2SK220 Search Results
2SK220 Datasheets (65)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK220 | Hitachi Semiconductor | Power Transistors Data Book | Scan | 127.11KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK220 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 123.7KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK220 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 101.94KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK220 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 81.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2200 |
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Original | 44.05KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2200 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2200 |
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N-Channel MOSFET | Original | 419.78KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2200 |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2200 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 126.05KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2200 |
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Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Scan | 283.98KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2200 |
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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE | Scan | 310.99KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201 |
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Original | 44.05KB | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201 |
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201 |
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N-Channel MOSFET | Original | 429.34KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SK2201 |
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Power MOSFET Selection Guide with Cross Reference Data | Original | 1.45MB | 45 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 126.05KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201 |
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Silicon N channel field effect transistor for high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications | Scan | 285.89KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201 |
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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE | Scan | 317.11KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201(2-7J1B) |
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2SK2201 - TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power | Original | 430.49KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SK2201LBTE16L |
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2SK2201 - TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power | Original | 430.49KB | 6 |
2SK220 Price and Stock
Rubycon Corporation 420USK220MEFCSN25X30Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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420USK220MEFCSN25X30 |
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Get Quote | ||||||||
Rubycon Corporation 420USK220MEFCSN22X35Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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420USK220MEFCSN22X35 |
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Get Quote | ||||||||
Rubycon Corporation 400USK220MEFCSN22X30Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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400USK220MEFCSN22X30 |
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Rubycon Corporation 400USK220MEFCSN25X25Aluminum Electrolytic Capacitors - Snap In GENERAL PURPOSE ELECTROLYTIC CAPACITORS |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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400USK220MEFCSN25X25 |
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Toshiba America Electronic Components 2SK2201-TE16L |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SK2201-TE16L | 520 |
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Buy Now |
2SK220 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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diode U1JContextual Info: TOSHIBA 2SK2201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2SK2201 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE APPLICATIONS 4V Gate Drive |
OCR Scan |
2SK2201 0-28H -20kil) diode U1J | |
2SK2200Contextual Info: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2 |
OCR Scan |
2SK2200 | |
2SK245
Abstract: 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240
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Original |
2SK201 2SK203 2SK205 2SK208 2SK209 2SK210 2SK211 2SK212 2SK213 2SK214 2SK245 2SK270 2SK243 2sk205 2SK239A 2SK224 2SK214 2SK259H 2Sk226 2SK240 | |
2SK2206
Abstract: Hitachi DSA001652
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Original |
2SK2206 O-220CFM D-85622 2SK2206 Hitachi DSA001652 | |
Contextual Info: 2SK2203 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC - DC |
OCR Scan |
2SK2203 2SK2121. | |
Contextual Info: 2SK2205 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source • Suitable for DC - DC converter, Motor control |
OCR Scan |
2SK2205 2SK220S 2SK2204. | |
Hitachi DSA00279Contextual Info: 2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter |
Original |
2SK2202 ADE-208-089 Hitachi DSA00279 | |
Contextual Info: 2SK2204 L , 2SK2204(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter |
OCR Scan |
2SK2204 D-85622 | |
2SK221
Abstract: 2SK220 H241 HITACHI 2SK* TO-3
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OCR Scan |
44TbBD5 2SK220Â 2SK221Â 2SK221 2SK220 H241 HITACHI 2SK* TO-3 | |
Contextual Info: 2SK2202 Silicon N-Channel MOS FET HITACHI Application High speed power -switching Features • • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator. DC-DC converter |
OCR Scan |
2SK2202 ADE-208-089 O-220FM | |
2sk2206Contextual Info: 2SK2206 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • Low drive current • H igh speed sw itching • 4 V gate drive device can be driven from 5 V source • Suitable for D C -D C converter, M otor control |
OCR Scan |
2SK2206 O-220CFM 2SK2204. 2sk2206 | |
2SK2201Contextual Info: 2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2201 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) l High forward transfer admittance |
Original |
2SK2201 2SK2201 | |
2SK2201
Abstract: K2201
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OCR Scan |
2SK2201 K2201 | |
Contextual Info: bl E D HMTbEOS 0013010 Ibb • H I T 4 2SK220H, 2SK2 21 H HI TA CH I/(OPTOELECTRONICS) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING. HIGH FREQUENCY POWER AMPLIFIER ■ FEATURES • High S p e e d S w itc h in g . • High C u to ff F r e q u e n c y . |
OCR Scan |
2SK220H, 2SK22O 2SK221 | |
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Contextual Info: 2SK2206 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • Low drive current • High speed switching • 4 V gate drive device can be driven from 5 V source • Suitable for DC-DC converter, Motor control |
OCR Scan |
2SK2206 O-220CFM | |
2SK2208Contextual Info: 2SK2208 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V(BR) DSS VGSS ±30 V I GSS ID ±5 A I DSS ±20 A VTH 2.0 3.0 75 (Tc = 25ºC) W Re (yfs) 2.0 3.0 400 ID (pulse) *1 |
Original |
2SK2208 FM100 2SK2208 | |
2SK2208Contextual Info: 2SK2208 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 900 V V(BR) DSS VGSS ±30 V I GSS ID ±5 A I DSS ±20 A VTH 2.0 2.0 ID (pulse) *1 PD W Re (yfs) RDS (on) 2.5 ±100 nA |
Original |
2SK2208 FM100 2SK2208 | |
2SK2121
Abstract: 2SK2203
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Original |
2SK2203 2SK2121. 2SK2121 2SK2203 | |
2SK2203
Abstract: DSA003639
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Original |
2SK2203 ADE-208-1350 2SK2203 DSA003639 | |
Contextual Info: 2SK2202 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter |
OCR Scan |
2SK2202 O-220FM | |
2SK2201Contextual Info: 2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2201 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance |
Original |
2SK2201 25transportation 2SK2201 | |
Contextual Info: 2SK2205 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • Lo w drive current • High speed switching • 4 V gate drive device can be driven from 5 V source • Suitable for DC-DC converter. Motor control |
OCR Scan |
2SK2205 2SK2204. | |
2SK2200Contextual Info: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm |
OCR Scan |
2SK2200 2SK2200 | |
2SK2200Contextual Info: 2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2200 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.28 Ω (typ.) l High forward transfer admittance |
Original |
2SK2200 2SK2200 |