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    2N28 Price and Stock

    Nisshinbo Micro Devices RP112N281D-TR-FE

    IC REG LINEAR 2.8V 150MA SOT23-5
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    DigiKey RP112N281D-TR-FE Cut Tape 2,995 1
    • 1 $1.15
    • 10 $0.8
    • 100 $0.6168
    • 1000 $0.52067
    • 10000 $0.52067
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    RP112N281D-TR-FE Digi-Reel 2,995 1
    • 1 $1.15
    • 10 $0.8
    • 100 $0.6168
    • 1000 $0.52067
    • 10000 $0.52067
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    Central Semiconductor Corp 2N2857-PBFREE

    RF TRANS NPN 15V 1.9GHZ TO72
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    DigiKey 2N2857-PBFREE Bulk 2,472 1
    • 1 $5.54
    • 10 $3.924
    • 100 $5.54
    • 1000 $5.54
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    Portescap 22N28-216E.286

    STANDARD MOTOR 10000 RPM 6V
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    DigiKey 22N28-216E.286 Tray 148 1
    • 1 $64.99
    • 10 $64.99
    • 100 $59.6157
    • 1000 $59.6157
    • 10000 $59.6157
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    Portescap 22N28-213E.286

    STANDARD MOTOR 10000 RPM 9V
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    DigiKey 22N28-213E.286 Tray 76 1
    • 1 $36.92
    • 10 $34.75
    • 100 $34.75
    • 1000 $34.75
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    Portescap 22N28-210E.286

    STANDARD MOTOR 10000 RPM 12V
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    DigiKey 22N28-210E.286 Tray 60 1
    • 1 $41.39
    • 10 $39.4
    • 100 $39.4
    • 1000 $39.4
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    Find more 2N28 price and stock on Findchips.com

    2N28 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N28 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N28 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N28 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N28 Unknown GE Transistor Specifications Scan PDF
    2N28 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N28 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N280 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N280 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N280 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N280 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N280 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N280 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N280 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N280 Unknown Vintage Transistor Datasheets Scan PDF
    2N2800 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=PNP / Pkg=TO39 / Vceo=35 / Ic=0.8 / Hfe=20min / fT(Hz)=120M / Pwr(W)=0.8 Original PDF
    2N2800 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=35 / Ic=0.8 / Hfe=20min / fT(Hz)=120M / Pwr(W)=0.8 Original PDF
    2N2800 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2800 Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N2800 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2800 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    ...

    2N28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n2857 UHF transistor common base amplifier

    Abstract: 2N2857
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 •


    Original     		PDF 2N2857 To-72 2N2857 2n2857 UHF transistor common base amplifier

    2n2857 UHF transistor common base amplifier

    Abstract: 2n2857 2n2857 common base amplifier 2n2857 data sheet
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •


    Original     		PDF 2N2857 To-72 2N2857 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier 2n2857 data sheet

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    2N2857 semicoa

    Abstract: No abstract text available
    Text: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J


    Original     		PDF 2N2857 MIL-PRF-19500 2N2857J) 2N2857JX) 2N2857JV) 2N2857JS) MIL-STD-750 MIL-PRF-19500/343 2N2857 semicoa

    2N2857DCSM

    Abstract: No abstract text available
    Text: 2N2857DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


    Original     		PDF 2N2857DCSM MO-041BB) 2-Aug-02 2N2857DCSM

    2N2800

    Abstract: 120M
    Text: 2N2800 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 35V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2800 O205AD) 10/10m 1-Aug-02 2N2800 120M

    2N2891SMD05

    Abstract: No abstract text available
    Text: 2N2891SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


    Original     		PDF 2N2891SMD05 O276AA) 15-Aug-02 2N2891SMD05

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


    Original     		PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664

    2N4041

    Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


    Original     		PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4041 2N4127 2N5016 2N5102 2N5108 2N5421

    2N3186

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


    Original     		PDF A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N3186

    2N2876

    Abstract: 2n3375 CE 65 M 2n3632 2N4132 TO-37 SPACE POWER ELECTRONICS
    Text: 8440355 SPACE SPACE POWER POWER 89C ELECTRONICS ELECTRONICS 7T RF P O W E R - 2 8 VOLT D 7~-33-o/ 00119 DE~|fi44D3SS D D D D i n • 424 "7437 • ASN <«14 .437 • 046 • 356 7T50" • 375 7455 • 1658 Rated Breakdown Voltages TYPE CASE 2N2876 2N3632


    Original     		PDF -33-o/ fi44D3SS 2N2876 2N3632 2N3375 2N4132 CE 65 M TO-37 SPACE POWER ELECTRONICS

    SRK-2001

    Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


    Original     		PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 SRK-2001 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 solitron transistors 2N5016

    to63

    Abstract: No abstract text available
    Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


    Original     		PDF B440355 S4H03SS D00D11E 2N3265 2N3266 2N3597 2N3598 2N3599 2N3846 2N3847 to63

    2N2880-220M

    Abstract: UA80
    Text: 2N2880-220M MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 FEATURES 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 NPN POWER SILICON TRANSISTOR FOR HI–REL APPLICATIONS • HERMETICALLY SEALED TO–220 METAL PACKAGE 1 2 3 • ALL LEADS ISOLATED FROM CASE


    Original     		PDF 2N2880-220M O-257AB) 100mA 10MHz 2N2880-220M UA80

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan     		PDF O-111 O-5/39 O-114 2N5415

    2N2844

    Abstract: 2N2843
    Text: MOTORCLA SC XSTRS/R F 12E D | b3b755M OOflbbOS 1 | 2N2843 2N2844 CASE 22-03, STYLE 12 TO-18 TO-206AA 3 Drain (Case) MAXIMUM RATINGS Sym bol V a lu s U n it Drain-Source V olta g e Rating VDS 30 V dc Drain-Gate V oltage Vd g 30 V dc Gate-Source V olta g e


    OCR Scan     		PDF b3b755M 2N2843 2N2844 O-206AA)

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10


    OCR Scan     		PDF 2N91B 2N2857 2N3600 2N3839 2N5031 2N5032 2N5179 2N5842 2N6304 2N6305

    m 60 n 03 g10

    Abstract: No abstract text available
    Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60


    OCR Scan     		PDF 7057fl 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 m 60 n 03 g10

    2N3016

    Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
    Text: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60


    OCR Scan     		PDF 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1 2N2877 O-111 2N3016 13421

    TO111

    Abstract: 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265 PG2266 PG2267
    Text: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256


    OCR Scan     		PDF 2N2877 PG2265 2N2878 PG2266 2N2879 PG2267 2N2880 PG2268 2N3998 PG2252 TO111 2N3999 PG2265 PG2266 PG2267

    Untitled

    Abstract: No abstract text available
    Text: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A


    OCR Scan     		PDF 2N869 2N995 2N2696 BCY79-9 BCY79-10 BFX37 CF103

    2N5057

    Abstract: JAN2N706A 2n5456
    Text: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A


    OCR Scan     		PDF 2N834 2N709 FT709 2N3010 2N709A 2N2475 2N3647 2N3510 2N3011 2N743 2N5057 JAN2N706A 2n5456

    2n3547

    Abstract: 2N3549
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton


    OCR Scan     		PDF 2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 2n3547 2N3549

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


    OCR Scan     		PDF 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017