SIR826ADP Search Results

Contextual Info: New Product SiR826ADP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0055 at VGS = 10 V 60 80 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) 25 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm

Contextual Info: SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) Max. ID (A) a 0.0055 at VGS = 10 V 60 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) D 5 D 6 • 100 % Rg and UIS tested • Material categorization:

Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix SiR826ADP vs. SiR826DP Description: N-Channel, 80 V D-S MOSFET Package: PowerPAK SO-8 Pin Out: Identical Part Number Replacements: SiR826ADP-T1-GE3 replaces SiR826DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) Max. ID (A) a 0.0055 at VGS = 10 V 60 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) D 5 D 6 • 100 % Rg and UIS tested • Material categorization:

Contextual Info: New Product SiR826ADP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0055 at VGS = 10 V 60 80 0.0059 at VGS = 7.5 V 60 0.0087 at VGS = 4.5 V 60 Qg (Typ.) 25 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm

Contextual Info: SPICE Device Model SiR826ADP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

IDTP9036A

Abstract: OM350
Contextual Info: 12V Wireless Power Transmitter IC for TX-A6 Product Datasheet IDTP9036A Features Description 5W Solution for Wireless Power Consortium WPC -Compliant Power Transmitter Design TX-A6 Conforms to WPC Specification Version 1.1 Specifications Reduced EMI To Meet Requirements of WPC

so8 footprint

Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit

Contextual Info: Exclusive Technology Feature ISSUE: October 2014 How2 Turn On A MOSFET by Sanjay Havanur, Vishay Siliconix, Santa Clara, Calif. On a portal dedicated to power electronics professionals the topic of turning on a MOSFET might sound trivial, like asking how to boil water on a cooking show. After all, it shouldn't be a major issue. Unlike bipolar devices,

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in