MTP2N35
Abstract: 1RF710
Text: ., One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V Power And Discrete Division Description These devices are n-channel, enhancement mode, power
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IRF710-713
MTP2N35/2N40
O-220AB
IRF710
IRF711
IRF712
IRF713
MTP2N35
MTP2N40
TR-58
MTP2N35
1RF710
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sgsp531
Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92
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VN0640N2
TX106
IRF712
VN0340N2
MTD1N40
MTD1N40-1
RFP1N40
IRFF312
IRFF312
sgsp531
2sk76
irf33
unitrode
VN0340N5
sfn02806
stm231
stm331
650P
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IRF9634
Abstract: MJE13001 KT538A KT8296 KT829 KT940A kt8290 KT8270A MJE-13001 IRML2402
Text: DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part KT6136A KT6137A КТ607А-4 КТ607Б-4 КТ646А КТ646Б КТ646В KT660A KT660Б КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KT814A KT814Б KT814B KT814Г KT815A KT815Б KT815B KT815Г
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KT6136A
KT6137A
KT660A
KT660
KT814A
KT814
KT814B
KT815A
KT815
IRF9634
MJE13001
KT538A
KT8296
KT829
KT940A
kt8290
KT8270A
MJE-13001
IRML2402
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IRF710
Abstract: IRF711 100-C IRF712 IRF713
Text: Standard Power MOSFETs- IRF710, IRF711, IRF712, IRF713 File Number Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 1.3 A and 1.5 A, 350 V - 400 V fDsion = 3.6 O and 5 fi
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OCR Scan
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IRF710,
IRF711,
IRF712,
IRF713
92CS-35741
IRF713
75BVoss
IRF710
IRF711
100-C
IRF712
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irf630 irf640
Abstract: MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20 IRF710 IRF712 IRF720
Text: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — TO-220AB (continued) CASE 221A-02 (Ohms) Max (Amp) 400 5 0.8 1 Device IRF712 1.3 20 2 50 1.5 20 MTP2N40 3.6 0.8 IRF710 3.3 1.5 MTP3N40 2.5 1.8 1.5 75 IRF722 2.5 40 IRF720 3 MTP4N40
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OCR Scan
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T0-220AB
21A-02
IRF712
MTP2N40
IRF710
MTP3N40
IRF722
IRF720
MTP4N40
IRF732
irf630 irf640
MTP8N18
MTP4N18
MTP4N20
MOTOROLA IRF630
MTP5n18
MTP8N20
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IRF710
Abstract: irf713
Text: W vys S IRF710, IRF711, IRF712, IRF713 S e m ico n d ucto r y 7 1.7A and 2.0A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1,7A and 2.0A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF710,
IRF711,
IRF712,
IRF713
IRF710
irf713
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IRF615
Abstract: No abstract text available
Text: FUNCTION GUIDE POWER MOSFETs TO-220 NCHANNEL Continued BVdss(V) ID(onXA) RDS(onXQ) Part Number 150.00 2.00 2.60 3.30 4.00 4.00 5.00 8.00 8.00 9.00 16.00 16.00 18.00 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 IRL611 IRF613 IRF611 IRL621 IRF623
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OCR Scan
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PDF
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O-220
IRL611
IRF613
IRF611
IRL621
IRF623
IRF621
IRL631
IRF633
IRF631
IRF615
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IRFBC20
Abstract: IRF9511 IRFBE32
Text: International I» i Rectifier HEXFET Power MOSFETs Plastic Insertale Package TO-220 N-Channel Part Number V os Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) •DM Pu'“ Drain Current (Amps)
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OCR Scan
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PDF
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O-220
IRF712
IRF710
IRF722
IRF720
IRF732
IRF730
IRF742
IRF740
IRF823
IRFBC20
IRF9511
IRFBE32
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1rf730
Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Text: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5
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OCR Scan
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PDF
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O-220
IRF712
T0-22QAB
IRF710
IRF722
IRF720
IRF732
IRF730
IRF742
IRF740
1rf730
IRF9513
IRF9521
irfbf30
IRFBG30
THOMSON DISTRIBUTOR 58e d
IRF9511
IRF9523
IRFBC30
IRFBE32
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1rf634
Abstract: IRFZ25 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
Text: IO R PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 5bE D 4 Ô SS 4S E O G I D S S S 3 TO-220 Package '- • N-CHANNEL Types Vos V fifl OU Po pulsed max Ü A A W 210 190 120 100 60 56 40 33 150 150 90 90 60 60 36 36 28.0 25.0 14.0
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PDF
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O-220
IRFZ44
IRFZ45
IRFZ34
IRFZ35
IRFZ24
IRFZ25
IRFZ14
IRFZ15
IRF541
1rf634
international rectifier 9509
9374
9313
irf635
IRF71Q
9327
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MTP4N20
Abstract: MTP8N18 MTP5N40 mtp8n20 mtp4n35 IRF612 MTH8P20 power mosfets to 204aa T0-204AE MTM2P50
Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 MTM2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5 MTM5P20
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PDF
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O-218
O-22QAB
MTM2P50
204AA
MTP2P50
220AB
MTM2P45
MTP2P45
MTP4N20
MTP8N18
MTP5N40
mtp8n20
mtp4n35
IRF612
MTH8P20
power mosfets to 204aa
T0-204AE
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STM820
Abstract: STM-430 STM-741 STM-820 STM422 stm360 STM322 STM3600 STM431 STM-841
Text: SEMICONDUCTOR TECHNOLOGY OSE T> SEMICONDUCTOR TECHNOLOGY, INC. fll3bM50 D00D231 1 T- 3^-01 3131 S.E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 HIGH VOLTAGE MOS POWER FIELD EFFECT TRANSISTORS (N-CHANNEL) STI Type
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OCR Scan
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PDF
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STM-321
IRF321
STM-322
IRF322
STM-323
IRF323
O-220
STM-830
IRF830
STM820
STM-430
STM-741
STM-820
STM422
stm360
STM322
STM3600
STM431
STM-841
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1rf730
Abstract: 1rf740 1RF840 1RF630 IRF810 1RF711 IRFI13 IRF643 IRF644 IRF711
