2SK879 Search Results

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

condenser microphone

Abstract: 2SK879
Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K R 7 Q GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0.1 1.25 + 0.1 • • High Breakdown Voltage : Vq/d s = —50V TTicrVi T n m i t T mr>pr l»nr»p

2SK879

Abstract: UFF 100 04
Contextual Info: TO SH IB A 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS 2.1 ± 0.1 J • High Breakdown Voltage : V jj g= —50V • High Input Impedance

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK879

Abstract: a63m
Contextual Info: TO SH IBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 2.1 ±0.1 1.25 ± 0.1 • • • High Breakdown Voltage : V q d § = —50V High Input Impedance : lQ gg= —l.OnA Max. (VQg= —30V)

2SK879

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK87

Contextual Info: SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm G E N E R A L PURPOSE AND IM PEDANCE CONVERTER 2 . 1+ 0.1 AND CONDEN SER MICROPHONE A P P L I C A T I O N S . 1.2 5±0.1 • High Breakdown Voltage: • High Input Impedance: s VGDS 50V IG gg=-1.0nA Max.

2SK879

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK879

Abstract: NA IJ5
Contextual Info: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0 .1 1.25 ± 0.1 • High Breakdown Voltage : V q d § = —50V • High Input Impedance

Contextual Info: TO SHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS 2.1 ± 0.1 J .25 ±0.1 • High Breakdown Voltage : V q d § = —50V • High Input Impedance

2SK879

Contextual Info: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK879

Contextual Info: 2SK879 東芝電界効果トランジスタ シリコンNチャネル接合形 2SK879 ○ 一般汎用 ○ インピーダンス変換用 ○ コンデンサマイク用 単位: mm • 小型パッケージでコンデンサマイク用に適しています。

2SK816

Abstract: 2sk895 2SK872 2SK875 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900
Contextual Info: - 74 - € m. % tt m « 'M m & ft ^ £ P d /P c h * K V E # * (V) £ * (A) % S fë fr * (W) Igss (max) (A) Vg s (V) ft ft (min) (max) Vps (A) (A) (V) i± (min) (max) Vd s (V) (V) (V) (Ta=Z5cC) (min) (typ) Vd s (S) (S) (V) ÏD (A) Id (A) 2SK872 NEC sw MOS

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC1815 2SA1015

Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
Contextual Info: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

3SK275

Abstract: 2sk882 transistor TT fet C439-4 FR90
Contextual Info: Surface Mount Device 2 Ultra Super-Mini Transistors (USM) - F5/F6 Electrical Characteristics (Ta=25°C) Type No. Application VcEO (V) Ic (mA) Pc (mW) Tj (°C) Mark Comple­ mentary Similar TO-92 Remarks (Super-Mini) 2SA1586 Low-frequency amplification