GE MOTOR 752 Search Results

TDA 7450

Abstract: MVL blower PAPST TYP 8412 NGH papst typ 614 papst 8412 L papst 4214/12h papst variofan 4314 v papst 4312 ebm papst RG 160 papst-motoren
Contextual Info: PAPST BASICS S t a n d a rd R a n g e of Fans and Blowers Tr e n d s e t t e r i n F a n Te c h n o l o g y Among the best. Trendsetting with innovative technologies. Listening to customers’ needs. Developing new ideas to meet requirements and realising them with pioneering spirit.

DISTRIBUTION BOARD

Abstract: HD384 hard drive motor circuit hard drive CIRCUIT diagram ge power controls MPACT POWER Transformator Hard disc
Contextual Info: GE Consumer & Industrial Power Protection Concept of the installation - In horizontal and vertical direction Sources - Number of sources: 6 normal + emergency source upto 6300A in parallel + standby power unit - Earthing systems: TN(-C-S), TT and IT with and without neutral

Lodtrak III

Abstract: Lodtrak IV PGC5000 MANUAL multilin 169 multilin 369 WESTINGHOUSE motor life line multilin 269 Neutral grounding resistor DC UNGROUNDED EARTH FAULT detector circuit using delta plc cable pin diagram RS-232
Contextual Info: Littelfuse POWR-GARD products and services enhance the productivity and safety of electrical systems. Along with protection relays, POWR-GARD® offers current-limiting fuses to decrease Arc-Flash exposure, fuseholders and fusecovers to reduce incidental contact, and Electrical Safety Services and

BA6840BFP

Contextual Info: Motor driver ICs 3-phase motor driver BA6840BFS/BA6840BFP-Y/BA6840BFP/ BA6842BFS The BA6840BFS, BA6840BFP-Y, BA6840BFP, and BA6842BFS are one-chip ICs designed for driving CD-ROM m o­ tors. They are high perform ance-ICs with a 3-phase, full-wave, pseudo-linear drive system.

Contextual Info: □ IXYS U ltr a - L o w V . „ IG B T CE sat IX G H 31N 60 Vr„ = IX G T 31N 60 I = 60 = 1 .7 V CES C25 V rP , CE(sat) 6 0 0 V A Preliminary data sheet Symbol Test C onditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i 600

L-1047

Contextual Info: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous

15N120CD1

Abstract: 15N120 GC smd diode IXGT15N120BD1 smd diode Lf 047
Contextual Info: □ IXYS Advanced Technical Information V DSS Low VrF, n IGBT with Diode CE sat IXGH/T 15N120BD1 IXGH/T 15N120CD1 ^C25 1200 V 30 A 1200 V 30 A V CE(sat) 3.2 V 3.8 V Combi Pack Symbol TestConditions Maximum Ratings V C ES T j = 25°C to 150°C 1200 V V CGR

ge motor 752

Abstract: 60N60 IXGH60N60 60n60 igbt
Contextual Info: H Î Y Y ^JL sIk»!? flH V w A Ultra-Low VCE sat IGBT IXGH/IXGK/IXGT 60N60 V CES I 600 V 75 A 1.6 V C25 V CE(sat) Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 MQ 600 V

Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

ge motor 752

Abstract: IXGH32N60
Contextual Info: Q T X Y<*JLS w B w A- 4>C HiPerFAST IGBT Lightspeed™ Series IXGH 32N60C IXGT 32N60C VCES ^C25 V CE sat typ fi typ 600 V 60 A 2.1 V 55 ns Preliminary data sheet Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ

Contextual Info: □IXYS Advanced Technical Information LowVrP, „ üh sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V ^C25 V CE(sat) Combi Pack AL Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V CGR Tj = 25°C to 150°C; RGE = 1 M£i

Contextual Info: BIXYS Advanced Technical Information Ultra-Low VCE sat IGBT with Diode IXGH 31N60D1 IXGT 31N60D1 CES C25 V CE (sat) 600 V = 60 A = 1.7 V oc Combi Pack §_ü^3 i ) ÒB Symbol Test Conditions Maximum Ratings V CES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T j = 25=C to 150° C; RGE = 1 M ii

Contextual Info: □ IXYS Advanced Technical Information IXGH 20N100 IXGT 20N100 IGBT Symbol Test Conditions v CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 40 A ^C90 Tc = 90°C

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

025B2

Abstract: ge motor 752
Contextual Info: ' D I X Y Advanced Technical Information S Ultra-Low VCE sat IGBT with Diode 1XGH 28N60B IXGT 28N60B V CES ^C25 v CE(sat) 600 V 40 A 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings v CES T, = 2 5 °C to 1 5 0 °C 600 V VcOR T ,J = 25° C to 150° C; R_.

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGH 15N120C IXGT 15N120C V CES ^C25 V CE sat Lightspeed Series ^ fi(typ ) Symbol TestConditions v CES T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C; RGE = 1 M£i 1200 V V GES C ontinuous ±20 V v GEM

IXSH40N60B

Contextual Info: OIXYS AdvancedTechnical Information IXSH 40N60B IXST 40N60B High Speed IGBT "C E S ^C25 vw CE sat Short Circuit S O A Capability « ^fityp Maximum Ratings Symbol Test Conditions vCES Td =25°Cto150°C 600 V V C0R Tj = 25°Cto150°C;RGE= 1 M£2 600 V Continuous

IXDH30N120AU1

Abstract: 30N120A
Contextual Info: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 V CES 1200 V 50 A 2.5 V ^C25 V CE sat typ S hort C ircuit SOA Capability Prelim inary Data Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES

14055B

Contextual Info: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

30n60b

Abstract: B2045
Contextual Info: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: DIXYS ADVANCED TECHNICAL INFORMATION High Speed IGBT with Diode IXSH 30 N60CD1 IXSK30N60CD1 IXST 30 N60CD1 V CES I Short Circuit SOA Capability 600 V 55 A C25 V C E sat 2.5 V t fi 70 ns TO-247AD (IXSH) Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C

ge motor 752

Contextual Info: v CES IXGH 24N60C IXGT 24N60C HiPerFAST IGBT Lightspeed™ Series ^C25 VCE sat typ t.t fity p 600 48 2.1 60 V A V ns Preliminary data sheet Maximum Ratings Symbol Test Conditions VCES V CGR T j = 25° C to 150° C 600 V T j = 25° C to 150° C; RGE = 1 m î î