MOSFET TETRODE Search Results
MOSFET TETRODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TCK401G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E |
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TCK425G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK423G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK420G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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TCK424G |
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MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G |
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MOSFET TETRODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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3N200 MOSFET
Abstract: 3N200
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Original |
3N200 3N200 com/3n200 3N200 MOSFET | |
3N141
Abstract: tetrode
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3N141 3N141 com/3n141 tetrode | |
3n159
Abstract: dual-gate
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Original |
3N159 3N159 com/3n159 dual-gate | |
3N211
Abstract: Depletion
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3N211 3N211 com/3n211 Depletion | |
transistors mosContextual Info: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics |
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3N212 3N212 com/3n212 transistors mos | |
p 1S marking SOT143Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 |
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BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W p 1S marking SOT143 | |
sot143 sot343Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 |
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BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W sot143 sot343 | |
E6327
Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
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BF2040. BF2040 OT143 BF2040R BF2040W OT343 E6327 DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143 | |
BF2040
Abstract: BF2040R BF2040W sot143 sot343
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BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040 BF2040R BF2040W sot143 sot343 | |
marking G2sContextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF1012S |
OCR Scan |
BF1012S BF1012S Q62702-F1627 OT-143 200MHz 200MHz marking G2s | |
BF2040
Abstract: BF2040R BF2040W 1V66
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BF2040. BF2040 OT143 BF2040R BF2040W OT343 Feb-25-2004 BF2040 BF2040R BF2040W 1V66 | |
BF2040WContextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 |
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BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040W | |
mosfet marking code ggContextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040 |
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BF2040. BF2040 BF2040R BF2040W OT143 OT143R OT343 BF2040, BF2040W mosfet marking code gg | |
BF1009
Abstract: 1009 Q62702-F1613
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Q62702-F1613 OT-143 Jul-29-1996 BF1009 1009 Q62702-F1613 | |
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marking code g1s
Abstract: marking g1s marking G2s
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OCR Scan |
Q62702-F1774 OT-343 marking code g1s marking g1s marking G2s | |
SOT 343 MARKING BF
Abstract: 2SM10 marking code g1s
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OCR Scan |
Q62702-F1776 OT-343 SOT 343 MARKING BF 2SM10 marking code g1s | |
Q62702-F1628Contextual Info: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code |
Original |
1009S Q62702-F1628 OT-143 Jul-29-1996 Q62702-F1628 | |
Q62702-F1487
Abstract: BF1012
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Q62702-F1487 OT-143 Jul-29-1996 Q62702-F1487 BF1012 | |
Contextual Info: SIEMENS BF 2030W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code |
OCR Scan |
62702-F1774 T-343 | |
Contextual Info: SIEMENS BF1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! BF 1012S |
OCR Scan |
BF1012S Q62702-F1627 1012S T-143 200MHz | |
bf998
Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
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BF998. BF998 BF998R OT143 OT143R BF998, application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note | |
Q62702-F1628
Abstract: marking code g1s
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1009S 1009S Q62702-F1628 OT-143 200MHz Q62702-F1628 marking code g1s | |
bf998
Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
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BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R | |
Q62702-F1498Contextual Info: BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code |
Original |
Q62702-F1498 OT-143 Jul-29-1996 Q62702-F1498 |