Text: - 254 - f M tt £ ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) ft % Vi>s= Ta=25‘ C) I d (on) D s (o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Vg s = 0 Vg s * /CH Vd g * /CH min Vg s
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OCR Scan
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PDF
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1RF642
O-220AB
IRF643
IRF644
IRF833
IRF840
-220AB
1rf730
1rf740
1RF840
1RF630
IRF810
1RF711
IRFI13
IRF711
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1rf740
Abstract: 1RF642 1rf730 1RF640 1RFD110 1RF840 IRF643 IRF644 IRF711 IRF712
Text: - 254 - f M £ tt € ft X £ Vd s or Vd g Vg s fé <Ta=25cC Id Pd * /CH * /CH ÏI Ig s s V g s th) Id s s min 1D nA) (Ta=25‘C ) Id (on) D s(o n ) Vi>s= Vg s max ft g fs Ciss Coss Crss $1- B m % V g s =0 (max) *typ V g s (V) (0) *lyp (A) (nA) IRF642 IR
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OCR Scan
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PDF
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1RF642
O-220AB
IRF643
IRF644
IRF833
IRF840
-220AB
1rf740
1rf730
1RF640
1RFD110
1RF840
IRF711
IRF712
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1RF640
Abstract: 1rf630 IRF810 1RF633 1RF634 1RF522 1rf740 Rf644 IRF530 IRF533
Text: - £> tt £ * f m V Vd s or € * Vdg Hr V £ Vg s tS eg. (Ta=25*0) Id Pd loss I gss Vg s th) 14 ft lo(on) F Ds(on) Vd s = g fs Ciss Coss * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) *typ Id (*typ) (max) (*typ) (max) (max) (S) (A) (pF)
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OCR Scan
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PDF
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1RF522
O-220AB
RF523
IRF530
IRF722
IRF723
IRF730
O-220
IRF731
1RF640
1rf630
IRF810
1RF633
1RF634
1rf740
Rf644
IRF533
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1rf740
Abstract: 1RF840 1rf820 1RF634 1RF630 1rf730 IRF810 1RF645 IRF112 IRF645
Text: - 254 - f M £ tt ft X Vd s or € £ Vg s fé < T a = 2 5 cC Id Pd ÏI Ig s s Id s s th) ft Ta=25‘ C) Ds(on) Vi>s= I d (on) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1- B m % Vg s = 0
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OCR Scan
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PDF
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1RF642
O-220AB
IRF643
IRF644
IRF722
IRF723
IRF730
O-220
IRF731
1rf740
1RF840
1rf820
1RF634
1RF630
1rf730
IRF810
1RF645
IRF112
IRF645
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1rf740
Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
Text: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-
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OCR Scan
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PDF
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1RF642
O-220AB
IRF643
IRF644
IRF833
IRF840
-220AB
1rf740
1RF840
1rf730
IRF810
1RF640
1RFD110
IRF9613
irf9620
IRF9640
IRFI13
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IRF150 To220 package
Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Text: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232
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OCR Scan
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PDF
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Q0D01b3
IRF120
IRF122
IRF123
IRF130
IRF131
IRF132
IRF133
IRF140
IRF141
IRF150 To220 package
irf150 to220
IRFP240
xg32
ULTRA FAST RECOVERY RECTIFIERS to-220
irf64d
to-3p 1500V
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power 22D
Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
Text: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233
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OCR Scan
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PDF
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QDD01b3
IRF120
IRF122
IRF123
IRF130
IRF131
IRF132
IRF133
IRF140
IRF141
power 22D
irf64d
IRF740
IRFP240
IRFP450 bridge
IRF350
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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OCR Scan
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PDF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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IRF9120
Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143
Text: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)
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OCR Scan
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PDF
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1RF642
O-220AB
IRF643
IRF644
IRF833
IRF840
-220AB
IRF9120
1rf740
1rf730
IRF9223
1RF840
IRF9122
IRF9121
LM3661TL-1.25
IRF713
l 9143
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1rf730
Abstract: IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523 IRF843
Text: - * sy i± € A Vds or £ * Vd g % V £ Vg s is Id Pd m m (Ta=25"C) less VG S th) I dss Vds= ft i# 14 b(on) Ds(on) g fs Ciss Coss Crss (*typ) (*typ) (*typ) (V) (A) * /CH (nA) m Vg s (V) ( M A) Vd s (V) min ma x (V) (V) (max) Id (mA) (max) (max) (max) (pF)
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OCR Scan
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PDF
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1RF842
O-220AB
IRF843
T0-220AB
IRF9130
IRF833
IRF840
-220AB
1rf730
IRF9120
1rf9530
1RF640
1rf830
1RF840
IRF9512
IRF9141
IRF9523
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1RF640
Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
Text: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)
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OCR Scan
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PDF
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1RF522
O-220AB
RF523
IRF530
IRF630
IRF631
T0-220AB
1RF640
1rf740
irf810
1RF540
1RF840
IRFAE50
1RF630
IRF612
irf9620
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1RF630
Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Text: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)
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OCR Scan
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PDF
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Ta-2510)
SD210
TD-12
SD211
SD212
S0213
O-220AB
IRF630
IRF631
1RF630
irf810
1RF540
1RF530
1RF620
1rf740
ferranti
1RF634
RF543
IRF9613
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