2SK373 Search Results

Contextual Info: Transistors IC SMD Type Product specification 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 2 .5 4 -0+ 0.2.2

2SK3737

Abstract: 71505 8390-3 MARKING KA
Contextual Info: 2SK3737 Ordering number : ENN8390 2SK3737 N-Channel Silicon MOSFET FM Tuner, VHF Amplifier Applications Features • • • Low noise. High power gain. Small reverse transfer capacitance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol

K373

Abstract: k3731
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3

2SK3738

Abstract: ITR00837 ITR00838 ITR00839 ITR00840 ENN7671
Contextual Info: Ordering number : ENN7671 2SK3738 N-Channel Junction Silicon FET 2SK3738 Impedance Converter Applications Application • • Package Dimensions Impedance conversion. Infrared sensor. unit : mm 2124 [2SK3738] Features • Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be

Contextual Info: TOSHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON N CHANNEL JUNCTION TYPE <; k 3 7 3 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT Unit in mm CURRENT APPLICATIONS • 5.1 M AX. High Breakdown Voltage : V q d s = _ 100V Min. • T n c i o = _ 1 On A Í M

2SK373

Contextual Info: TOSHIBA 2SK373 TO SH IBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK373 Unit in mm FOR A U D IO , HIGH VOLTAGE AMPLIFIER A N D CONSTANT CURRENT APPLICATIONS • • 5.1 M A X . High Breakdown Voltage : VGDS= —100V Min. High Input Impedance : lQ gg= —l.OnA (Max.) (VQ.g= —80V)

k3731

Abstract: k373 2sk3731
Contextual Info: Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 1.4 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 • For PDP • For high-speed switching 0.6±0.1 10.1±0.3 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3 0 to 0.3 ■ Absolute Maximum Ratings TC = 25°C

2SK373

Contextual Info: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

Contextual Info: TO SHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 Unit in mm FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT CURRENT APPLICATIONS • • 5.1 M AX. High Breakdown Voltage : VGDS= —100V Min. High Input Impedance : lGSS~ —1-OnA (Max.) (V(jg= —80V)

2SK373

Contextual Info: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min • High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

2SK373

Contextual Info: T O S H IB A 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT U nit in mm CURRENT APPLICATIONS • 5.1 M AX. High Breakdown Voltage : V G D S= —100V M in. • 0.45 High Input Impedance : lQ g g = —l.OnA (Max.) (VQ.g= —80V)

2SK373

Contextual Info: 2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Applications • High breakdown voltage: VGDS = −100 V min · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)

SMD Transistors nc

Abstract: 2SK3731 V782
Contextual Info: Transistors IC SMD Type N-channel enhancement mode MOSFET 2SK3731 TO-263 1 .2 7 -0+ 0.1.1 Unit: mm Features Low on-resistance, low Qg +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1

2SK3737

Abstract: D1306 8390-3 IT09918
Contextual Info: 2SK3737 注文コード No. N 8 3 9 0 三洋半導体データシート N 2SK3737 N チャネル MOS 型シリコン電界効果トランジスタ FM チューナ , VHF 帯増幅用 特長 ・低雑音である。 ・電力利得が大きい。 ・帰還容量が小さい。

vgds 100v

Abstract: 2SK373
Contextual Info: TOSHIBA 2SK373 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK373 FOR AUDIO, HIGH VOLTAGE AM PLIFIER AND CONSTANT Unit in mm CURRENT APPLICATIONS • . 5.1 M AX. High Breakdown Voltage : VGDS“ —100V Min. • 0.45 High Input Impedance : I@gg= —l.OnA (Max.) (V (jg= —80V)

K3731

Abstract: K373 2SK3731 2SK373
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm • Low on-resistance, low Qg • High avalanche resistance 4.6±0.2 1.4±0.1 1.4±0.1 2.5±0.2 0.8±0.1 2.54±0.3

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

7027a

Abstract: 2SK3738
Contextual Info: 2SK3738 Ordering number : EN7671A SANYO Semiconductors DATA SHEET 2SK3738 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance conversion Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slim

2SK3736

Abstract: PRSS0004AC-A
Contextual Info: 2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features • Capable of 2.5 V gate drive • Low drive current • Low on-resistance Outline RENESAS Package code: PRSS0004AC-A Package name: TO-220AB D 1. Gate 2. Drain

k3731

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3731 N-channel enhancement mode MOSFET • Features Unit: mm 4.6±0.2 (1.4) 10.5±0.3 ■ Applications 3.0±0.5 0 to 0.5 M Di ain sc te on na tin nc ue e/ d • For PDP • For high-speed switching

2SK241 Equivalent FET

Abstract: 2SK117 equivalent 200 Amp mosfet k 2545 MOSFET 3sk fet 2SK192A equivalent 2SK241 equivalent tv ic equivalent 2SK161 equivalent gaas fet vhf uhf
Contextual Info: Super-Mini FET SOT-23MOD, SOT-143MOD F5/F6 Electrical Characteristics (Ta=25“C) Mark Equivalent other package Type No. 1.2MIN J 2SK30ATM 15TYP X 2SK117 7TYP Y 2SK192A 1.0-10 9TYP K 2SK161 1.5-14 10TYP T 2SK241 0.6-6.5 1.5MIN KA 2SK373 Application V d s x V ooo

2SK3738

Contextual Info: Ordering number : EN7671A 2SK3738 N-Channel JFET http://onsemi.com 40V, 50 to 130 A, 0.13mS, SMCP Applications • • Impedance conversion Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting applied sets to be small and slim

2SK3738

Abstract: D1306 ITR00837 ITR00838 ITR00839 ITR00840
Contextual Info: 注文コード No. N 7 6 7 1 2SK3738 三洋半導体データシート N 2SK3738 用途 N チャネル接合形シリコン電界効果トランジスタ インピーダンス変換用 ・インピーダンス変換用。 ・赤外線センサー用。 特長

2SK3738

Contextual Info: Ordering number : ENN7671 2SK3738 2SK3738 N-Channel Junction Silicon FET Impedance Converter Applications Application • • Package Dimensions Impedance conversion. Infrared sensor. unit : mm 2124 [2SK3738] Features • Small IGSS. Small Ciss. Ultrasmall package permitting applied sets to be