TME 57
Abstract: D02S D012 D031 EDI8M3264C
Text: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static
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000125b
EDI8M3264C
64Kx32
EDI8M3264C
64Kx4
oI8M3264C
3S30114
00012h0
EDI8U3264C
TME 57
D02S
D012
D031
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static
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32301m
EDI8F8512C/LP/P
512Kx8
EDI8F8512C/LP/P
4096K
128Kx8
150ns
T-46-23-14
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CDQ15
Abstract: COOA EDH816H64C 1024K-BIT
Text: ELECTRONIC D E S I GN S INC 30E D • 32301m ■ EDI 0dQat.3b 1 ■ ED H 8 1 6 H 6 4 C E t*d ic n le D tilg ra I n c . High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDH816H64C Isa 1024K-bit high speed CMOS
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EDH816H64C
64Kx16
EDH816H64C
1024K-bit
64Kx1
64Kx4
128Kx8
256Kx4
CDQ15
COOA
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T1IS
Abstract: GQQ0731 ragy 3530114
Text: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static
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EDI8F8512C/LP/P
512Kx8
EDI8F8512C/LP/P
4096K
128Kx8
28Kx8
G0G0734
T-46-23-14
353011M
T1IS
GQQ0731
ragy
3530114
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Untitled
Abstract: No abstract text available
Text: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB
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EDI7P16xxxA
220MB
110MB
car04
EDI7P16xxxATA00Z
EDI7P16xxxCFA00Z
175MB
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WA126
Abstract: GA-311
Text: ^ E D EDI9F81025C I e le c tro n s : designs, n c .1 2x512Kx8 SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on 2x512Kx8 bit CMOS Static two 512Kx8 Static RAMs mounted on a multi-layered epoxy Random Access Memory
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EDI9F81025C
2x512Kx8
100ns
EDI9F81025LP)
EDI9F81025C
512Kx8
WA126
GA-311
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T2D 53
Abstract: T2D 44 CNC34 EDBF2464CRW ca1342 t2d 96 41A123 T2D 48 t2d 46 T2D 56
Text: ^EDI EDI8F2464C 61ÉCTRONC 065K3NS N C . 64Kx24 SRAM Module 64Kx24 Static RAM CMOS, High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM 64Kx24 bit CMOS Static module organized as 64Kx24. This module is constructed Random Access Memory
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065H3NS
EDI8F2464C
64Kx24
EDI8F2464C
64Kx24.
64Kx4
323G114
T2D 53
T2D 44
CNC34
EDBF2464CRW
ca1342
t2d 96
41A123
T2D 48
t2d 46
T2D 56
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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D012
Abstract: D019 D020 D023 EDI8F32128C t462
Text: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is
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323G114
EDI8F32128C
128Kx32
EDI8F32128Cisahighspeed4megabitStatic
128Kx8
EDI8F32128C
EDI8F32128C15MMC
EDISF32128C20MMC
EDI8F32128C25MMC
D012
D019
D020
D023
t462
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Untitled
Abstract: No abstract text available
Text: W D EDI8F32513C Ì 512Kx32 Battery Backed ELECTRONIC DESIGNS. INC. SRAM Module ADVANCED Features 512Kx32 bit C M O S Static Random Access Memory with on-board battery backup 512Kx32 Battery Backed SRAM Module • Access Times 70 and 85ns The EDI8F32513C is a 16 megabit Battery Backed S R A M
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EDI8F32513C
512Kx32
EDI8F32513C
512Kx
512Kx8
KeeperEDI8F32513C
S12Kx32
EDI8F32513C70MMC
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Untitled
Abstract: No abstract text available
Text: EDI8F81025C M D I ELECTRONIC DESIGNS \NCm Commercial Eight Megabit SRAM Module 1 Megabit x 8 iu m Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.
