sir878
Abstract: SIR878ADP vishay siliconix 1999
Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21
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SiR878ADP
2002/95/EC
SiR878ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sir878
vishay siliconix 1999
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Untitled
Abstract: No abstract text available
Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR878ADP
2002/95/EC
SiR878ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR878ADP
2002/95/EC
SiR878ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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PDF
|
SiR878ADP
2002/95/EC
SiR878ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21
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Original
|
PDF
|
SiR878ADP
2002/95/EC
SiR878ADP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiR878ADP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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SiR878ADP
AN609,
4755m
1762m
0790m
7262m
9255m
5154m
0747m
2323u
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SIR878ADP
Abstract: sir878
Text: SPICE Device Model SiR878ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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SiR878ADP
11-Mar-11
sir878
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Untitled
Abstract: No abstract text available
Text: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR878ADP
2002/95/EC
SiR878ADP-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR878ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiR878ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit
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SC-70
SC-75
Si7252DP
VMN-PT0261-1209
so8 footprint
SIR876
si7454
si409
SiR872ADP
sir878
SiS890DN
si7252
si419
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit
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PDF
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SC-75
SiB456DK
Si7252DP
SiS990DN
Si4590DY
1212-8S
VMN-PT0261-1402
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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N-Channel MOSFETs
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in
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SC-70
SC-75
1212-8S
VMN-MS6926-1406
N-Channel MOSFETs
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