40N60A 4 Search Results

40N60A

Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Contextual Info: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A

40N60

Abstract: G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A
Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES IC25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ

40N60

Abstract: 40n60 igbt 40N60A IXGH40N60 G 40N60 igbt N60A IC IGBT 40N60 g 40n60 IXGH40N60A IXGM40N60A
Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C, limited by leads

40n60 igbt

Abstract: 40n60 40N60A G 40N60 igbt 40n60 equivalent D-68623 igbt equivalent to 40n60
Contextual Info: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES I C25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ

Contextual Info: IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A Low VCE sat IGBT1 v High Speed IGBT VC E S ^C 25 VC E (sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SO A Capability Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V v CGR ^ 600 V Maximum Ratings = 25°C to 150°C; RGE = 1 M£2

40n60 igbt

Abstract: 40n60 IXGH/40n60 igbt 40N60A G40N60a IXGH/IXGM 40 N60A G 40N60 igbt igbt equivalent to 40n60 IXGH40N60 40n60 transistor
Contextual Info: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads

40N60A

Abstract: 40n60 IXGH40N60 743e 40n60 igbt AT/40n60 igbt
Contextual Info: : Low VCE sat IGBT1 w High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 Mi2 600 V Continuous ±20 V Transient ±30 V vCGR vGES vGEM Maximum Ratings 'c25 Tc = 25°C, limited by leads

40N60

Abstract: 40N60A 40n60 igbt
Contextual Info: LowVCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VC E S ^C 25 VC E (s a t) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol v Test Conditions Maximum Ratings Tj = 25°C to 150°C 600 V v COR T j = 25°C to 150°C; RGE = 1 MO

4on60

Abstract: B289 IXGH40N60 1XGM40N60A ges 2222 B-289 40n60
Contextual Info: VCES IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Low VCE sat IGBT High speed IGBT »C25 75 A 75 A 600 V 600 V V " CE(sat) 2.5 V 3.0 V Not for new designs Symbol Test Conditions Maximum Ratings v CE S ^ = 2 5 °C to 1 5 0 °C 600 V VCo„ ^ = 25°C to 150°C; HGE = 1 M fi

Contextual Info: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62

30n60

Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Contextual Info: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100

ixgh 1500

Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•

mm036

Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA

IGBT IXGH40N60A

Abstract: IXGH40N60A IXGH40N60 40N60A
Contextual Info: IXGH40N60A IGBT V CES 600 V 75 A 3.0 V ^C25 L O W V CE S„ High speed V CE(sat) Not for new designs Symbol Test Conditions Maximum Ratings v ces T j = 25° C to 150° C 600 V V CGR T j, = 25° C to 150° C; RC„at = 1 MQ 600 V VGES Continuous J-20 V VGE*

b14 smd diode

Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Contextual Info: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

SMD diode b24

Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Contextual Info: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64

7N60B

Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Contextual Info: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28

120n60b

Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Contextual Info: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *

24N60

Abstract: 40N60A4 40n60 robot control 24N60A 40N60A D-68623 gate drive circuit for igbt 40n60a 4
Contextual Info: HiPerFASTTM IGBT IXSH 24N60 IXSH 24N60A VCES IC25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

40n60 transistor

Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching

all type of thyristor

Abstract: mosfet power class d Discrete Thyristor Chip 1200 A thyristor 6912 mosfet rectifier diode thyristor phase control chip ixys thyristor thyristor 60 A IXYS CDWEP
Contextual Info: Symbols and Definitions Cies Ciss -di/dt IC ID IF IF AV M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc rT Tcase Th tfi Tj, T(vj) Tjm, T(vj)m trr VCE(sat) VCES VDRM VDSS VF VR VRRM VT VT0 Input capacitance of IGBT Input capacitance of MOSFET Rate of decrease of forward current