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EDI8F81025C
EDI8F81025C
512Kx8
100ns
EDI8F81025LP)
EDI8F81025LP
I8F81025C70B6C
70B6L
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Untitled
Abstract: No abstract text available
Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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EDI784MS
EDI784MSV
528-byte
250ms
funI784MSV
EDI784MSV50BB
ED1784MSV50FB
EDI784MSV50BB
EDI7MMSV50BC
300MW
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4k51
Abstract: Flash SIMM 80 programmer
Text: ^ED I 2 ,4,8 EiCTDONIC DESIGN M egabyte FISSAI 512Kx32 Flash Module Features The EDI Flash Family is a five-volt-only in system Flash program 2,4,8 megabyte CMOS Flash Module Family Organization: mable and eraseable read only memory module. The modules are
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512Kx32
2x512Kx32
4x512Kx32
Time-120ns
Time-10mS
EDI7F32512CA120BNC
EDI7F32512CA150BNC
EDI7F232512CA120BNC
EDI7F232512CA150BNC
4k51
Flash SIMM 80 programmer
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Untitled
Abstract: No abstract text available
Text: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This
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EDI8F24129C
128KX24
EDI8F24129C
128Kx8
0001b
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EDI88512C
Abstract: ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB The32 ed188512
Text: ELEC TRO NIC ^ E D D ES IG N S IN C SIE D • 3230114 0QD123Ö 550 M E L D E D I8 8 5 1 2 C I _ EI«drort c D rtg n * Inc. ■ — ■ — Four Megabit Monolithic SRAM h w y /M 512Kx8 Static RAM CMOS, Monoiithic F M ñ T []© íj
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35301m
EDI88512C
512Kx8
EDI88512C
The32
ED188512LP)
MIL-STD-883,
EDI88S12C70NB
ED188512C
EDI88512C70CB
EDI88512C100CB
EDI88512C100LB
EDI88512C70LB
EDI88512C85CB
EDI88512C85LB
ed188512
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EDI8F81024C
Abstract: EDI8F81024C70BSC EDI8F81024C85BSC MELP
Text: ELECTRONIC DESIGNS INC SIE D • 3S30114 0001130 b?T ■ ELD 82EDI EDI8F81024C Btdronlc DMlgra Ine. - Commercial Eight Megabit SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81024C is a 8192K bit CMOS Static RAM based on eight 128Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate.
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EDI8F81024C
EDI8F81024C
8192K
128Kx8
EDI8F81024LP)
operat25
EDI8F81024C70BSC
EDI8F81024C85BSC
MELP
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EDI8L3265C
Abstract: OQ23 "Electronic designs inc"
Text: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array
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EDI8L3265C
64Kx32
EDI8L3265C
128Kx16
EDI8L3265C,
EDI8L3265C12AC
EDI8L3265C15AC
EDI8L3265C17AC
EDI8L3265C20AC
OQ23
"Electronic designs inc"
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EDI8F32512C
Abstract: fr4 substrate
Text: EDI8F32512C Electronic Designs Inc. High Speed Sixteen Megabit SRAM Module 512Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32512C is a high speed 16 megabit Static 512Kx32 bit CMOS Static RAM module organized as 512K words by 32 bits. This Random Access Memory
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EDI8F32512C
512Kx32
EDI8F32512C
512Kx8
fr4 substrate
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EDI8C8512C35TM
Abstract: EDI8C8512C45TM EDI8C8512C55TM
Text: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi layered, multi-cavity ceramic substrate. This high speed
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22EDI
EDI8C8512C
512Kx8
EDI8C8512C
4096K
128Kx8
323D11M
EDI8C8512C35TM
EDI8C8512C45TM
EDI8C8512C55TM
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256KX16
Abstract: EDI8F16256C
Text: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static
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EDI8F16256C
256KX16
4096K-bit
512Kx8
1024Kx4
EDI8F16256C
256Kx4
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Untitled
Abstract: No abstract text available
Text: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi layered ceramic substrate. Functional equivalence to the monolithic two megabit
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
128Kx8
the128Kx8
EDI8M8257LP)
323011M
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Untitled
Abstract: No abstract text available
Text: SEX EDI7C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Features The EDI7C32128C is a high performance, four megabit 128Kx32 bit C M O S Flash density Flash EEPROM organized as 128Kx32 bits. The • Five-volt-only reprogramming
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EDI7C32128C
128Kx32
EDI7C32128C
128Kx8
200ns
I7C32128C120JM
I7C32128C150JM
I7C32128C200JM
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI9F321024C E IK T O O N C M SGNSL NC.I '1Megx32 SRAM Module 1 Meg x32 CMOS Static RAM Module Features The EDI9F321024C CMOS Static RAM Module is orga 1M egx32 bits CMOS Static nized as 1Meg x 32 bits. Random Access Memory Module The module is constructed from 3 2 128Kx8 Static RAMs in
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EDI9F321024C
1Megx32
EDI9F321024C
egx32
128Kx8
EDI9F321024C35MCC
EDI9F321024C45MCC
01581USA
EDSF321024C
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TME 57
Abstract: No abstract text available
Text: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The EDI9F36256C is a high speed 9 megabit Static RAM 256Kx36 bit CMOS Static module organized as 256K words by 36 bits. Four chip selects E0-E3 are used to independently enable
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EDI9F36256C
256Kx36
EDI9F36256C
EDI9F36256C20MZC
EDI9F36256C25MZC
TME 57
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