TO-92 NPN DARLINGTON Search Results
TO-92 NPN DARLINGTON Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TTC022 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini |
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TTC020 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TPCP8513 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 |
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2SC5200 |
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NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L) |
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TO-92 NPN DARLINGTON Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2N5769
Abstract: MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a
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2N5769 PN2369 PN2369A PN4275 PN5134 TN3725A O-226 D44C8 O-220 D44H1 2N5769 MPS805 pN2369 national 2N3704 TN67 2n5306 2N4124 NPN 2N3391A 2N5210 national tn3725a | |
Contextual Info: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at |
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MPS-A13 | |
"Die No."Contextual Info: Die no. D-69 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package; for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 60 V (min) at |
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MPS-A28 MPS-A29 "Die No." | |
Small Signal Amplifiers
Abstract: Darlington pair
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FTO-92 Small Signal Amplifiers Darlington pair | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA13 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistors 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value |
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MPSA13 100mA 100mA 100MHz | |
transistor a13
Abstract: MARKING WL MPSA13 MPSA14
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MPSA13 MPSA14 MIL-STD-202, MPSA14 100mA, 100mA 100MHz transistor a13 MARKING WL | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA29 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistor 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value |
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MPSA29 100mA 100mA 100MHz | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA14 TRANSISTOR NPN 1.EMITTER FEATURES z Darlington Transistors 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value |
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MPSA14 100mA 100mA 100MHz | |
MPSA13
Abstract: MPSA14 darlington transistor NPN
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MPSA13, MPSA14 MPSA13 100mA 100mA, 100MHz MPSA13 MPSA14 darlington transistor NPN | |
Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202, |
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MPSA13 MPSA14 IL-STD-202, 100mA, 100mA 100MHz 300ns, DS11111 | |
MPSA14
Abstract: MPSA13
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MPSA13 MPSA14 MIL-STD-202, MPSA14 100nA, 100mA, 100MHz | |
mpsa14Contextual Info: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic |
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MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz DS11111 mpsa14 | |
Darlington pair
Abstract: darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor
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FTO-92 Darlington pair darlington pair transistor amplifier TO92 package darlington Small Signal Amplifiers npn darlington darlington amplifiers Darlington npn darlington power transistor | |
MPSA13
Abstract: MPSA14 MMBTA14 MMBTA13
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MPSA13 MPSA14 O-226AA OT-23 MMBTA13 MMBTA14 20K/box MPSA13 MPSA14 MMBTA14 MMBTA13 | |
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BC337-25 PNP transistor download datasheet
Abstract: TRANSISTOR BC337-25 PNP 2N3906 Darlington transistor TRANSISTOR BC327-40 BC546B SOT23 transistor transistor bc548b BC338-40 BC556A NPN Transistor BC548B TRANSISTOR BC337-25
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OT-23 GS9013 GS9012 2N4124 2N4126 100mA BC818-16 BC808-16 BC818-25 BC337-25 PNP transistor download datasheet TRANSISTOR BC337-25 PNP 2N3906 Darlington transistor TRANSISTOR BC327-40 BC546B SOT23 transistor transistor bc548b BC338-40 BC556A NPN Transistor BC548B TRANSISTOR BC337-25 | |
Transistor MPSA13
Abstract: mpsa14
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MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz 300ms, DS11111 Transistor MPSA13 mpsa14 | |
MFW SOT23
Abstract: mfw transistor mfw 14 2SC1740 transistor mfw sot-23 sot23 mfw transistor 2sc1740
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O-92S) O-92L, O-126, O-126FP 2SC1740 MFW SOT23 mfw transistor mfw 14 2SC1740 transistor mfw sot-23 sot23 mfw transistor 2sc1740 | |
100ria
Abstract: 25V6K RN5305 2N4494
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2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494 | |
MPSA14
Abstract: MPSA13 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington
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MPSA13 MPSA14 O-226AA OT-23 MMBTA13 MMBTA14 MPSA13 MPSA14 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington | |
Contextual Info: BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted |
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BSR50 | |
BCX38B
Abstract: 10D3
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BCX38B UL94V-0 BCX38B 10D3 | |
Contextual Info: BCX38B BCX38B Si-Epitaxial Planar Darlington-Transistors Si-Epitaxial Planar Darlington-Transistoren NPN NPN Version 2006-07-25 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 |
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BCX38B BCX38B UL94V-0 | |
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE (V) (V) (V) W e v CE lC hFE VC BO v CEO v EBO •CBO » VCB0 (V) (V) (mA) VCE(S/IlT ) 0 i C Cob (V) (mA) »T NF •off <PF) (MHz) (dB) *c * MPSA25 NPN DARLINGTON EBC MIN 40 |
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MPSA25 MPSA26 MPSA27 MPSA28 MPSA29 PN3640 PN3639 PN3569 PN3638A | |
transistor D 13001
Abstract: transistor x 13001 transistor s 13001 eb 13001 transistor bc617
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00E75fifl BC618 BC617 transistor D 13001 transistor x 13001 transistor s 13001 eb 13001 transistor bc617 |