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    TO-92 NPN DARLINGTON Search Results

    TO-92 NPN DARLINGTON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    2SC5200
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation

    TO-92 NPN DARLINGTON Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5769

    Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
    Contextual Info: Discrete POWER & Signal Technologies NPN Saturated Switches Device No. Case Style 2N5769 TO-92 92 PN2369 PN2369A PN4275 PN5134 TN3725A VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min 40 TO-92 (92) 40 TO-92 (92) 40 TO-92 (92) 40* TO-92 (92) 20* TO-226 (99)


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    2N5769 PN2369 PN2369A PN4275 PN5134 TN3725A O-226 D44C8 O-220 D44H1 2N5769 MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a PDF

    Contextual Info: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at


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    MPS-A13 PDF

    "Die No."

    Contextual Info: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 60 V (min) at


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    MPS-A28 MPS-A29 "Die No." PDF

    Small Signal Amplifiers

    Abstract: Darlington pair
    Contextual Info: Transistors USA / European specification models types [Leaded type] FTO-92 / NPN type General purpose small signal amplifiers General purpose amplification and switching Medium power amplification Darlington pair type 88 TO-92 package


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    FTO-92 Small Signal Amplifiers Darlington pair PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA13 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistors 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


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    MPSA13 100mA 100mA 100MHz PDF

    transistor a13

    Abstract: MARKING WL MPSA13 MPSA14
    Contextual Info: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,


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    MPSA13 MPSA14 MIL-STD-202, MPSA14 100mA, 100mA 100MHz transistor a13 MARKING WL PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA29 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


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    MPSA29 100mA 100mA 100MHz PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA14 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistors 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


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    MPSA14 100mA 100mA 100MHz PDF

    MPSA13

    Abstract: MPSA14 darlington transistor NPN
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA13, 14 Darlington TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE 0.625 PCM: W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage


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    MPSA13, MPSA14 MPSA13 100mA 100mA, 100MHz MPSA13 MPSA14 darlington transistor NPN PDF

    Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,


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    MPSA13 MPSA14 IL-STD-202, 100mA, 100mA 100MHz 300ns, DS11111 PDF

    MPSA14

    Abstract: MPSA13
    Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram


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    MPSA13 MPSA14 MIL-STD-202, MPSA14 100nA, 100mA, 100MHz PDF

    mpsa14

    Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic


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    MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz DS11111 mpsa14 PDF

    Darlington pair

    Abstract: darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor
    Contextual Info: Transistors USA / European specification models types [Leaded type] FTO-92 / NPN type General purpose small signal amplifiers General purpose amplification and switching Medium power amplification Darlington pair type 88 TO-92 package Transistors USA / European specification models types


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    FTO-92 Darlington pair darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor PDF

    MPSA13

    Abstract: MPSA14 MMBTA14 MMBTA13
    Contextual Info: MPSA13 and MPSA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector TO-226AA (TO-92) Base 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for


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    MPSA13 MPSA14 O-226AA OT-23 MMBTA13 MMBTA14 20K/box MPSA13 MPSA14 MMBTA14 MMBTA13 PDF

    BC337-25 PNP transistor download datasheet

    Abstract: TRANSISTOR BC337-25 PNP 2N3906 Darlington transistor TRANSISTOR BC327-40 BC546B SOT23 transistor transistor bc548b BC338-40 BC556A NPN Transistor BC548B TRANSISTOR BC337-25
    Contextual Info: Small-Signal Bipolar Transistors Package Thru-hole TO-92 VCEO 4 (Volt) 20 NPN TO-92 PNP Surface Mount SOT-23 SOT-23 NPN GS9012 500 64 202 2N4126 200 120 360 1V / 2mA 500 100 250 1V / 100mA BC818-25 BC808-25 500 160 400 1V / 100mA BC818-40 BC808-40 500 250


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    OT-23 GS9013 GS9012 2N4124 2N4126 100mA BC818-16 BC808-16 BC818-25 BC337-25 PNP transistor download datasheet TRANSISTOR BC337-25 PNP 2N3906 Darlington transistor TRANSISTOR BC327-40 BC546B SOT23 transistor transistor bc548b BC338-40 BC556A NPN Transistor BC548B TRANSISTOR BC337-25 PDF

    Transistor MPSA13

    Abstract: mpsa14
    Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,


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    MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz 300ms, DS11111 Transistor MPSA13 mpsa14 PDF

    MFW SOT23

    Abstract: mfw transistor mfw 14 2SC1740 transistor mfw sot-23 sot23 mfw transistor 2sc1740
    Contextual Info: Transistors • T ra nsisto rs. 50 I Digital Transistors Includes R esistors . 71 • NPN Transistors (TO-92). 50


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    O-92S) O-92L, O-126, O-126FP 2SC1740 MFW SOT23 mfw transistor mfw 14 2SC1740 transistor mfw sot-23 sot23 mfw transistor 2sc1740 PDF

    100ria

    Abstract: 25V6K RN5305 2N4494
    Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494 PDF

    MPSA14

    Abstract: MPSA13 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington
    Contextual Info: MPSA13 and MPSA14 ct u d ro P New Darlington Transistors NPN Collector Base TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for switching and amplifier applications. • High collector current


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    MPSA13 MPSA14 O-226AA OT-23 MMBTA13 MMBTA14 MPSA13 MPSA14 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington PDF

    Contextual Info: BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted


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    BSR50 PDF

    BCX38B

    Abstract: 10D3
    Contextual Info: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-24 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3


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    BCX38B UL94V-0 BCX38B 10D3 PDF

    Contextual Info: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-25 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3


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    BCX38B BCX38B UL94V-0 PDF

    Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE (V) (V) (V) W e v CE lC hFE VC BO v CEO v EBO •CBO » VCB0 (V) (V) (mA) VCE(S/IlT ) 0 i C Cob (V) (mA) »T NF •off <PF) (MHz) (dB) *c * MPSA25 NPN DARLINGTON EBC MIN 40


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    MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 PN3640 PN3639 PN3569 PN3638A PDF

    transistor D 13001

    Abstract: transistor x 13001 transistor s 13001 eb 13001 transistor bc617
    Contextual Info: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 00E75fifl 31D b'lE » APX 13001/ BC618 NPN D A R LIN G TO N TRANSISTOR NPN small-signal Darlington transistors, each in a plastic TO-92 envelope. They can be used for general purpose low frequency applications and as relay drivers etc.


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    00E75fifl BC618 BC617 transistor D 13001 transistor x 13001 transistor s 13001 eb 13001 transistor bc617 PDF