric	High-voltage, medium-power silicon P-N-P transistor. - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Scan	PDF	219.18KB	5
2N6420	Mospec	POWER TRANSISTORS(35W) - Pol=PNP / Pkg=TO66 / Vceo=175 / Ic=1 / Hfe=40/200 / fT(Hz)=10M / Pwr(W)=35	Scan	PDF	222.29KB	4

2N6420	Mospec	Complementary Medium-Power High Voltage Power Transistor	Scan	PDF	222.28KB	4
2N6420	Motorola	The European Selection Data Book 1976	Scan	PDF	46.74KB	1
2N6420	Motorola	European Master Selection Guide 1986	Scan	PDF	42.83KB	1
2N6420	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	387.61KB	9
2N6420	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	35.5KB	1
2N6420	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	116.58KB	1

...

2N642 Price and Stock

Filter by Manufacturer

Select Manufacturer


Rochester Electronics LLC 2N6426RLRA TRANS NPN DARL 40V 0.5A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6426RLRA	Bulk	184,795		3,030	1 - 10 - 100 - 1000 - 10000 $0.10	Buy Now
Microchip Technology Inc 2N6420 TRANS PNP 175V 1A TO66
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6420	Bulk			100	1 - 10 - 100 $31.34 1000 $31.34 10000 $31.34	Buy Now
Avnet Americas	2N6420	Bulk		50 Weeks	100	1 - 10 - 100 $25.44 1000 $24.21 10000 $23.81	Buy Now
Mouser Electronics	2N6420					1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Get Quote
Microchip Technology Inc	2N6420					1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Buy Now
Onlinecomponents.com	2N6420					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now

Master Electronics	2N6420					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
onsemi 2N6426 TRANS NPN DARL 40V 0.5A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6426	Bulk			10,000	1 - 10 - 100 - 1000 - 10000 $0.06	Buy Now
Avnet Americas	2N6426	Bulk			8,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Microchip Technology Inc 2N6425 TRANS PNP 300V 1A TO66
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6425	Bulk			100	1 - 10 - 100 $31.34 1000 $31.34 10000 $31.34	Buy Now
Avnet Americas	2N6425	Bulk		50 Weeks	100	1 - 10 - 100 $25.44 1000 $24.38 10000 $24.25	Buy Now
Microchip Technology Inc	2N6425					1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Buy Now
Onlinecomponents.com	2N6425					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
Master Electronics	2N6425					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
Microchip Technology Inc 2N6422 TRANS PNP 300V 2A TO66
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N6422	Bulk			100	1 - 10 - 100 $31.34 1000 $31.34 10000 $31.34	Buy Now
Avnet Americas	2N6422	Bulk		50 Weeks	100	1 - 10 - 100 $25.44 1000 $24.21 10000 $23.81	Buy Now
Microchip Technology Inc	2N6422					1 $28.49 10 $28.49 100 $28.49 1000 $28.49 10000 $28.49	Buy Now
Onlinecomponents.com	2N6422					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now
TME	2N6422				13	1 - 10 - 100 $28.66 1000 $28.66 10000 $28.66	Get Quote

Master Electronics	2N6422					1 - 10 - 100 $25.26 1000 $25.26 10000 $25.26	Buy Now

Find more 2N642 price and stock on Findchips.com

2N642 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LB 124 transistor Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427 Contextual Info: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D \| k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ \| C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor	OCR Scan	bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC	PDF
2N6427 Abstract: 2N6426 Contextual Info: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc	Original	2N6426* 2N6427 r14525 2N6426/D 2N6427 2N6426	PDF
2N6426G Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64 Contextual Info: 2N6426, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage	Original	2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64	PDF
clare mercury relay Abstract: P609 30343 power 2N6422 2N6421 30343 2N6422 GE Contextual Info: HARRIS SEMICOND SECTOR SbE ì> 2N6420, 2N6421, 2N6422, 2N6423 4302 27 1 QD4D552 ^03 • H A S File Number 1100 T 3 3 -R High-Voltage Medium-Power Silicon P-N-P Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ High voltage ratings:	OCR Scan	2N6420, 2N6421, 2N6422, 2N6423 QD4D552 2N6420) 2N6421) 2N6422) 2N6423) clare mercury relay P609 30343 power 2N6422 2N6421 30343 2N6422 GE	PDF
2N6428 Abstract: as dc hfe nv 2N6428A 2N5088 Contextual Info: 2N6428/6428A 2N6428/6428A Amplifier Transistor • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	2N6428/6428A 625mW 2N5088 2N6428 as dc hfe nv 2N6428A	PDF
2N6427 Abstract: MMBT6427 MPSA14 Contextual Info: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted	OCR Scan	2N6427 MMBT6427 MPSA14 MMBT6427	PDF
Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 50V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage	Original	2N6428/6428A 625mW 2N5088	PDF
Contextual Info: 2N6421 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6421 O213AA) 30-Jul-02	PDF
Contextual Info: 2N6425A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6425A O213AA) 30-Jul-02	PDF
Contextual Info: 2N6420 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6420 O213AA) 30-Jul-02	PDF
Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N6426 MPSA14	PDF
2SA1402E Abstract: 2SC2224 2SA1371E Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 30 i:;:'''', .U(U 2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 RXT3906 2SA1404D 2SA1404E 2SA1404F 2SA1541 2SA1476 2SA964 2SC2224 BFN19 ~~~J~A 35 40 2SA795 MJ373B 2N6424 MJ3739 2N6425	Original	2SA1407E 2SA1407F 2N2894 KF3509 2N3209 2N3209L PZT3906 RXT3906 2SA1404D 2SA1402E 2SC2224 2SA1371E	PDF
2N6427 Abstract: MMBT6427 MPSA14 Contextual Info: 2N6427 I MMBT6427 Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " MMBT6427 2N6427 SOT-23 B Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from	OCR Scan	2N6427 MMBT6427 OT-23 MPSA14 bSG113D 2N6427 MMBT6427	PDF
2N6420 Abstract: transistor pnp 1a operational amplifier power 1A Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6420 DESCRIPTION •Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE sat = -5.0 V(Max)@ IC = -1A APPLICATIONS	Original	2N6420 -50mA -150V; -225V; 2N6420 transistor pnp 1a operational amplifier power 1A	PDF

2N3738 equivalent Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912	Original	2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420	PDF
2N6422 Contextual Info: 2N6422 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6422 O213AA) 1-Aug-02 2N6422	PDF
2N6421 Contextual Info: 2N6421 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2N6421 O213AA) 1-Aug-02 2N6421	PDF
Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V C e o = 50V • C ollecto r D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage	OCR Scan	2N6428/6428A z-10K 2N6428 2N6428A 100Hz	PDF
2sc498 Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714 Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237	OCR Scan	2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc498 2SC875 2SA503 2sc1175 FT501 2SA532 2SA606 2sa708	PDF
Contextual Info: SEMICONDUCTOR • 2N6426 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted	OCR Scan	2N6426 MPSA14	PDF
2N6427 Abstract: CBVK741B019 F63TNR MMBT6427 MPSA14 PN2222N sot23 mark code e2 MPS-A14 Contextual Info: 2N6427 / MMBT6427 2N6427 MMBT6427 C E C B TO-92 B SOT-23 E Mark: 1V NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.	Original	2N6427 MMBT6427 2N6427 OT-23 MPSA14 CBVK741B019 F63TNR MMBT6427 PN2222N sot23 mark code e2 MPS-A14	PDF
BC237 Abstract: 2n6426 equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors 2N6426* 2N6427 NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating VCEO 40 Vdc Collector – Base Voltage	Original	2N6426* 2N6427 226AA) Juncti218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 2n6426 equivalent	PDF
6428A Abstract: 2N6428 2n5088 transistor 2N5088 2N6428A N6428 Contextual Info: 2N6428/6428A NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • C ollector-E m itter Voltage: V Ceo= 50V • C ollector Dissipation: P c m a x = 62 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage	OCR Scan	2N6428/6428A 625mW 2N5088 100nA, 100HA 100mA, N6428 N6428A 100HA 100Hz 6428A 2N6428 2n5088 transistor 2N6428A N6428	PDF
2N6427 Abstract: MMBT6427 MPSA14 Contextual Info: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys	OCR Scan	2N6427 MMBT6427 OT-23 MPSA14 2N6427 MMBT6427	PDF

2N642 Search Results

2N642 Datasheets (239)

2N642 Price and Stock

Rochester Electronics LLC 2N6426RLRA

Microchip Technology Inc 2N6420

onsemi 2N6426

Microchip Technology Inc 2N6425

Microchip Technology Inc 2N6422

2N642 Datasheets Context Search

LB 124 transistor

2N6427

2N6426G

clare mercury relay

2N6428

2N6427

2SA1402E

2N6427

2N6420

2N3738 equivalent

2N6422

2N6421

2sc498

2N6427

BC237

6428A

2N6427